SEMITRANS®4
IGBT Modules
SKM 500GA123D
SKM 500GA123DS
Features
! " #
$ % &
' #
( ) # *+
& "
,-* , * -
.
/0
01
Typical Applications*
+*
23
GA GA...S
Absolute Maximum Ratings .4 05 6* #
Symbol Conditions Values Units
IGBT
*7 .84 05 6* /011
&*.84 /51 6* . 4 05 6* 511 +
. 4 :1 6* ;01 +
&*< &*<40%&* :11 +
=7 > 01
** 4 $11 ? =7 @ 01 ?
*7 A /011
.84 /05 6* /1 B
Inverse Diode
&(.84 /51 6* . 4 05 6* 511 +
. 4 :1 6* C51 +
&(< &(<40%&( :11 +
&( 4 /1 ? D .84 /51 6* C$11 +
Module
&< 511 +
.8 ' ;1 DDDE /51 6*
. ' ;1 DDDE /05 6*
+* / D 0511
Characteristics .4 05 6* #
Symbol Conditions min. typ. max. Units
IGBT
=7 =7 4 *7 &*4 /$ + ;5 55 $5
&*7 =7 41*7 4 *7 .84 05 6* 1/ 1C +
*71 .84 05 6* /; /$
.84 /05 6* /$ /:
*7 =7 4 /5 .84 056* 0F5 C5 G
.84 /056* CF5 ;F5 G
*7 &* 4 ;11 + =7 4 /5 .84 6*D 05 C
* 0$ ;1 (
* *7 4 05 =7 4 1 # 4 / !H ; 50 (
* 0 0$ (
<= .84 6* /05 I
051 $11
<= 4 CC G ** 4 $11 /F1 C;1
7 &*4 ;11+ ;5 J
## <=## 4 CC G .84 /05 6* K11 //11
#=7 4 > /5 /11 /05
7## J
<8' &=-. 11;/ LMN
SKM 500GA123D
1 11-09-2006 RAA © by SEMIKRON
http://store.iiic.cc/
SEMITRANS®4
IGBT Modules
SKM 500GA123D
SKM 500GA123DS
Features
! " #
$ % &
' #
( ) # *+
& "
,-* , * -
.
/0
01
Typical Applications*
+*
23
GA GA...S
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
(4 7* &( 4 ;11 +? =7 4 1 .84 05 6*D 0 05
.84 /05 6*D /:
(1 .84 05 6* // /0
.84 /05 6*
(.84 05 6* 0C CC G
.84 /05 6* G
&<< &(4 ;11 + .84 05 6* K1 +
O M 4 0111 +MB /5 B*
7 =7 41?** 4 $11 J
<8', 11K LMN
Freewheeling Diode
(4 7* &( 4 +? =7 4 .84 6*D
(1 .84 05 6*
.84 /05 6*
(.84 05 6*
.84 /05 6*
&<< &(4 + .84 6* +
O B*
7 =7 41?** 4 $11 J
LMN
Module
*7 /5 01 !
<**PE77P D ' .4 05 6* 1/: G
.4 /05 6* 100 G
<' 11C: LMN
Q $ C 5
$ ; 05 // 5 0
CC1
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SKM 500GA123D
2 11-09-2006 RAA © by SEMIKRON
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SEMITRANS®4
IGBT Modules
SKM 500GA123D
SKM 500GA123DS
Features
! " #
$ % &
' #
( ) # *+
& "
,-* , * -
.
/0
01
Typical Applications*
+*
23
GA GA...S
Zth
Symbol Conditions Values Units
Zth(j-c)l
< 4 / 0K QMN
< 4 0 /1 QMN
< 4 C /: QMN
< 4 ; 10 QMN
4 / 11;
4 0 11/:K
4 C 111/F
4 ; 111/
Zth(j-c)D
< 4 / $1 QMN
< 4 0 0C QMN
< 4 C $0 QMN
< 4 ; 1: QMN
4 / 11C$$
4 0 11;0
4 C 1111K
4 ; 1110
SKM 500GA123D
3 11-09-2006 RAA © by SEMIKRON
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Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 500GA123D
4 11-09-2006 RAA © by SEMIKRON
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Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge
SKM 500GA123D
5 11-09-2006 RAA © by SEMIKRON
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UL Recognized File 63 532
* , $1
=+ * , $1
SKM 500GA123D
6 11-09-2006 RAA © by SEMIKRON
http://store.iiic.cc/
