OPTOELECTRONICS HERMETIC SILICON PHOTOTRANSISTOR h : wn Y ' L wr fl t SYMBOL INGHES MILLIMETERS NOTES MIN. | MAX. | MIN. | MAX. A 225 | .255 | 5.71 | 6.47 @b O16 | 021 | 407 [| 533 SD 209 | .230 | 531 | 5.84 wD, 178 | 195 | 4.52 | 4.96 @ 100 NOM 2.54 NOM 2 a 050 NOM 1.27 NOM 2 h = 030 = 76 j 036 | .046 92 | 1.16 k 028 | .048 fi | 1.22 1 L 500 = 12.7 _ a 45 45 45" 45 3 (COLLECTOR CONNECTED TO CASE) (3) 8(2) $T1607 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021" (.533mm) MEASURED IN GAUGING PLANE .054 + .001" .000 (137 + .025 .000mm)} BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO E(l) MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB. $T1333 L14P1/2 The L14P series is a silicon phototransister mounted ina narrow angle, TO-18 package. @ Hermetically sealed package Narrow reception angle m Devices can be used as a photodiode by wiring the collector and base leads.& HERMETIC SILICON OPTOELECTRONICS PHOTOTRANSISTOR Storage Temperature 2.0 ee et nnn eee 65C to +150C Operating Temperature 2... tte tenner te tener nes 65C to +125C Soldering: Lead Temperature (Iron) 2.0.00. nee ene e tenn nnes 240C for 5 sec.245 Lead Temperature (FIOW) 2.0.00... e nee 260C for 10 sec.** Collector-Emitter Breakdown Voltage .. 00... cc ee enn e nent n nnn 30 Volts Collector-Base Breakdown Voltage .... 0... ccc en nee n nett eee 40 Volts Emitter-Base Breakdown Voltage ......... 0.0 ccc eet rennet ett tenet neers 5 Volts Power Dissipation (Tx = 25C) 200.0. enn net e tee 300 mw Power Dissipation (Te = 25C)... ccc een ete eens 600 mw All measurements PARAMETER SYMBOL MIN. TYP. MAX. Collector-Emitter Breakdown BV ceo 30 _ Vv Ik = 10 MA, Ee = 0 Emitter-Base Breakdown BV ego 5.0 _ v I: = 100 nA, Ee = 0 Collector-Base Breakdown BV cso 40 _ Vv |. = 100 pA, Ee = 0 Collector-Emitter Leakage lego _ 100 nA Voc = 10V, Ee = 0 Collector-Base Leakage loso _ 25 nA Von = 25 V, Ee = 0 Reception Angle at 2 Sensitivity 8 +12 Degrees On-State Collector Current L14P1 levony 4.0 _ mA Ee = 0.3 mWicm?, Vz = 5 V7 On-State Collector Current L14P2 letony 8.0 mA Ee = 0.3 mW/cm, Vee = 5 V7" On-State Photodiode Current lestony 6.0 pA Ee = 0.3 mWicm, Veg = 5 V Rise Time t 10 bs Io = 10 MA, Veg = 5 V, Ry = 1000 Fall Time t 12 pS Io = 10 MA, Veo = SV, R, = 1000 Saturation Voltage L14P1 Veesan 0.40 Vv |, = 0.8 mA, Ee = .6 mW/em??*) Saturation Voltage L14P2 Voeisany 0.40 Vv I, = 1.6 mA, Ee = .6 mWicm?* _NOTES Derate power dissipation linearly 3.00mW/C above 25C ambient. Derate power dissipation linearly 6.00mW/C above 25C case. RMA flux is recommended. . Methanol or lsopropyl alcohols are recommended as cleaning agents. . Soldering iron tip ie (1.6 mm) minimum from housing. . As long as leads are not under any stress or spring tension. . Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. . Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 3.0 mW/crY is approximately equivalent to a tungsten source, at 2870K, of 10 mW/crr. ONOOAWHSeS HERMETIC SILICON OPTOELECTRONICS PHOTOTRANSISTOR IL NORMALIZED LIGHT CURRENT kb Zz Ww c a 5 x < a 9 ws 2 5 wo N a =< = a Q Zz 50 40 30 20 10 RELATIVE OUTPUT- PERCENT G-A DISPLA WAVE LENGTH NORMALIZED T Ee = 20mW/cm? Eo = ImW/em2 10 Vce- SV TA 28C PULSED th = 300psec IZED 7 ce = BV Eq = 1 mWfem2 Ta=26C PULSED to = 300psec I, NORMALIZED LIGHT CURRENT nN 1 Vog GOLLECTOR TO EMITTER VOLTAGE VOLTS sri102 E,~ TOTAL IRRADIANCE IN mW/cm? . . wae ST1107 Fig. 1. Light Current vs. Collector to Emitter Voltage Fig. 2. Light Current vs. Radiation NORMALIZED TQ Ta> 28C Voce = tov iL NORMALIZED LIGHT CURRENT Vee = 5V 02 Tas 25 7 Ga Ag SOURCE(1N6264), ty = 30000, Ty=T, 1 10 20 30 40 50 60 a 80 30 100 Ta- TEMPERATURE C Ta TEMPERATURE Co . 871103 . . ST1106 Fig. 3. Dark Current vs. Temperature Fig. 4. Light Current vs. Temperature Vee = Ne = 10 mA Ri = 10082 Ta= 25C -~40 - RELATIVE RESPONSE tr and tf NORMALIZED SWITCHING SPEEDS FROM OPTICAL AXIS NANOMETERS DEGREES Fig. 5. Angular and Spectral Response loge - OUTPUT CURRENT mA ST1104 RISE TIME FALL TIME Fig. 6. Switching Speed vs. Bias ST1105