Symbol Max p-channel Units
VDS V
VGS V
IDM
TJ, TSTG °C
Symbol Units
t ≤ 10s °C/W
Steady-State °C/W
Steady-State RθJL °C/W
Max
62.5
90
40
Maximum Junction-to-Lead C
Typ
48
74
35
PD
Junction and Storage Temperature Range
Parameter
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
TA=70°CPower Dissipation
TA=25°C
A
Continuous Drain
Current A
TA=25°C
ID
TA=70°C
Pulsed Drain Current B-2020
4.5
3.6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Max n-channel
-2.6
-3.2
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
W
2
1.28
2
1.28
±20
Drain-Source Voltage
±20Gate-Source Voltage
60 -60
AO4612
60V Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
VDS (V) = 60V -60V
ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)
RDS(ON) RDS(ON)
< 56mΩ (VGS=10V) < 105mΩ (VGS = -10V)
< 77mΩ (VGS=4.5V) < 135mΩ (VGS = -4.5V)
100% Rg tested
General Description
The AO4612 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2 G1
D1
S1
n-channel
p
-channel
SOIC-8
Top View Bottom View
Pin1
Alpha & Omega Semiconductor, Ltd.
AO4612
Symbol Min Typ Max Units
BV
DSS
60 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1 2.1 3 V
I
D(ON)
20 A
46 56
T
J
=125°C 79
64 77 mΩ
g
FS
11 S
V
SD
0.74 1 V
I
S
3 A
C
iss
450 540 pF
C
oss
60 pF
C
rss
25 pF
R
g
1.65 2 Ω
Q
g
(10V) 8.5 10.5 nC
Q
g
(4.5V) 4.3 5.5 nC
Q
gs
1.6 nC
Q
gd
2.2 nC
t
D(on)
4.7 7 ns
t
r
2.3 4.5 ns
Gate resistance
Output Capacitance
Input Capacitance
Diode Forward Voltage
V
GS
=10V, V
DS
=30V, R
L
=6.7Ω,
Ω
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
V
GS
=10V, V
DS
=5V
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=4.5A
Forward Transconductance
mΩ
V
GS
=4.5V, I
D
=3A
V
DS
=5V, I
D
=4.5A
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=4.5A
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
Zero Gate Voltage Drain Current
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
On state drain current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
N Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
V
DS
=48V, V
GS
=0V µA
Total Gate Charge
Alpha & Omega Semiconductor, Ltd.
t
D(off)
15.7 24 ns
t
f
1.9 4 ns
t
rr
27.5 35 ns
Q
rr
32 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
R
GEN
=3Ω
Body Diode Reverse Recovery Charge I
F
=4.5A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=4.5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and l ead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating. Rev3: Oct 2010
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
5
10
15
20
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
V
GS
=3.5V
4.0V
10V
5.0V
4.5V
0
5
10
15
2 2.5 3 3.5 4 4.5 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
20
30
40
50
60
70
80
90
100
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
0.8
1
1.2
1.4
1.6
1.8
2
0
100
125
150
175
Normalized On-Resistance
V
GS
=10V
VGS=4.5V
ID=3.0A
ID=4.5A
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
Alpha & Omega Semiconductor, Ltd.
0
5
10
15
20
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
V
GS
=3.5V
4.0V
10V
5.0V
4.5V
0
5
10
15
2 2.5 3 3.5 4 4.5 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
20
30
40
50
60
70
80
90
100
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125
°
C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=10V
VGS=4.5V
ID=3.0A
ID=4.5A
40
60
80
100
120
140
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
ID=4.5A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
2
4
6
8
10
0 10
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Coss
C
rss
0.0
0.1
1.0
10.0
100.0
0.1
1
100
ID(Amps)
10ms
1ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
RDS(ON)
VDS=30V
ID= 4.5A
TJ(Max)=150°C
TA=25°C
µ
s
Alpha & Omega Semiconductor, Ltd.
0
2
4
6
8
10
0 10
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss
C
rss
0.0
0.1
1.0
10.0
100.0
0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10ms
1ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
RDS(ON)
VDS=30V
ID= 4.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
µ
s
Alpha & Omega Semiconductor, Ltd.
AO4612
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
t
on
t
d(off)
tf
t
off
LBV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Alpha & Omega Semiconductor, Ltd.
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
t
on
t
d(off)
tf
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Alpha & Omega Semiconductor, Ltd.
AO4612
Symbol Min Typ Max Units
BV
DSS
-60 V
-1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-1 -2.1 -3 V
I
D(ON)
-20 A
84 105
T
J
=125°C 145
106 135 mΩ
g
FS
9 S
V
SD
-0.73 -1 V
I
S
-3 A
C
iss
930 1120 pF
C
oss
85 pF
C
rss
35 pF
R
g
7.2 9 Ω
Q
g
(10V) 16 20 nC
Q
g
(4.5V) 8 10 nC
Q
gs
2.5 nC
Q
gd
3.2 nC
t
D(on)
8
12
ns
Drain-Source Breakdown Voltage I
D
=-250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current V
DS
=-48V, V
GS
=0V
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=-250µA
On state drain current V
GS
=-10V, V
DS
=-5V
Gate-Body leakage current V
DS
=0V, V
GS
=±20V
Diode Forward Voltage I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Output Capacitance
mΩ
V
DS
=-5V, I
D
=-3.2A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-3.2A
V
GS
=-4.5V, I
D
=-2.8A
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance V
GS
=0V, V
DS
=-30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-30V, I
D
=-3.2A
Turn-On DelayTime
Alpha & Omega Semiconductor, Ltd.
t
D(on)
8
12
ns
t
r
3.8 7.5 ns
t
D(off)
31.5 48 ns
t
f
7.5 15 ns
t
rr
27 35 ns
Q
rr
32 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Charge I
F
=-3.2A, dI/dt=100A/µs
Turn-On DelayTime
V
GS
=-10V, V
DS
=-30V, R
L
=9.4Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=-3.2A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
5
10
15
20
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics
V
GS
=-3.0V
-3.5V
-4.5V
-10V
-4.0V
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics
70
80
90
100
110
120
130
RDS(ON) (mΩ
Ω
Ω
Ω)
0.8
1
1.2
1.4
1.6
1.8
2
0
100
125
150
175
Normalized On-Resistance
VGS=-10V
VGS=-4.5V
25°C
125°C
V
DS
=-5V
VGS=-4.5V
V
GS
=-10V
ID=-3.2A
ID=-2.8A
Alpha & Omega Semiconductor, Ltd.
0
5
10
15
20
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics
V
GS
=-3.0V
-3.5V
-4.5V
-10V
-4.0V
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics
70
80
90
100
110
120
130
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=-10V
VGS=-4.5V
60
80
100
120
140
160
180
200
2345678910
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V
DS
=-5V
VGS=-4.5V
V
GS
=-10V
ID=-3.2A
25°C
125°C
ID=-3.2A
ID=-2.8A
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
2
4
6
8
10
0 4 8 12 16 20
-VGS (Volts)
-Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0 10 20 30 40 50 60
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Power (W)
Coss C
rss
0.0
0.1
1.0
10.0
100.0
0.1
1
100
-ID(Amps)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=-30V
ID=-3.2A
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
0
2
4
6
8
10
0 4 8 12 16 20
-VGS (Volts)
-Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0 10 20 30 40 50 60
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss C
rss
0.0
0.1
1.0
10.0
100.0
0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=-30V
ID=-3.2A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
AO4612
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Alpha & Omega Semiconductor, Ltd.
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Alpha & Omega Semiconductor, Ltd.