\ SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS T0-98 PACKAGE Device 2N4256 2N4424 2N4425 2N5172 2N5174 2N5232 2N5232A 2N5249 2N5249A 2N5305 2N5306 2N5307 2N5308 2N5309 2N5310 2N5311 2N5354 2N5355 2N5356 2N5365 2N5366 2N5418 2N5419 2N5420 2N6076 Di6G6 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 D33D21 D33D22 033024 033025 D33D 26 D33D29 D33D30 bmn ; : BVcEO @10mA (Vv) 40 40 40 25 75 50 50 50 50 25 40 50 50 50 Nee Vce(sat) Min.-Max. @ Ic, Voge (V) |(V) Max. @ lo, Ip Toe ee 7 : 0.125 | 10mA, 1.0mA aa | 0.3 5OmA, 3mA as 0.3 50mA, 3mA | 0.25 | 10mA, 1mA : 0.95 10mA, 1.0mMA a 0.125 | 10mA, 1mA a 0.125 | 10mA, 1mA ; : 0.125 | 10mA, 1mA : : 0.125 | 10mA, 1mA . a i 1.4 }200mA, 0.2mA | 1.4 200mA, 0.2mA | 1.4 200mA, 0.2mA 1.4 200mA, 0.2mA : 0.125 | 10mA, 1mA i 0.125 10mA, 1mA IC 0.125 | 10mA, 1mA : 20 0.25 5OmA, 2.5mA : : 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA ] 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA | 0.25 50mA, 2.5mA : 0 0.25 10mA, 1.0mA : a 0.6 10mA, 1.0mA 0.75 |500mA, 50mA 0.75 |500mA, 50mA | 0.75 |500mA, 50mA C 0.75 |S00mA, 50mA | Bi : ' 0.75 |500mA, 50mA ' . 500mA, 50mA 0.75 |500mA, 50mA : ; 0.75 |500mA, 50mA i ) 0.75 |500mA, 50mA : 0.75 500mA, 50mA |] 0.75 |500mA, 50mA : 21 0.75 500mA, 50mA | : 0.75 |500mA, 50mA : - 0.75 |500mA, 50mA . 102 fr Cp @10V Typical (MHz) Py @ 25C (mW) 1 MHz Typical (Pf) gqaagqd NNN BeaBAEB NNNNN VN aad OprahSilicon Transistors This series of economy transistors are PNP, silicon, planar, epitaxial, passivated devices. These units feature low collector saturation voltage, good current gain linearity over a wide collector current range, high gain-bandwidth product, and low noise, These characteristics make these units excellent for use in general purpose consumer and industrial amplifier and switching applications. absolute maximum ratings: (25C) (unless otherwise specified) Voltages Collector to Emitter Vero 40 Volts Emitter to Base Vepo 4 Volts Collector to Base Vero 40 Volts _ 205 DIMENSIONS WITHIN 195, Current JEDEC OUTLINE To-98 el Collector (Continuous) Ic 300 mA me eng $n l | fe Collector (Pulsed, 10 usec pulse width, mat of C21 & belt i Hi == 2% Duty Cycle) Ic 700 mA TU sk Toxo Dissipation RereRONEE UMESS TOLERANED 00 1. ae Total Power (Free Air at 25C) * Pr 360 mW suas / pt Total Power (Free Air at 55C) * Pr 260 mW corr $208 C8) (NOTE 0) 4 Temperature }_ P Storage Tate 65 to +150 C Operating T, +125 C Lead temperature, 1/16 = 1/32 from case for ten seconds maximum Ti +260 C * Derate 3.6 mW/C increase in ambient temperature above 25C, electrical characteristics: (25C) (unless otherwise specified) Static Characteristics Min. Max. Collector Cutoff Current (Ves = 40V) Topo 100 nA (Von = 40V, Ta = 100C) Teno 10 pA (Ves = 40V) Tess 100 nA Emitter Cutoff Current (Vis =: 4V) Teno -10 pA Forward Current Transfer Ratio (Ver = 10V, Ic = 2 mA) 2N5365 hrs 32 (Vee = 1V, Ic = 50 mA) 2N5365 hra 40 120 (Vee = 5V, Ic = 300 mA) 2N5365 hre 20 (Vee = 10V, Ic = 2 mA) 2N5366 hre 80 (Vce = ~1V, Ic = -50 mA) 2N5366 hre 100 300 (Vee = 5V, Ic = 300 mA) 2N5366 hrs 40 (Vex = 10V, Ic = 2 mA) 2N5367 Dre 200 (Vcs = 1V, Ic = 50 mA) 2N5367 Tre 250 500 (Vee = 5V, Ic = 300 mA) 2N5367 bre 15 Collector Emitter Breakdown Voltage (Ic =10 mA) Var) cxo 40 Volts Collector Saturation Voltage (Ic = 50 mA, In = 2.5 mA) Vox can .250 Volts (Ic = 300 mA, In = 30 mA) Vee can 1.0 Volts Base Saturation Voltage (Ic = 50 mA, Ip = 2.5 mA) Var cat -1.1 Volts (Ic = 300 mA, Ip = 30 mA) Van can 2.0 Volts Base Emitter Voltage (Vee = 10V, Ic = 2 mA) Vex 0.5 0.8 Volts 498Dynamic Characteristics Forward Current Transfer Ratio (Vee = 10V, Ic = 2 mA, f = 1kHz) (Voce =: 10V, Ic == 2 mA, f = 1 kHz) (Ven = 10V, Ic = --2 mA, f = 1 kHz) Output Capacitance, Common Base (Vea = 10V, Is = 0, f = 1 MHz) input Capacitance, Common Base (Ves = 0.5V, Ic = 0, f = 1 MHz) Gain Bandwidth Product Voe~ COLLECTOR EMITTER VOLTAGE - VOLTS Voge COLLECTOR EMITTER VOLTAGE VOLTS (Vee = 10V, Ic = 2 mA) y oO 5B nN 3s o a n 2 -Ol =~ 7 TYPICAL CONTOURS 2N5365 10 Ig - COLLECTOR CURRENT -mA 2N5367 Lo ig ~ COLLECTOR CURRENT mA 2N5365 2N5366 2N5367 hte Hire hre Cen fr too oo Min. 32 80 200 2N5365, 6, 7 Typ. Max. 180 450 750 8 pF 35 pF 250 MHz OF GAIN BANDWIDTH PRODUCT, (f,) VS. COLLECTOR CURRENT 499 ny 3 a o n Veg COLLECTOR EMITTER VOLTAGE - VOLTS s nN 02 2N5366 ig - COLLECTOR CURRENT -mA TYPICAL NORMALIZED Hee VS. TEMPERATURE fe NORMALIZED TO SOmA, 25C VALUE 2N5365, 5366, 5367 Vogt S VOLTS I =SOmA 30 75 0 25 9 25 Tg - AMBIENT TEMPERATURE -*C2N5365, 6, 7 TYPICAL TRANSFER CHARACTERISTICS TYPICAL FORWARD CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT 2N5365 2N5365 HFE VS Ig Vog *5 VOLTS Veg -BASE EMITTER VOLTAGE - VOLTS pe -FORWARD CURRENT TRANSFER RATIO On 410 19 0 100 Tg COLLECTOR CURRENT ~ ma Le COLLECTOR CURRENT- ma. 2N5366 2N5366 VS Ie Voge = SVOLTS 1 The \ \ \ \ \ | \ \ N\ VBE BASE EMITTER VOLTAGE - VOLTS. aes : < | \. ! nw a * a \ \ hre - FORWARD CURRENT TRANSFER RATIO 7 ap ol r 0 10 100 o1 on 190 100 1000 Ig - COLLECTOR CURRENT -mA Tg ~ COLLECTOR CURRENT - mA 2N5367 2N5367 HFE VS Ice L = 5 VOLTS Nog * 541 jet oa Tas l00*e e 5 3 2 qa 3 a F Lo] S a "| . 3, 3 o F peertggs 25C r 5 am i 5 06 ~ g Let Vy a s 2 al Tas 00re, 3 1 e LA I 2 | | [4 5 Tt | & a4 os Z 10 0 0 1000 * , Ig - COLLECTOR CURRENT-mA Ig -COLLECTOR CURRENT - mA 500TYPICAL COLLECTOR SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N5365 2 & 4 * Veg (SAT) COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS S 8 Ig - COLLECTOR CURRENT- mA 2N5366 40 8 8 2 xu 8 8s 7100" Tartoore Tys25c Voge (SAT) COLLECTOR EMITTER SATURATION VOLTAGE -VOLTS: On Oz 4 06 08 WO z 4 6 6 20 40 60 BO WO 200 300 Ig COLLECTOR CURRENT- mA 2N5367 Veg(SAT) COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS. Ol Ig -COLLECTOR CURRENT -mA 501 2N5365, 6, 72N5365, 6,7 TYPICAL SMALL SIGNAL CHARACTERISTICS vs. EMITTER CURRENT 2N5365, 5366, 5367 Veg #10V Tat 25C fe rkHz 1 kHz HYBRID PARAMETERS NORMALIZED TO 2mA VALUE Te- EMITTER CURRENT - ma TYPICAL TYPICAL SMALL SIGNAL CHARACTERISTICS COLLECTOR CUTOFF CURRENT Vs. (Ico) VS. TEMPERATURE COLLECTOR VOLTAGE ON5365, 5366, 5367 1kHz HYBRID PARAMETERS NORMALIZED TO IOV VALUE 2N5365, 5366, 5367 loo = 3 > o s Teno - COLLECTOR BASE REVERSE CURRENT ~ NANOAMPERES ee 1152 3534 5 8 10 20.3040 50 gs 00 Veg ~ COLLEGTOR-EMITTER VOLTAGE -vOLTS tacAMBIENT TEMPERATURE=*e TYPICAL SMALL SIGNAL CHARACTERISTICS f= 1 kHz, Vox = 10V, Ig = 2 mA Symbol Characteristic 2N5365 | 2N5366 | 2N5367 Units hie Input Resistance 1100 3200 5800 ohms Noe Output Conductance 18 35 58 mhos hte Forward current transfer ratio 100 200 400 hre Reverse voltage feedback ratio 1.2 3.0 5.0] x 10-4 5022N5365, 6, 7 TYPICAL BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 2N5365, 5366, 5367 3" Te 10 Ig J i rat 3 LL} J Y E : ne B5C | ea 1 5 Lt Dd va 7 beeen rors | * | + TYPICAL OUTPUT CAPACITANCE AND INPUT CAPACITANCE VS. REVERSE BIAS VOLTAGE 2N5365, 5366, 5367 & 22 cb AND Cep- OUTPUT AND INPUT CAPACITANCE - pF 0 Lo (0 100 Veg OR Veq- REVERSE BIAS VOLTAGE - VOLTS 5032N5365, 6, 7 - mA (- COLLECTOR CURRENT Ig COLLECTOR CURRENT - ma. lg COLLECTOR CURRENT-mA Yog COLLECTOR VOLTAGE - millivetts Nog -COLLECTOR VOLTAGE - mbilvotts Vog- COLLECTOR VOLTAGE - millivolts TYPICAL COLLECTOR CHARACTERISTICS 2N5365 2N5366 2N5367 504 Ig COLLECTOR CURRENT -mA Vice COLLECTOR VOLTAGE - VOLTS lg COLLECTOR CURRENT - mA Nog OLLECTOR VOLTAGE - VOLTSSOURCE RESISTANCE IN k OHMS 001 Ol 10 1.0 10 100 I, COLLECTOR CURRENT mA SOURCE RESISTANCE IN OHMS 00! Ob A Lo lo 100 I, COLLECTOR CURRENT mA o SOURCE RESISTANCE IN k OHMS 6 Ol Ol Ol ol 1.0 10 100 Ie COLLECTOR CURRENT mA 505