TLP627M,TLP627MF Photocouplers Infrared LED & Photo Darlington Transistor TLP627M,TLP627MF 1. Applications * Programmable Logic Controllers (PLCs) * I/O Interface Boards * Home Electric Appliances 2. General TLP627M is a photocoupler that consists of an infrared emitting diode optically coupled to a photo darlington transistor. Housed in a 4pin DIP, it has a high noise immunity and high insulation. With the high breakdown voltage between the collector and emitter, TLP627M is suitable in applications such as 100 V DC output modules of programmable controllers. TLP627MF is a lead forming type for the long creepage mounting of TLP627M. 3. Features (1) Collector-emitter voltage: 300 V (min) (2) Current transfer ratio: 1000 % (min) (@IF = 1 mA, VCE = 1 V) (3) Isolation voltage: 5000 Vrms (min) (4) Operating temperature: -55 to 110 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory (Pending) Note 1: When a VDE approved type is needed, please designate the Option (D4) (D4). Start of commercial production (c)2018 Toshiba Electronic Devices & Storage Corporation 1 2018-12 2018-12-06 Rev.1.0 TLP627M,TLP627MF 4. Packaging (Note) TLP627M TLP627M(LF1,TP1) TLP627M(LF5,TP5) 11-5B205S 11-5B201S 11-5B2S TLP627MF TLP627MF(LF4,TP4) 11-5B204S 11-5B202S Note: Through-hole type: TLP627M, TLP627MF Lead forming option: (LF1), (LF4), (LF5) Taping option: (TP1), (TP4), (TP5) 5. Pin Assignment 1: Anode 2: Cathode 3: Emitter 4: Collector 6. Mechanical Parameters 7.62 mm pitch TLP627M type (Min) 10.16 mm pitch TLP627MF type (Min) Unit Creepage distances 7.0 8.0 mm Clearance 7.0 8.0 Internal isolation thickness 0.4 0.4 Characteristics (c)2018 Toshiba Electronic Devices & Storage Corporation 2 2018-12-06 Rev.1.0 TLP627M,TLP627MF 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating (Ta 90 ) Unit IF 50 mA -1.42 mA/ 1 A 5 V IFP Input reverse voltage VR Input power dissipation (Ta 90 ) Rating IF/Ta Input forward current (pulsed) Input power dissipation derating Note (Note 1) PD 100 mW PD/Ta -2.85 mW/ Tj 125 Detector Collector-emitter voltage Junction temperature VCEO 300 V Emitter-collector voltage VECO 0.3 V IC 150 mA Collector current Collector power dissipation Collector power dissipation derating (Ta 25 ) PC 150 mW PC/Ta -1.5 mW/ Junction temperature Common Operating temperature Storage temperature 125 -55 to 110 Tstg -55 to 125 (10 s) Tsol 260 PT 250 mW (Ta 25 ) PT/Ta -2.5 mW/ (AC, 60 s, R.H. 60 %) BVS 5000 Vrms Lead soldering temperature Total power dissipation Total power dissipation derating Isolation voltage Tj Topr (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 8. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Symbol Characteristics LED Input forward voltage Note Test Condition Min Typ. Max Unit 1.25 1.4 V VF IF = 10 mA 1.1 Input reverse current IR VR = 5 V 10 A Input capacitance Ct V = 0 V, f = 1 MHz 30 pF Detector Collector-emitter breakdown voltage V(BR)CEO IC = 0.1 mA 300 V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 0.3 V Dark Current VCE = 200 V 0.002 0.2 A VCE = 200 V, Ta = 85 20 V = 0 V, f = 1 MHz 900 pF IDARK Collector-emitter capacitance CCE 9. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Current transfer ratio Symbol Note Test Condition Min Typ. Max Unit IC/IF IF = 1 mA, VCE = 1 V 1000 6000 % IC/IF(sat) IF = 10 mA, VCE = 1 V 500 % Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IF = 1 mA 1.0 V IC = 100 mA, IF = 10 mA 0.3 1.2 VF = 0.7 V, VCE = 200 V 20 Saturated current transfer ratio OFF-state collector current IC(off) (c)2018 Toshiba Electronic Devices & Storage Corporation 3 A 2018-12-06 Rev.1.0 TLP627M,TLP627MF 10. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. 60 % Isolation voltage BVS Note Test Condition (Note 1) AC, 60 s Min Typ. Max Unit 0.6 pF 1 x 1012 1014 5000 Vrms Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 11. Switching Characteristics (Unless otherwise specified,Ta = 25 ) Characteristics Rise time Fall time Symbol tr tf Turn-on time ton Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff Note Test Condition VCC = 10 V, IC = 10 mA, RL = 100 See Fig. 11.1. RL = 180 , VCC = 10 V, IF = 16 mA Min Typ. Max Unit 60 s 30 110 30 2 25 80 Fig. 11.1 Switching Time Test Circuit and Waveform (c)2018 Toshiba Electronic Devices & Storage Corporation 4 2018-12-06 Rev.1.0 TLP627M,TLP627MF 12. Characteristics Curves (Note) Fig. 12.1 IF - Ta Fig. 12.2 PC - Ta Fig. 12.3 IFP - DR Fig. 12.4 IF - VF Fig. 12.5 VF/Ta - IF Fig. 12.6 IFP - VFP (c)2018 Toshiba Electronic Devices & Storage Corporation 5 2018-12-06 Rev.1.0 TLP627M,TLP627MF Fig. 12.7 IC - VCE Fig. 12.8 IDARK - Ta Fig. 12.9 VCE(sat) - Ta Fig. 12.10 IC - IF Fig. 12.11 IC/IF - IF Fig. 12.12 IC - Ta (c)2018 Toshiba Electronic Devices & Storage Corporation 6 2018-12-06 Rev.1.0 TLP627M,TLP627MF Fig. 12.13 Switching Time - RL Note: Fig. 12.14 Switching Time - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2018 Toshiba Electronic Devices & Storage Corporation 7 2018-12-06 Rev.1.0 TLP627M,TLP627MF 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. * When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used * When using soldering flow Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds. Mounting condition of 260 within 10 seconds is recommended. Flow soldering must be performed once. * When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not exceeding 350 Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage * Avoid storage locations where devices may be exposed to moisture or direct sunlight. * Follow the precautions printed on the packing label of the device for transportation and storage. * Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %, respectively. * Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. * Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. * When restoring devices after removal from their packing, use anti-static containers. * Do not allow loads to be applied directly to devices while they are in storage. * If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. (c)2018 Toshiba Electronic Devices & Storage Corporation 8 2018-12-06 Rev.1.0 TLP627M,TLP627MF 14. Marking (Note) Fig. 14.1 Marking example of TLP627M Note: Fig. 14.2 Marking example of TLP627MF A different marking is used for photocouplers that have been qualified according to option (D4) of EN 60747. See Fig.15.4 and Fig.15.5. (c)2018 Toshiba Electronic Devices & Storage Corporation 9 2018-12-06 Rev.1.0 TLP627M,TLP627MF 15. EN 60747-5-5 Option (D4) Specification * Part number: TLP627M, TLP627MF (Note 1) * The following part naming conventions are used for the devices that have been qualified according to option (D4) of EN 60747. Example: TLP627M(D4-TP1,E D4: EN 60747 option TP1: Tape type E: [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. e.g., TLP627M(D4-TP1,E TLP627M Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Fig. 15.1 EN 60747 Insulation Characteristics (c)2018 Toshiba Electronic Devices & Storage Corporation 10 2018-12-06 Rev.1.0 TLP627M,TLP627MF Fig. 15.2 Insulation Related Specifications (Note) Note: Note: If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value. (e.g., at a standard distance between soldering eye centers of 7.5 mm). If this is not permissible, the user shall take suitable measures. This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Fig. 15.3 Marking on packing for EN 60747 Fig. 15.4 Marking Example of TLP627M(Note) Note: Fig. 15.5 Marking Example of TLP627MF(Note) The above marking is applied to the photocouplers that have been qualified according to option (D4) of EN 60747. (c)2018 Toshiba Electronic Devices & Storage Corporation 11 2018-12-06 Rev.1.0 TLP627M,TLP627MF Fig. 15.6 Measurement Procedure (c)2018 Toshiba Electronic Devices & Storage Corporation 12 2018-12-06 Rev.1.0 TLP627M,TLP627MF Package Dimensions Unit: mm TLP627M Weight: 0.24 g (typ.) Package Name(s) TOSHIBA: 11-5B2S (c)2018 Toshiba Electronic Devices & Storage Corporation 13 2018-12-06 Rev.1.0 TLP627M,TLP627MF Package Dimensions Unit: mm TLP627M(LF1,TP1) Weight: 0.24 g (typ.) Package Name(s) TOSHIBA: 11-5B201S (c)2018 Toshiba Electronic Devices & Storage Corporation 14 2018-12-06 Rev.1.0 TLP627M,TLP627MF Package Dimensions Unit: mm TLP627M(LF5,TP5) Weight: 0.24 g (typ.) Package Name(s) TOSHIBA: 11-5B205S (c)2018 Toshiba Electronic Devices & Storage Corporation 15 2018-12-06 Rev.1.0 TLP627M,TLP627MF Package Dimensions Unit: mm TLP627MF Weight: 0.24 g (typ.) Package Name(s) TOSHIBA: 11-5B202S (c)2018 Toshiba Electronic Devices & Storage Corporation 16 2018-12-06 Rev.1.0 TLP627M,TLP627MF Package Dimensions Unit: mm TLP627MF(LF4,TP4) Weight: 0.24 g (typ.) Package Name(s) TOSHIBA: 11-5B204S (c)2018 Toshiba Electronic Devices & Storage Corporation 17 2018-12-06 Rev.1.0 TLP627M,TLP627MF RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". * TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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