TLHF4600 Vishay Semiconductors High Intensity LED in o 3 mm Tinted Diffused Package Color Soft orange Type Technology TLHF4600 AlInGaP on GaAs Angle of Half Intensity o 60 Description This device has been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes It is housed in a 3 mm diffused plastic package. The wide viewing angle of these devices provides a high brightness. All packing units are categorized in luminous intensity and color groups. That allows users to assemble LEDs with uniform appearance. 96 11675 Features D D D D D D D AlInGaP technology Applications Standard o 3 mm (T-1) package Small mechanical tolerances Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Suitable for DC and high peak current Wide viewing angle Very high intensity Luminous intensity color categorized Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified TLHF4600 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number 83134 Rev. A3, 05-Oct-00 Test Conditions Tamb 60C tp 10 ms Tamb 60C t 5 s, 2 mm from body Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 80 100 -40 to +100 -55 to +100 260 400 Unit V mA A mW C C C C K/W www.vishay.com 1 (5) TLHF4600 Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25_C, unless otherwise specified Soft orange (TLHF4600 ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test Conditions IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol IV ld lp VF VR Cj Min 10 598 Typ 26 605 610 60 1.9 Max Unit mcd nm nm deg V V pF 611 2.6 5 15 Typical Characteristics (Tamb = 25_C, unless otherwise specified) 0 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 125 100 75 50 25 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10887 0.6 Figure 1. Power Dissipation vs. Ambient Temperature 0.2 0 0.2 0.4 0.6 Figure 3. Rel. Luminous Intensity vs. Angular Displacement 60 100 50 I F - Forward Current ( mA ) IF - Forward Current ( mA ) 0.4 95 10043 40 30 20 10 10 1 1 0 0 95 10894 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 2 (5) 95 10878 1.5 2.0 2.5 3.0 VF - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage Document Number 83134 Rev. A3, 05-Oct-00 TLHF4600 Vishay Semiconductors IF = 10 mA 1.4 I Vrel- Relative Luminous Intensity I Vrel- Relative Luminous Intensity 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 95 10880 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 1.2 IF = 10 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 560 570 580 590 600 610 620 630 640 650 660 95 10885 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature l - Wavelength ( nm ) Figure 7. Relative Luminous Intensity vs. Wavelength I Vrel- Relative Luminous Intensity 10.00 1.00 0.10 0.01 1 96 11588 10 100 IF - Forward Current ( mA ) Figure 6. Relative Luminous Intensity vs. Forward Current Document Number 83134 Rev. A3, 05-Oct-00 www.vishay.com 3 (5) TLHF4600 Vishay Semiconductors Dimensions in mm 95 10913 www.vishay.com 4 (5) Document Number 83134 Rev. A3, 05-Oct-00 TLHF4600 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83134 Rev. A3, 05-Oct-00 www.vishay.com 5 (5)