DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES 2N7000 QUICK REFERENCE DATA * Low RDS(on) SYMBOL * Direct interface to C-MOS, TTL, etc. VDS drain-source voltage ID * High-speed switching * No secondary breakdown. PARAMETER CONDITIONS MAX. 60 V drain current DC value 280 mA RDS(on) drain-source on-resistance ID = 500 mA VGS = 10 V 5 VGS(th) gate-source threshold voltage ID = 1 mA VGS = VDS 3 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. PIN CONFIGURATION PINNING - TO-92 VARIANT d handbook, halfpage PIN DESCRIPTION 1 drain 2 gate 3 source 1 2 3 g MAM146 s Fig.1 Simplified outline and symbol. April 1995 2 UNIT Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor 2N7000 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 60 V VDG drain-gate voltage - 60 V VGSO gate-source voltage open drain - 40 V ID drain current DC value - 280 mA IDM drain current peak value - 1.3 A Ptot total power dissipation Tamb = 25 C - 830 mW Tstg storage temperature range -55 150 C Tj junction temperature - 150 C THERMAL RESISTANCE SYMBOL Rth j-a April 1995 PARAMETER VALUE from junction to ambient 150 3 UNIT K/W Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor 2N7000 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 A VGS = 0 60 90 - V IDSS drain-source leakage current VDS = 48 V VGS = 0 - - 1 A IGSS gate-source leakage current VGS = 15 V VDS = 0 - - 10 nA VGS(th) gate-source threshold voltage ID = 1 mA VGS = VDS 0.8 - 3 V RDS(on) drain-source on-resistance ID = 500 mA VGS = 10 V - 3.5 5 ID = 75 mA VGS = 4.5 V - - 5.3 Yfs transfer admittance ID = 200 mA VDS = 10 V 100 200 - mS Ciss input capacitance VDS = 10 V VGS = 0 f = 1 MHz - 25 40 pF Coss output capacitance VDS = 10 V VGS = 0 f = 1 MHz - 22 30 pF Crss feedback capacitance VDS = 10 V VGS = 0 f = 1 MHz - 6 10 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 200 mA VDD = 50 V VGS = 0 to 10 V - 4 10 ns toff turn-off time ID = 200 mA VDD = 50 V VGS = 0 to 10 V - 4 10 ns April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VDD = 50 V handbook, halfpage 2N7000 handbook, halfpage 90 % INPUT 10 % 90 % 10 V OUTPUT ID 0V 50 10 % ton MSA631 toff MBB692 Fig.2 Switching time test circuit. handbook, Fig.3 Input and output waveforms. MDA690 1 MDA691 1.6 handbook, halfpage Ptot ID (A) (W) 0.8 1.2 VGS = 10 V 0.6 6V 0.8 0.4 5V 0.4 0.2 4V 3V 0 0 50 100 0 150 200 Tamb (C) 0 8 12 VDS (V) 16 Fig.5 Typical output characteristics; Tj = 25 C. Fig.4 Power derating curve. April 1995 4 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor MDA692 1.6 2N7000 MDA693 20 handbook, halfpage handbook, halfpage RDSon () ID (A) 16 VGS = 3 V 1.2 12 0.8 4V 8 5V 0.4 4 0 0 0 Fig.6 8 4 VGS (V) 12 Typical transfer characteristic; VDS = 10 V; Tj = 25 C. handbook, halfpage C (pF) 60 40 Ciss Coss 20 Crss 0 0 Fig.8 April 1995 5 10 15 1 Fig.7 MDA694 80 10 V 20 25 VDS (V) Typical capacitances as a function of drain-source voltage; VGS = 0; f = 1 MHz; Tj = 25 C. 6 10 102 103 ID (mA) 104 Typical on-resistance as a function of drain current; Tj = 25 C. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor MDA695 2.4 2N7000 MDA696 1.2 handbook, halfpage handbook, halfpage k k 2 1.1 (1) 1.6 1 (2) 1.2 0.9 0.8 0.8 0.4 -50 0 50 100 Tj (C) 0.7 -50 150 0 50 100 Tj (C) 150 (1) ID = 500 mA; VGS = 10 V. (2) ID = 75 mA; VGS = 4.5 V. Fig.9 April 1995 Temperature coefficient of drain-source on resistance; R DS ( on ) at T j k = ---------------------------------------------; typical RDS(on). R DS ( on ) at 25 C Fig.10 Temperature coefficient of gate-source threshold voltage; V GS ( th ) at T j - ; typical VGS(th) at 1 mA. k = -------------------------------------------V GS ( th ) at 25 C 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor 2N7000 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant April 1995 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 8 EUROPEAN PROJECTION ISSUE DATE 97-04-14 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor 2N7000 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 9 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 10 2N7000 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 11 2N7000 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com (c) Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137107/00/01/pp12 Date of release: April 1995 Document order number: 9397 750 02441