VS-40TPS16PbF, VS-40TPS16-M3
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Revision: 10-Nov-11 1Document Number: 94389
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High Voltage Phase Control Thyristor, 40 A
FEATURES
• High voltage (up to 1600 V)
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
• 125 °C max. operating junction temperature
• Halogen-free according to IEC 61249-2-21
definition (-M3 only)
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-40TPS16... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
PRODUCT SUMMARY
Package TO-247AC
Diode variation Single SCR
IT(AV) 35 A
VDRM/VRRM 1600 V
VTM 1.45 V
IGT 150 mA
TJ- 40 °C to 125 °C
(G) 3
2
(A)
1 (K)
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 35
A
IRMS 55
VRRM/VDRM 1600 V
ITSM 500 A
VT40 A, TJ = 25 °C 1.45 V
dV/dt 1000 V/μs
dI/dt 100 A/μs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-40TPS16PbF, VS-40TPS16-M3 1600 1700 10
VS-40TPS16PbF, VS-40TPS16-M3
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 79 °C, 180° conduction half sine wave 35
A
Maximum continuous RMS
on-state current as AC switch IT(RMS) 55
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied
Initial TJ =
TJ maximum
500
10 ms sine pulse, no voltage reapplied 600
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 1250 A2s
10 ms sine pulse, no voltage reapplied 1760
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 12 500 A2s
Low level value of threshold voltage VT(TO)1
TJ = 125 °C
1.02 V
High level value of threshold voltage VT(TO)2 1.23
Low level value of on-state slope resistance rt1 9.74 m
High level value of on-state slope resistance rt2 7.50
Maximum peak on-state voltage VTM 110 A, TJ = 25 °C 1.85 V
Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 100 A/µs
Maximum holding current IH150
mA
Maximum latching current IL300
Maximum reverse and direct leakage current IRRM/IDRM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
TJ = 125 °C 10
Maximum rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open 1000 V/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10
V
Maximum required DC gate
voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V resistive load
4.0
TJ = 25 °C 2.5
TJ = 125 °C 1.7
Maximum required DC gate current to trigger IGT
TJ = - 40 °C 270
mA
TJ = 25 °C 150
TJ = 125 °C 80
TJ = 25 °C, for 40TPS08A 40
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25 V
Maximum DC gate current not to trigger IGD 6mA
VS-40TPS16PbF, VS-40TPS16-M3
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Revision: 10-Nov-11 3Document Number: 94389
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.6
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC 40TPS16
70
80
90
100
110
120
130
010203040
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
40TPS.. Series
R (DC) = 0.6 °C/ W
thJC
70
80
90
100
110
120
130
0 102030405060
DC
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
40TPS.. Serie s
R (DC) = 0.6 °C/ W
thJC
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
4 0 TPS. . Se r i e s
T = 125°C
J
0
10
20
30
40
50
60
70
80
0 102030405060
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
40TPS.. Series
T = 125 °C
J
VS-40TPS16PbF, VS-40TPS16-M3
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Revision: 10-Nov-11 4Document Number: 94389
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
250
300
350
400
450
500
550
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
4 0 TPS. . Se r i e s
At Any Ra ted Load Condition And With
Rated V Applied Following Surge.
RRM
250
300
350
400
450
500
550
600
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Tra in Dura t io n ( s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction Ma y Not Be Maintained.
4 0 TP S. . Se r i e s
Initia l T = 125°C
No Volta ge Rea p p lied
Rated V Reapplied
J
RRM
1
10
100
0.5 1 1.5 2
T = 2 5 ° C
Instantaneous On-state Current (A)
In st a n t a n e o u s O n- st a t e V o lt a g e ( V)
T = 125°C
J
4 0 TP S. . Se r i e s
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
ra ted di/ dt : 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
40TPS..
VS-40TPS16PbF, VS-40TPS16-M3
www.vishay.com Vishay Semiconductors
Revision: 10-Nov-11 5Document Number: 94389
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Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-40TPS16PbF 25 500 Antistatic plastic tubes
VS-40TPS16-M3 25 500 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95223
Part marking information TO-247AC PbF www.vishay.com/doc?95226
TO-247AC -M3 www.vishay.com/doc?95007
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
40TPS.. Se rie s
thJC
Tr a n si e n t Th e r m a l I m p e d a n c e Z ( ° C / W )
2
- Current rating (40 = 40 A)
3
- Circuit configuration:
4
- Package:
5
T = Thyristor
- Type of silicon:
6
- Voltage rating (16 = 1600 V)
P = TO-247
S = Standard recovery rectifier
7
-
Device code
62 43 5 7
40 T P S 16 PbF
1-Vishay Semiconductors product
1
VS-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
Outline Dimensions
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Revision: 16-Jun-11 1Document Number: 95223
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DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Ø P (Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
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