T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 1 of 7
2N3700UB
Availa ble on
commercial
versions
Low Power NPN Silicon Transistor
Qualified per MIL-PRF-19500/391
Qualified Levels:
JAN, JANTX,
JANTXV, and JANS
DESCRIPTION
This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
applications.
UB Package
Also available in:
TO-18 (TO-206AA)
(leaded)
2N3700
TO-39 (TO-205AD)
(leaded)
2N3019
TO-5 package
(leaded)
2N3019S
TO-46 (TO-206AB)
(leaded)
2N3057A
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent to JEDEC registered 2N3700 number.
• JAN, JANTX, JANTXV and JANS qualifications are av aila ble per MIL-PRF-19500/391.
• Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for
JANS_2N3700UB.)
• RoHS compliant versions available (commercial grade only).
APPLICA TIONS / BENEFITS
• Ceramic UB surface mount package.
• Lightweight.
• Low power.
• Military and other high-reliability app lic ations.
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Impedance Junction-to-Ambient
RӨJA
325
oC/W
Thermal Impedance Junction-to-Solder Pad
RӨJSP
90
oC/W
Collector-Emitter Voltage
VCEO
80
V
Collector-Base Voltage
VCBO
140
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Total Power Dissipation: @ TA = +25 oC (1)
PD
0.5
W
Notes: 1. Derate linearl y 6.6 mW/°C for TA ≥ +25 °C.
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2N3700UB
MECHANICAL and PACKAGING
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel und er plate (hot solder dip optional for military).
• MARKING: Part number, date code, manufacturer’s ID.
• TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities.
• WEIGHT: < 0.04 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3700 UB (e4)
Reliability Level
JAN = JAN leve l
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e4 = RoHS compliant (gold
plating without solder dip option)
Blank = non-RoHS compliant
Surface Mount P acka ge
SYMBOLS & DEFINITIONS
Symbol
Definition
f
Frequency
IB
Base current (dc)
IE
Emitter current (dc)
TA
Ambient temperature
TC
Case temperature
TSP
Solder pad temperature
VCB
Collector to base voltage (dc)
VCE
Collector to emitter voltage (dc)
VEB
Emitter to base voltage (dc)
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2N3700UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mA
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base Cutoff Current
VEB = 7 V
IEBO1 10 µA
Collector-Emitter Cutoff Current
VCE = 90 V
ICES 10 nA
Emitter-Base Cutoff Current
VEB = 5.0 V
IEBO2 10 nA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
hFE
100
50
90
50
15
300
300
300
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA VCE(sat)
0.2
0.5 V
Base-Emitter Saturation Voltage
VBE(sat) 1.1 V
IC = 150 mA, IB = 15 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Shor t-Circuit Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 5. 0 V, f = 1.0 kHz hfe 80 400
Magnitude of Small-Signa l Short -Circuit Forward Current
Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz |hfe| 5.0 20
Output Capac ita nc e
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 60 pF
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2N3700UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted (continued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = 25 °C, 1 cycle, t = 10 ms
Test 1
2N3700UB
V
CE
= 10 V
IC = 180 mA
Test 2
2N3700UB
V
CE
= 40 V
IC = 45 mA
Test 3
2N3700UB
V
CE
= 80 V
IC = 22.5 mA
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area @ TA = 25 ºC
See additional SOA graph on next page.
I
C
– COLLECTOR CURRE NT - A
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2N3700UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted (continued)
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (TSP = 25°C)
I
C
– COLLECTOR CURRE NT - A
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2N3700UB
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature-Power Derating (RӨJA)
TSP (oC) Solder Pa d
FIGURE 2
Temperature-Power Derating (RӨJSP)
Maximum DC Operation Rating (W)
Maximum DC Operation Rating (W)
T4-LDS-0185-3, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 7 of 7
2N3700UB
PACKAGE DIMENSIONS
Symbol
Dimensions
Note
Symbol
Dimensions
Note
Inch
Millimeters
Inch
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
0.046
0.056
1.17
1.42
LS1
0.035
0.039
0.89
0.99
BL
0.115
0.128
2.92
3.25
LS2
0.071
0.079
1.80
2.01
BW
0.085
0.108
2.16
2.74
LW
0.016
0.024
0.41
0.61
CL
-
0.128
-
3.25
r
-
0.008
-
0.20
CW
-
0.108
-
2.74
r1
-
0.012
-
0.31
LL1
0.022
0.038
0.56
0.96
r2
-
.022
-
0.56
LL2
0.017
0.035
0.43
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Lid
