2N5109 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * General purpose * VHF-UHF amplifier transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5109J) * JANTX level (2N5109JX) * JANTXV level (2N5109JV) * JANS level (2N5109JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features * Radiation testing (total dose) upon request * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 1009 Reference document: MIL-PRF-19500/453 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 20 Collector-Base Voltage VCBO 40 Unit Volts Volts Emitter-Base Voltage VEBO 3 Volts IC 400 mA 1 5.71 2.9 16.6 Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 25C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2010 Rev. D RJA 175 W mW/C W mW/C C/W TJ -65 to +200 C TSTG -65 to +200 C PT PT SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5109 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Test Conditions Collector-Base Breakdown Voltage V(BR)CBO IC = 100 A 40 Units Volts Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5 mA 20 Volts Collector-Emitter Breakdown Voltage V(BR)CER IC = 5 mA, RBE = 10 40 Volts Emitter-Base Breakdown Voltage V(BR)EBO 3 Volts Collector-Emitter Cutoff Current ICEO1 ICEO2 IE = 100 A VCE = 15 Volts VCE = 15 Volts, TA = 175C On Characteristics Min Typ Max 20 5 A mA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 DC Current Gain Collector-Emitter Saturation Voltage VCEsat Test Conditions IC = 50 mA, VCE = 15 Volts IC = 50 mA, VCE = 5 Volts TA = -55C IC = 100 mA, IB = 10 mA Min 40 15 Test Conditions VCE = 15 Volts, f = 200 MHz, IC = 25 mA IC = 50 mA IC = 100 mA VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCC = 15 Volts, IC = 50 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 54 dB output VCC = 15 Volts, IC = 10 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 50 MHz < f < 216 MHz, Pin = -10dB Min Typ Max 150 Units 0.5 Volts Max Units Dynamic Characteristics Parameter Symbol Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE1| |hFE2| |hFE3| Open Circuit Output Capacitance COBO Power Gain (narrow band) current GPE Cross Modulation cm Noise Figure NF Voltage Gain (wideband) G Copyright 2010 Rev. D SEMICOA Corporation Typ 5 6 5 3.5 11 pF dB 11 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com 10.0 11.0 10.5 -57 dB 3.5 dB dB Page 2 of 2