AUIRLS3034 AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS ID (Silicon Limited) 1.7m 343A ID (Package Limited) 195A D S G D2Pak AUIRLS3034 G Gate D Drain Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Package Type D2-Pak AUIRLS3034 1.4m max. Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Base part number 40V RDS(on) typ. S Source Orderable Part Number AUIRLS3034 AUIRLS3034TRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 343 ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 243 195 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 1372 375 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Units A W 2.5 20 255 See Fig.14,15, 22a, 22b 4.6 -55 to + 175 W/C V mJ A mJ V/ns C 300 Parameter Typ. Max. Units Junction-to-Case Junction-to-Ambient (PCB Mount) --- --- 0.4 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-4 AUIRLS3034 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs RG(Int) Gate Threshold Voltage Forward Trans conductance Internal Gate Resistance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 40 --- --- --- 1.0 286 --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.04 --- V/C Reference to 25C, ID = 5mA 1.4 1.7 VGS = 10V, ID = 195A m 1.6 2.0 VGS = 4.5V, ID = 172A --- 2.5 V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 195A 2.1 --- --- 20 VDS = 40V, VGS = 0V A --- 250 VDS = 40V,VGS = 0V,TJ =125C --- 100 VGS = 20V nA --- -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg -Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance --- --- --- 162 --- --- ID = 185A VDS = 20V nC VGS = 4.5V --- --- --- --- --- --- 108 29 54 54 65 827 97 355 10315 1980 --- --- --- --- --- --- Reverse Transfer Capacitance --- 935 --- Coss eff.(ER) Effective Output Capacitance (Energy Related) --- 2378 --- VDD = 26V ID = 195A ns RG= 2.1 VGS = 4.5V VGS = 0V VDS = 25V pF = 1.0MHz VGS = 0V, VDS = 0V to 32V Crss Coss eff.(TR) Effective Output Capacitance (Time Related) --- 2986 --- VGS = 0V, VDS = 0V to 32V Min. Typ. Max. Units --- --- 343 --- --- 1372 --- --- --- --- --- --- --- 39 41 39 46 1.7 1.3 --- --- --- --- --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 195A,VGS = 0V TJ = 25C VDD = 34V ns TJ = 125C IF = 195A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.013mH, RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value. ISD 195A, di/dt 841A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C. RJC value shown is at time zero. 2 2015-11-4 AUIRLS3034 100000 100000 TOP ID, Drain-to-Source Current (A) 10000 BOTTOM 1000 TOP 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 4.5V 3.5V 3.0V 2.7V 2.5V 10000 100 10 BOTTOM 60s PULSE WIDTH Tj = 175C 1000 100 2.5V 2.5V 10 1 0.1 1 10 0.1 100 Fig. 1 Typical Output Characteristics 10 100 Fig. 2 Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) 10000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 1000 T J = 175C 100 T J = 25C 10 1 VDS = 25V 60s PULSE WIDTH 0.1 ID = 195A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED Crss = C gd C iss 10000 Coss = Cds + Cgd C oss Crss 1000 5.0 ID = 185A 4.5 VGS, Gate-to-Source Voltage (V) 100000 C, Capacitance (pF) VGS 15V 10V 8.0V 4.5V 3.5V 3.0V 2.7V 2.5V VDS = 32V VDS = 20V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 0.0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 0 20 40 60 80 100 120 140 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-11-4 AUIRLS3034 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10000 1000 T J = 175C 100 T J = 25C 10 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100sec 100 1msec LIMITED BY PACKAGE 10msec 10 DC 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 1.0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 0.1 VSD , Source-to-Drain Voltage (V) 350 Limited By Package ID, Drain Current (A) 250 200 150 100 50 0 25 50 75 100 125 150 Id = 5mA 48 46 44 42 40 -60 -40 -20 0 20 40 60 80 100 120 140160 180 175 T J , Temperature ( C ) Fg 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 1200 EAS , Single Pulse Avalanche Energy (mJ) 2.5 ID 38.9A 65.3A BOTTOM 195A TOP 1000 2.0 Energy (J) 100 50 TC , Case Temperature (C) 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 10 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 300 1 VDS , Drain-to-Source Voltage (V) 40 45 800 600 400 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2015-11-4 AUIRLS3034 Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 Ri (C/W) 0.20 0.10 J 0.05 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 3 4 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R4 R4 1E-005 I (sec) 0.02477 0.000025 0.08004 0.000077 0.19057 0.001656 0.10481 0.008408 C Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 2015-11-4 AUIRLS3034 14 IF = 78A V R = 34V TJ = 25C 12 2.5 10 TJ = 125C 2.0 IRRM (A) VGS(th) , Gate threshold Voltage (V) 3.0 1.5 ID = 250A ID = 1.0mA 1.0 8 6 4 ID = 1.0A 0.5 2 0 0.0 -75 -50 -25 0 0 25 50 75 100 125 150 175 100 300 400 500 diF /dt (A/s) T J , Temperature ( C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 400 14 IF = 117A V R = 34V 12 IF = 78A VR = 34V TJ = 25C TJ = 125C TJ = 25C TJ = 125C 300 QRR (nC) 10 IRRM (A) 200 8 6 4 200 100 2 0 0 0 100 200 300 400 0 500 100 200 300 400 500 diF /dt (A/s) diF /dt (A/s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 400 IF = 117A VR = 34V TJ = 25C TJ = 125C QRR (nC) 300 200 100 0 0 100 200 300 400 500 diF /dt (A/s) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2015-11-4 AUIRLS3034 Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit I AS Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 24b. Gate Charge Waveform 2015-11-4 AUIRLS3034 D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRLS3034 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-11-4 AUIRLS3034 D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-4 AUIRLS3034 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak Machine Model Human Body Model ESD Charged Device Model RoHS Compliant MSL1 Class M4 (+/- 800V) AEC-Q101-002 Class H3A (+/- 6000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/20/2014 4/9/2014 11/4/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated package outline and part marking on page 8. Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6. Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-11-4 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: AUIRLS3034TRL AUIRLS3034TRR AUIRLS3034