AUIRLS3034
VDSS 40V
RDS(on) typ. 1.4m
max. 1.7m
ID (Silicon Limited) 343A
ID (Package Limited) 195A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
1 2015-11-4
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 343
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 243
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 195
IDM Pulsed Drain Current 1372
PD @TC = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 255
mJ
IAR Avalanche Current See Fig.14,15, 22a, 22b A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery 4.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.4
°C/W
RJA Junction-to-Ambient (PCB Mount) ––– 40
D2Pak
AUIRLS3034
S
D
G
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRLS3034 D2-Pak Tube 50 AUIRLS3034
Tape and Reel Left 800 AUIRLS3034TRL
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRLS3034
2 2015-11-4
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.013mH, RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value.
I
SD 195A, di/dt 841A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at TJ approximately 90°C.
RJC value shown is at time zero.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on) ––– 1.4 1.7 m VGS = 10V, ID = 195A
––– 1.6 2.0 VGS = 4.5V, ID = 172A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 286 ––– ––– S VDS = 10V, ID = 195A
RG(Int) Internal Gate Resistance ––– 2.1 –––
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250 VDS = 40V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 108 162
nC
ID = 185A
Qgs Gate-to-Source Charge ––– 29 ––– VDS = 20V
Qgd Gate-to-Drain Charge ––– 54 ––– VGS = 4.5V
Qsync Total Gate Charge Sync. (Qg –Qgd) 54
td(on) Turn-On Delay Time ––– 65 –––
ns
VDD = 26V
tr Rise Time ––– 827 ––– ID = 195A
td(off) Turn-Off Delay Time ––– 97 ––– RG= 2.1
tf Fall Time ––– 355 ––– VGS = 4.5V
Ciss Input Capacitance ––– 10315 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1980 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 935 ––– ƒ = 1.0MHz
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 2378 ––– VGS = 0V, VDS = 0V to 32V
Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 2986 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 343
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 1372 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 195A,VGS = 0V
trr Reverse Recovery Time ––– 39 ––– ns TJ = 25°C VDD = 34V
––– 41 ––– TJ = 125°C IF = 195A,
Qrr Reverse Recovery Charge ––– 39 –––
nC TJ = 25°C di/dt = 100A/µs
––– 46 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 1.7 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Static Drain-to-Source On-Resistance
AUIRLS3034
3 2015-11-4
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 4 Normalized On-Resistance vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 175°C
2.5V
12345
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 195A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 185A
AUIRLS3034
4 2015-11-4
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. Drain Current
Fg 9. Maximum Drain Current vs. Case Temperature
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
10000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
LIMITED BY PACKAGE
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
350
ID, Drain Current (A)
Limited By Package
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
40
42
44
46
48
50
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
Energy (µJ)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 38.9A
65.3A
BOTTOM 195A
AUIRLS3034
5 2015-11-4
Fig 14. Avalanche Current vs. Pulse width
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
23
3
R1
R1R2
R2R3
R3
Ci= iRi
Ci= iRi
C
C
4
4
R4
R4
Ri (°C/W) I (sec)
0.02477 0.000025
0.10481 0.008408
0.08004 0.000077
0.19057 0.001656
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 195A
AUIRLS3034
6 2015-11-4
Fig 16. Threshold Voltage vs. Temperature
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical Recovery Current vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
0100 200 300 400 500
diF /dt (A/µs)
0
2
4
6
8
10
12
14
IRRM (A)
IF = 78A
VR = 34V
TJ = 25°C
TJ = 125°C
0100 200 300 400 500
diF /dt (A/µs)
0
2
4
6
8
10
12
14
IRRM (A)
IF = 117A
VR = 34V
TJ = 25°C
TJ = 125°C
0100 200 300 400 500
diF /dt (A/µs)
0
100
200
300
400
QRR (nC)
IF = 78A
VR = 34V
TJ = 25°C
TJ = 125°C
0100 200 300 400 500
diF /dt (A/µs)
0
100
200
300
400
QRR (nC)
IF = 117A
VR = 34V
TJ = 25°C
TJ = 125°C
AUIRLS3034
7 2015-11-4
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 23b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
AUIRLS3034
8 2015-11-4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D2Pak (TO-263AB) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRLS3034
Lot Code
Part Number
IR Logo
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRLS3034
9 2015-11-4
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRLS3034
10 2015-11-4
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak MSL1
ESD
Machine Model Class M4 (+/- 800V)†
AEC-Q101-002
Human Body Model Class H3A (+/- 6000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Revision History
Date Comments
11/4/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
4/9/2014 Updated package outline and part marking on page 8.
Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.
3/20/2014 Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
