OPB822S - OPTEK TECHNOLOGY - Datasheet.Directory

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue B 9/2010

Page 1 of 4

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Dual Channel Encoder

OPB822S, OPB822SD

OPB826S, OPB826SD

Features:

• Non-contact switching

• Single or double apertures for high resolution

• Choice of slot widths

• Choice of side-by-side or over/under dual channels

• Choice of electrical outputs

Applications:

• Encoders

• Non-contact object sensing

• Assembly line automation

• Machine automation

• Equipment security

• Machine safety

RoHS

OPB826

OPB822

Description:

Each OPB822 and OPB826 slotted switch consist s of two infrared emitting diodes and two NPN silicon

phototransistors m ounted on opposite sides of a 0.090” (2.29 mm) wide slot (OPB822) or a 0.100” (2.54 mm) wide

slot (OPB826).

OPB822 uses an side-by-side mounting configuration, while OPB826 uses an over/under mounting configuration.

OPB822S has 0.01” by 0.04” (0.25 mm x 1.02 mm) apertures in front of both phototransistors while the

OPB822SD has the aperture in front of both phototransistors and both emitters. The OPB826S has 0.04” by

0.04” (1.02 mm x 1.02 mm) apertures in front of both phototransistors while the OPB826SD has the apert ure in

front of both phototransistors and both emitters.

Dual channels enable direction of travel sensing, with the low-cost plastic housing reduces possible interference

from ambient light and provides protection from dust and dirt.

Phototransistor switching occurs when a n opaque object passes through the device slot.

For information on encoder design, see Application Bulletin 203 at:

Custom electrical, wire an d cabling and connectors a re available. Contact your local rep re sentative or OPTEK for

more information.

Part

Number

LED

Peak

Wavelength

Sensor

Slot

Width /

Depth

Aper ture

Emitter/

Sensor

Lead

Length /

Spacing

OPB822S Dual

935 nm Dual

Transistor 0.09" /

0.30”

None / 0.01" 0.35" /

0.30"

OPB822SD 0.01" / 0.01"

OPB826S Dual

890 nm Dual

Transistor 0.10" /

0.42”

NA / 0.04"

OPB826SD 0.04" / 0.04"

0.20" /

0.74"

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 9/2010

Page 2 of 4

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Dual Channel Encoder

OPB822S, OPB822SD

OPB826S, OPB826SD

OPB822

OPB826

Pin # Description Pin # Description

8 Cathode-1 1 Collector-1

5 Anode-1 4 Emitter-1

7 Cathode-2 2 Collector-2

6 Anode-2 3 Emitter-2

Pin # Description Pin # Description

8 Cathode-1 1 Collector-1

5 Anode-2 4 Emitter-2

7 Anode-1 2 Emitter-1

6 Cathode-2 3 Collector-2

CONTAINS POLYSULFONE

To avoid stress cracking, we suggest using

ND Industries’ Vibra-Tite for thread-locking.

Vibra-Tite evaporates fast without causing structural

failure in OPTEK’s molded plastics.

DIMENSIONS ARE IN:

INCHES

[ MILLIMETERS]

DIMENSIONS ARE IN:

INCHES

[ MILLIMETERS]

White Dot Pin #1

8 5

Bottom View

Note 6

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue B 9/2010

Page 3 of 4

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Dual Channel Encoder

OPB822S, OPB822SD

OPB826S, OPB826SD

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

(2) Derate linearly 1.67 mW/°C above 25° C.

(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons

and ketones. Spray and wipe; do not submerge.

(4) Derate linearly 3.33 mW/°C above 25° C.

(5) All parameters tested using pulse techniques.

(6) Feature controlled at body.

Absolute Maximum Ratings (TA=25°C unless otherwi se noted)

Storage & Operating Temperature Range -40° C to +85° C

Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1) 240°C

Input Diode

Forward DC Current

OPB822S, OPB822SD

OPB826S, OPB826SD

50 mA

40 mA

Peak Forward Current (1 µs pulse width, 300 pps) 1 A

Reverse DC Voltage 2 V

Power Dissipation(2) 100 mW

Output Phototransistor

Collector-Emitter Voltage 30 V

Emitter-Collector Voltage 5 V

Collector DC Current 30 mA

Power Dissipation(2) 100 mW

0.050 [1.27] 0.040 [1.02]

0.040 [1.02]

0.050 [1.27]

0.020 [0.51]

0.025 [0.63]

10011001

00110011

Channel A

Channel B

Channel A

Channel B

0.106 [2.69] Typ.

00 1 0 00 0 11110011000

11 0 0001

01101001

0110100

1100000101010

0.212 [5. 38] Typ.

Sequence Sequence

Channel A

Channel B

Channel A

Encoder Sequence for OPB826

Encoder Sequence for OPB822

For information on encoder design,

see Application Bulletin 203 at:

http://www.optekinc.com/pdf/App_Note_203.pdf

Differential Tachometer Sequence

Pseudo Random Bit Sequence

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 9/2010

Page 4 of 4

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Dual Channel Encoder

OPB822S, OPB822SD

OPB826S, OPB826SD

Electrical Characteristics (OPB822, OPB826) (TA = 25°C unless otherwise noted)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode (see OP14O for OPB822 or OP266 for OPB826 for additional information)

VF Forward Voltage - - 1.7 V IF = 20 mA

IR Reverse Current - - 100 µA VR = 2 V

Output Phototransistor (see OP550 for OPB822 or OP506 for OPB826 for add itional information)

V(BR)(CEO) Collector-Emitter Breakdown Voltage 30 - - V IC = 1 mA

V(BR)(ECO) Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA

ICEO Collector-Emitter Leakage Current - - 100 nA VCE = 10 V, IF = 0, EE = 0

Coupled

IC(ON)

On-State Collector Current

OPB822S

OPB822SD

OPB826S

OPB826SD

250

100

250

100

µA

VCE = 5 V, IF = 20 mA

VCE = 10 V, IF = 20 mA

VCE(SAT)

Collector-Emitter Saturation Voltage

OPB822S

OPB822SD

OPB826S

OPB826SD

0.4

IC = 125 µA, IF = 20 mA

IC = 50 µA, IF = 20 mA

IC = 125 µA, IF = 20 mA

IC = 50 µA, IF = 20 mA

ICX1

Crosstalk

OPB822D, OPB822SD

OPB826S

OPB826SD

250

µA IF1 = 0 mA, IF2 = 20 mA, VCE = 10 V

Notes:

(1) All parameters tested using pulse techniques.