SIEMENS FEATURES * Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 Current Transfer Ratio (CTR) at IF= +5 mA ILD/Q620: 50% Min. ILD/Q620GB: 100% Min. * Saturated Current Transfer Ratio (CTRgaz) at lrp=+1mA ILD/Q620: 60% Typ. ILD/Q620GB: 30% Min. High Collector-Emitter Voltage, BVceg=70 V Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Field-Effect Stable by TRIOS (TRansparent lOn Shield) * Isolation Test Voltage from Double Molded Package Underwriters Lab File #E52744 VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Forward Current 20... eesseeeseeeeeseeeeesneeeeeeeees +60 mA SUG CUITONt.... eee eeeeeeeseeeeeeneeeeneeeeenaeeeeaees +1.5A Power Dissipation ...........eeeeeeseeeesneeeeeees 100 mw Derate frOM 25C oo eeeeeeteeteeeeeeeteees 1.3 mW/C Detector Collector-Emitter Breakdown Voltage ............. 70V Collector Current... eeeesseeeesteeeseeeteneeeeeees 50 mA Collector Current (t <1 MS)... eee 100 mA Power Dissipation ........... eeceeeseeeesneeeeeeees 150 mw Derate frOM 25C oe eeceeeeeeteetteeeeeeeeeeeee 2mwrc Package Isolation Test Voltage(t=1 sec.)......... 5300 VACams Package Dissipation, ILD620/GB.............. 400 mW Derate from 25C oe. eeeeecceeteeeeeeneeeens 5.33 mW/C Package Dissipation, ILQ620/GB............. 500 mW Derate from 25C oe. eeeeecceeteeeeeeneeeens 6.67 mW/C CHOCD AGC ooo... eeeceeeeneeeeeneeeeeeeeeeneeeenaeeeeeaes 7mm min. CIOAANCE ooo... ee eeteeeeeeeeeeeeeeenteeeneneeeeaees 7mm min. Isolation Resistance Vig= 500 V, TyH25C weecececcecsecceeeceseeceseees 210127 O Vig= 500 V, Ty=100C w.oeeececccceteeceteeeeeees 21011 Storage Temperature ......... 55C to +150C Operating Temperature............... 55C to +100C Junction Temperature ........ ce eeeeeeeseeeeesneeeeees 100C Soldering Temperature (2 mm from case bottom)....... eee 260C DUAL CHANNEL ILD620/620GB QUAD CHANNEL ILQ620/620GB AC INPUT PHOTOTRANSISTOR OPTOCOUPLER Dimensions in inches (mm) oy go ey fs fin One |.D. K=Cathode f q ak Ne 8 | Collector eee (6-43) AIK ole KE Emitter AIK BI r] Collector oe) eo of eo ~. na a afl AIK oe KB evite 390 (9.91) 379 (9.63) .045 (1.14) .150 (3.81) -305 Typ. | [77.030 (76) .130 (3.30) (7.75) Typ. | | 7 135 (3.43 i LF S38 (op) 10 Typ, 040 (1,00) RS) 030 (.76) xj 612 (30), 7.100 (2.54) Typ. 008 (.20) K=Cathode AIK Collector ~e. Pin One |.D. AK Emitter ay (3 [ata ie oy (u tia ce AIK Collector q AIK Emitter 268 (6.81) .255 (6.48) AIK Collector \ AIK Emitter Rha cd ba cd ba tt la 790 (20.07) AIK Ne Collector 779 (19.77 ) AIK Emitter .045 (1.14) .150 (3.81) .305 Typ. | [7.030 (.76) -130 (3.30) (7.75) Typ. batathat ata H | LT 435 (3.43) actyp. HHH HHH HHH: a7 115 (2.92) Typ, ~ ody (4.02) oo el ri Bag Van 030.78) xj an 20). 018 (.46) -100 (2.54) Typ. B03 {30} DESCRIPTION The ILD/Q620 and ILD/Q620GB are multi-channel input phototran-sistor optocouplers that use inverse parallel GaAs IRLED emitters and high gain NPN silicon phototransistors per channel. These devices are constructed using over/under leadframe optical coupling and double molded insulation resulting in a Withstand Test Voltage of 7500 VACpgax. The LED parameters and the linear CTR characteristics combined with the TRIOS field-effect process make these devices well suited for AC voltage detection. The ILD/Q620GB with its low IF guaranteed CTRogga minimizes power dissipation of the AC voltage detection network that is placed in series with the LEDs. Eliminating the phototransistor base connection pro- vides added electrical noise immunity from the transients found in many industrial control environments.Characteristics Symbol | Min. Typ. | Max. | Unit | Condition Emitter Forward Voltage Ve 1 1.15 1.3 Vv |p=+10 mA Forward Current Ip 2.5 20 HA Vp=t0.7 V Capacitance Co 25 pF Vp=0 V, f=1 MHz Thermal Resistance, Junction to Lead Rr 750 C/W Detector Capacitance Coe 6.8 pF Vog=5 V, fe 1 MHz Collector-Emitter Leakage Current IcEO 10 100 nA Vop=24 V Collector-Emitter Leakage Current IcEO 2 50 HA Ta=85C, Vop=24 V Thermal Resistance, Junction to Lead Rr 500 C/W Package Transfer Characteristics Channel/Channel CTR Match CTRX/CTRY 1to1 3 to 1 lp=+5 mA, Vep=5 V CTR Symmetry IcE(RATIO) 0.5 2 log(I-=-5 mA)/I-{=+5 mA) Off-State Collector Current ICE(OFF) 1 10 HA Vp=t0.7 V, Vop=24 V ILD/Q620 Saturated Current Transfer Ratio CTRegsat 60 % lp=t1 mA, Vop=0.4 V Current Transfer Ratio CTRee 50 80 600 % lp=t5 mA, Vop=5 V Collector-Emitter Saturation Voltage VoeEsat 0.4 Vv |-=+8 mA, Icp=2.4 mA ILD/Q620GB Saturated Current Transfer Ratio CTReesat 30 % lp=t1 mA, Voe=0.4 V Current Transfer Ratio (Collector-Emitter) CTRee 100 200 600 % lp=t5 mA, Vop=5 V Collector-Emitter Saturation Voltage Veesat 0.4 Vv lp=t1 mA, Iop=0.2 mA Isolation and Insulation Common Mode Rejection, Output High CMH 5000 Vius Vom=50 Vp.p, Rp=1 kQ, l-=O mA Common Mode Rejection, Output Low CML 5000 Vius Vom=50 Vp.p, Rp=1 kQ, lp=10mA Common Mode Coupling Capacitance Com 0.01 pF Package Capacitance Ccl-O 0.8 pF Vi.c9=0 V, f=1 MHz Insulation Resistance Rg 10'2 Q V).9=500 V Channel to Channel Insulation 500 VAC Switching Times Figure 1. Non-saturated switching timing I=10 mA Vece5 V F=10 KHz, R_=75 Q DF=50% Figure 2. Saturated switching timing F=10 KHz, _ DF=50% Voo=5 V RL 2 Vo [=10 mA Figure 3. Non-saturated switching timing lr 4 Vp - | >) fey r be tpy- 50% tp tr ILD/Q620/GBFigure 4. Saturated switching timing lF4 +| tp t Vo R _ ) tPLH \ VTH=1-5/V et tp tse tp Characteristic Symbol Typ. Unit Test Condition On Time Ton 3.0 us l-=+10 mA Rise Time tr 20 us Vec=5 V Off Time tore 2.3 us R.=75 Q 50% of Vpp Fall Time te 2.0 us Propagation H-L tee 1.1 us Propagation L-H teLH 2.5 us Characteristic Symbol Typ. Unit Test Condition On Time Ton 4.3 us lp=+10 mA Rise Time tr 28 us Voc=5 V Off Time tore 25 us Rat Q VyyH=1.5 V Fall Time te 14 us mH Propagation H-L teu 26 us Propagation L-H tery 7.2 us Figure 5. 60 40 20 -1.5 IF - LED Forward Current -mA -1.0 VF -LED Forward Voltage - V -0.5 0.0 0.5 1.0 LED forward current versus forward voltage 1.5 Figure 6. Collector-emitter leakage versus temperature 5 nA 10 104 103 10 10! 10 1071 107 Iceo - Collector-Emitter - -20 0 20 40 60 80 100 Ta- Ambient Temperature - C Figure 7. Maximum LED current versus ambient temperature 120 < E L 1 100 = L 2 5 80 oO = Q 60 NJ E r TJ (MAX)=100C \ 3 40 XN EF \ & 20 = L LL 0 1 1 1 1 1 1 1 1 ~ --60 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C Figure 8. Maximum LED power dissipation 200 - = L E 150F 5 L = L c L 5, 1005 N mm L \ a) L 2 50 E a o L 0 L 1 1 1 1 1 1 1 1 -60 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C Figure 9. Collector current versus diode forward current = Qo S a Oo yn go mn oO I> Normalized Collector Current on oo oO ua Normalized |to |-=10 mA Vop=5 V Ty=25C Vz iL V ILD/Q620GB ILD/Q620 a 5 10 20 Forward Current-I, (mA) ILD/Q620/GBFigure 10. Normalization factor for non-saturated and saturated CTR T,=50C versus if CTRNF - Normalized CTR Factor Figure 11. Normalization factor for non-saturated and saturated CTR T,=70C versus if CTRNF - Normalized CTR Factor 2.0 r Normalized to: r Vee = 10V, IF = 5mA, Ta = 25C 1.5 Preven CTRee(sat) Vee = 0.4V rT NCTRce 1.0 os r a 0.5 r Ta =50C 0.0 ba bo po 10 IF - LED Current - mA 100 2.0 Normalized to: Vce = 10V, IF = 5mA, Ta = 25C i 1.5 fr" CTRee(sat) Vee = 0.4V NCTRce 1.0 0.5 Zo ~ Ta = 70C 0.0 Ad 1 10 100 IF - LED Current -mA Figure 13. Peak LED current versus peak duration, Tau 1 If(pk) - Peak LED Current - mA 0000 a> Se Duty Factor | 005 1000 fm a 02 CSA, 100 B tices a 10 5 and 3 ane 7 0 108 40 104 10% 102 10! 140 t- LED Pulse Duration -s Figure 14. Maximum detector power dissipation 200 - Detector Power - mW DET P 150 \ 100 \ 50 N \ 0 -60 -40 = -20 Ta - Ambient Temperature - C 0 20 40 60 80 100 Figure 15. Maximum collector current versus collector Figure 12. Normalization factor for non-saturated and voltage saturated CTR T,=100C versus if 4000 2.0 Normalized to: 5 Vee = 10V, IF = 5mA, Ta = 25C 100 8 f mb 1.5 f CTRee(sat) Vee = 0.4V w rr S 5 = -] 5 NCTRee 6 19 1.0 5 S 9 E 2 6 a 1 Z 05 9 LL Oo NCTRce(sat) o i S z 3 2 fc Ta = 100C 4 00 4 1 10 100 a 1 10 100 Vce - Collector-Emitter Voltage - V IF - LED Current -mA ILD/Q620/GB 5-4