SQ2361ES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) power MOSFET -60 RDS(on) () at VGS = -10 V 0.177 RDS(on) () at VGS = -4.5 V 0.246 ID (A) * AEC-Q101 qualified * 100 % Rg and UIS tested * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 -2.8 Configuration Single SOT-23 (TO-236) S D 3 G 2 S 1 G Top View D P-Channel MOSFET Marking Code: 9Dxxx ORDERING INFROMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2361ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS 20 Continuous Drain Current TC = 25 C TC = 125 C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range ID V -2.8 -1.6 IS -2.5 IDM -11 IAS -12.5 EAS 7.8 PD UNIT 2 0.67 A mJ W TJ, Tstg -55 to +175 C SYMBOL LIMIT UNIT RthJA 175 RthJF 75 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b C/W Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). S15-1208-Rev. A, 21-May-15 Document Number: 66894 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361ES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic VDS VGS = 0 V, ID = -250 A -60 - - VGS(th) VDS = VGS, ID = -250 A -1.5 - -2.5 VDS = 0 V, VGS = 20 V IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = -60 V - - -1 VGS = 0 V VDS = -60 V, TJ = 125 C - - -50 VGS = 0 V VDS = -60 V, TJ = 175 C - - -150 VGS = -10 V VDS -5 V -10 - - VGS = -10 V ID = -2.4 A - 0.130 0.177 VGS = -10 V ID = -2.4 A, TJ = 125 C - - 0.310 VGS = -10 V ID = -2.4 A, TJ = 175 C - - 0.320 VGS = -4.5 V ID = -1.8 A - 0.205 0.246 - 5 - - 380 550 - 50 75 VDS = -10 V, ID = -2 A V nA A A S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 30 42 Total Gate Charge c Qg - 9 12 - 1.6 - Gate-Source Gate-Drain Charge c Charge c VGS = -10 V VDS = -30 V, f = 1 MHz VDS = -30 V, ID = -6 A Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(off) nC - 3.3 - f = 1 MHz 3.1 4.1 5.2 - 8 11 VDD = -30 V, RL = 20 ID -1.5 A, VGEN = -10 V, Rg = 1 - 9 12 - 22 26 - 4 6 - - -11 A - -0.9 -1.2 V td(on) tr pF tf ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -1.5 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1208-Rev. A, 21-May-15 Document Number: 66894 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 12 10 VGS = 10 V thru 5 V 8 ID - Drain Current (A) ID - Drain Current (A) 9 6 VGS = 4 V 6 4 TC = 25 C 3 2 TC = 125 C VGS = 3 V TC = -55 C VGS = 2 V 0 0 1 2 3 4 0 0 5 2 VDS - Drain-to-Source Voltage (V) 6 8 10 Transfer Characteristics Output Characteristics 2.0 RDS(on) - On-Resistance (Normalized) 10 gfs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) 8 TC = 25 C TC = -55 C 6 TC = 125 C 4 2 ID = 1.7 A 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 0 0 1 2 3 4 ID - Drain Current (A) 5 - 50 - 25 6 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature Transconductance 0.5 2.0 RDS(on) - On-Resistance (Normalized) RDS(on) - On-Resistance () ID = 1.9 A 0.4 0.3 VGS = 4.5 V 0.2 VGS = 10 V 0.1 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 0 0 2 4 6 ID - Drain Current (A) 8 On-Resistance vs. Drain Current S15-1208-Rev. A, 21-May-15 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature Document Number: 66894 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361ES www.vishay.com Vishay Siliconix 800 10 600 1 IS - Source Current (A) C - Capacitance (pF) TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Ciss 400 TJ = 150 C 0.1 TJ = 25 C 0.01 200 Coss Crss 0.001 0 0 10 20 30 40 50 0.0 60 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source-Drain Diode Forward Voltage Capacitance 1.0 10 0.7 8 ID = 250 A VGS(th) - Variance (V) VGS - Gate-to-Source Voltage (V) ID = 6 A VDS = 30 V 6 4 0.4 ID = 5 mA 0.1 - 0.2 2 - 0.5 - 50 - 25 0 0 2 4 6 8 Qg - Total Gate Charge (nC) 10 0 75 100 125 150 175 Threshold Voltage 0.25 1.0 ID = 1.9 A ID = 1.7 A 0.20 0.8 RDS(on) - Resistance () RDS(on) - On-Resistance () 50 TJ - Temperature (C) Gate Charge 0.6 0.4 TJ = 150 C 0.15 0.10 TJ = 150 C 0.05 0.2 TJ = 25 C 0 25 TJ = 25 C 0.00 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage S15-1208-Rev. A, 21-May-15 10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-Source Voltage Document Number: 66894 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 100 -55 IDM Limited -59 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) ID = 1 mA -63 -67 Limited by RDS(on)* 100 s 1 ms 1 10 ms 100 ms 0.1 -71 1s 10 s DC BVDSS Limited TC = 25 C Single Pulse -75 -50 -25 0 25 50 75 100 125 150 0.01 0.01 175 TJ - Junction Temperature (C) 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain-Source Breakdown vs. Junction Temperature Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 175 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1208-Rev. A, 21-May-15 Document Number: 66894 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66894. S15-1208-Rev. A, 21-May-15 Document Number: 66894 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3 0.055 0.0374 Ref 0.020 Ref 8 3 8 ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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