SQ2361ES
www.vishay.com Vishay Siliconix
S15-1208-Rev. A, 21-May-15 1Document Number: 66894
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
Marking Code: 9Dxxx
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) -60
RDS(on) () at VGS = -10 V 0.177
RDS(on) () at VGS = -4.5 V 0.246
ID (A) -2.8
Configuration Single
P-Channel MOSFET
S
D
G
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
ORDERING INFROMATION
Package SOT-23
Lead (Pb)-free and Halogen-free SQ2361ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
-2.8
A
TC = 125 °C -1.6
Continuous Source Current (Diode Conduction) IS-2.5
Pulsed Drain Current aIDM -11
Single Pulse Avalanche Current L = 0.1 mH IAS -12.5
Single Pulse Avalanche Energy EAS 7.8 mJ
Maximum Power Dissipation aTC = 25 °C PD
2W
TC = 125 °C 0.67
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount b RthJA 175 °C/W
Junction-to-Foot (Drain) RthJF 75
SQ2361ES
www.vishay.com Vishay Siliconix
S15-1208-Rev. A, 21-May-15 2Document Number: 66894
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -60 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 - -2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = -60 V - - -1
μA VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150
On-State Drain Current a I
D(on) V
GS = -10 V VDS -5 V -10 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = -10 V ID = -2.4 A - 0.130 0.177
VGS = -10 V ID = -2.4 A, TJ = 125 °C - - 0.310
VGS = -10 V ID = -2.4 A, TJ = 175 °C - - 0.320
VGS = -4.5 V ID = -1.8 A - 0.205 0.246
Forward Transconductance b gfs VDS = -10 V, ID = -2 A - 5 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = -30 V, f = 1 MHz
- 380 550
pF Output Capacitance Coss -5075
Reverse Transfer Capacitance Crss -3042
Total Gate Charge c Qg
VGS = -10 V VDS = -30 V, ID = -6 A
-912
nC Gate-Source Charge c Qgs -1.6-
Gate-Drain Charge c Qgd -3.3-
Gate Resistance Rg f = 1 MHz 3.1 4.1 5.2
Turn-On Delay Time ctd(on)
VDD = -30 V, RL = 20
ID -1.5 A, VGEN = -10 V, Rg = 1
-811
ns
Rise Time c tr -912
Turn-Off Delay Time c td(off) -2226
Fall Time c tf -46
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM ---11A
Forward Voltage VSD IF = -1.5 A, VGS = 0 V - -0.9 -1.2 V
SQ2361ES
www.vishay.com Vishay Siliconix
S15-1208-Rev. A, 21-May-15 3Document Number: 66894
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
On-Resistance vs. Drain Current
Transfer Characteristics
On-Resistance vs. Junction Temperature
On-Resistance vs. Junction Temperature
I
D
- Drain Current (A)
0
3
6
9
12
012345
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 5 V
VGS = 3 V
VGS = 4 V
VGS = 2 V
0
2
4
6
8
10
0123456
gfs - Transconductance (S)
ID - Drain Current (A)
TC = 125 °C
TC = -55 °CTC = 25 °C
0
0.1
0.2
0.3
0.4
0.5
0246810
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
2
4
6
8
10
0246810
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = -55 °C
TC = 125 °C
TC = 25 °C
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
ID = 1.7 A
VGS = 4.5 V
VGS = 10 V
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150 175
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
ID = 1.9 A
VGS = 4.5 V
VGS = 10 V
SQ2361ES
www.vishay.com Vishay Siliconix
S15-1208-Rev. A, 21-May-15 4Document Number: 66894
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Capacitance
Gate Charge
On-Resistance vs. Gate-Source Voltage
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-Source Voltage
0
200
400
600
800
0 102030405060
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0
2
4
6
8
10
0246810
VGS -Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
ID= 6 A
VDS= 30 V
0
0.2
0.4
0.6
0.8
1.0
0246810
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ = 150 °C
TJ = 25 °C
ID = 1.7 A
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
- 0.5
- 0.2
0.1
0.4
0.7
1.0
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) - Variance (V)
TJ - Temperature (°C)
ID = 250 μA
ID = 5 mA
0.00
0.05
0.10
0.15
0.20
0.25
0246810
RDS(on) - Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ = 150 °C
TJ = 25 °C
ID = 1.9 A
SQ2361ES
www.vishay.com Vishay Siliconix
S15-1208-Rev. A, 21-May-15 5Document Number: 66894
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Drain-Source Breakdown vs. Junction Temperature Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
-75
-71
-67
-63
-59
-55
-50 -25 0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
ID = 1 mA
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
100 ms
Limited by RDS(on)*
1 ms
IDM Limited
TC= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s
10 s
DC
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 175 °C/W
3. T
JM
- TA = PDMZthJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
SQ2361ES
www.vishay.com Vishay Siliconix
S15-1208-Rev. A, 21-May-15 6Document Number: 66894
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66894.
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilam
r
oN
ecnade
p
mI
la
m
r
e
hT
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
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Revision: 01-Jan-2019 1Document Number: 91000
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