PD-97288 RevC
IRAM136-3063B
Series
30A, 600V
Integrated Power Hybrid IC for
Hi
g
h Volta
g
e Motor A
pp
lications with Internal Shunt Resistor
Description
International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry
benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-
in temperature monitor and over-current and over-temperature protections, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe
operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along
with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
Features
• Integrated Gate Drivers
• Temperature Monitor and Protection
• Overcurrent shutdown
• Low VCE(on) Advance Planar Super Rugged Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power up to 3.3kW / 85~253 Vdc
• Fully Isolated Package, Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter Description Value Units
V
CES
/ V
RRM
IGBT/Diode Blocking Voltage 600
V
+
Positive Bus Input Voltage 450
I
O
@ T
C
=25°C Maximum Output Current 30
I
O
@ T
C
=100°C RMS Phase Current (Note 1) 15
I
O
Pulsed RMS Phase Current (Note 2) 50
F
PWM
PWM Carrier Frequency 20 kHz
P
D
Power dissipation per IGBT @ T
C
=25°C 73 W
V
ISO
Isolation Voltage (1min) 2000 V
RMS
T
J
(IGBT & Diode & IC) Maximum Operating Junction Temperature +150
T
C
Operating Case Temperature Range -20 to +100
T
STG
Storage Temperature Range -40 to +125
T Mounting torque Range (M4 screw) 0.7 to 1.17 Nm
Note 1: Sinusoidal Modulation at V
+
=400V, T
J
=150°C, F
PWM
=6kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms; T
C
=25°C; F
PWM
=6kHz. Limited by I
BUS-ITRIP
, see Table "Inverter Section Electrical Characteristics"
V
A
°C
www.irf.com 1
IRAM136-3063B
Internal Electrical Schematic – IRAM136-3063B
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
V- (12)
VB1 (1)
U, VS1 (2)
VB2 (4)
V, VS2 (5)
VB3 (7)
W, VS3 (8)
VDD (21)
VSS (22)
R9
R8
R1 R3 R5
Driver IC
LO1 16
LO3 14
LO2 15
R2
R4
R6
ISENSE (20)
V (10)
+
C6
C5
FAULT(19)
HIN1 (13)
HIN2 (14)
HIN3 (15)
LIN1 (16)
LIN2 (17)
LIN3 (18) THERMISTOR
R7R13
R12
R14
R11
C1
C2
C3
C4
C7
POSISTOR
RS
R15
2 www.irf.com
IRAM136-3063B
Absolute Maximum Ratings (Continued)
Symbol Parameter Min Max Units Conditions
IBDF
Bootstrap Diode Peak Forward
Current --- 4.5 A tP= 10ms,
TJ = 150°C, TC=100°C
PBR Peak
Bootstrap Resistor Peak Power
(Single Pulse) --- 25.0 W tP=100μs, TC =100°C
VS1,2,3
High side floating supply offset
voltage VB1,2,3 - 25 VB1,2,3 +0.3 V
VB1,2,3 High side floating supply voltage -0.3 600 V
VCC
Low Side and logic fixed supply
voltage -0.3 20 V
VIN Input voltage LIN, HIN, ITrip -0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
Inverter Section Electrical Characteristics @T
J
= 25°C
Symbol Parameter Min Typ Max Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V VIN=5V, IC=500μA
V(BR)CES / T Temperature Coeff. Of
Breakdown Voltage --- 0.5 --- V/°C VIN=5V, IC=1.0mA
(25°C - 150°C)
--- 1.90 2.7 IC=15A, VCC=15V
--- 2.10 2.8 IC=15A, VCC=15V, TJ=125°C
--- 5 150 VIN=5V, V+=600V
--- 80 --- VIN=5V, V+=600V, TJ=125°C
--- 1.6 2.5 IC=15A
--- 1.5 2.2 IC=15A, TJ=125°C
-- -- 1.25 IF=1A
--- --- 1.10 IF=1A, TJ=125°C
RBR Bootstrap Resistor Value --- 22 --- TJ=25°C
RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C
IBUS_TRIP
Current Protection Threshold
(positive going) 44 --- 58 A tON > 175μs
VCE(ON)
Collector-to-Emitter Saturation
Voltage V
V
ICES
Zero Gate Voltage Collector
Current A
VBDFM
Bootstrap Diode Forward Voltage
Drop V
VFM Diode Forward Voltage Drop
www.irf.com 3
IRAM136-3063B
Inverter Section Switching Characteristics @ T
J
= 25°C
Symbol Parameter Min Typ Max Units Conditions
E
ON
Turn-On Switching Loss --- 550 870
E
OFF
Turn-Off Switching Loss --- 240 300
E
TOT
Total Switching Loss --- 790 1170
E
REC
Diode Reverse Recovery energy --- 65 125
t
RR
Diode Reverse Recovery time --- 50 --- ns
E
ON
Turn-On Switching Loss --- 830 1180
E
OFF
Turn-off Switching Loss --- 400 550
E
TOT
Total Switching Loss --- 1230 1730
E
REC
Diode Reverse Recovery energy --- 120 205
t
RR
Diode Reverse Recovery time --- 140 --- ns
Q
G
Turn-On IGBT Gate Charge --- 72 108 nC I
C
=20A, V
+
=400V, V
GE
=15V
RBSOA Reverse Bias Safe Operating Area
T
J
=150°C, I
C
=60A, V
P
=600V
V
+
= 480V
V
CC
=+15V to 0V See CT3
SCSOA Short Circuit Safe Operating Area 10 --- --- μs
T
J
=150°C, V
P
=600V,
V
+
= 500V,
V
CC
=+15V to 0V See CT2
FULL SQUARE
μJ
μJ
I
C
=15A, V
+
=400V
V
CC
=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
I
C
=15A, V
+
=400V
V
CC
=15V, L=2mH, T
J
=125°C
Energy losses include "tail" and
diode reverse recovery
See CT1
Recommended Operating Conditions Driver Function
Symbol Definition Min Typ Max Units
V
B1,2,3
High side floating supply voltage V
S
+12 V
S
+15 V
S
+20
V
S1,2,3
High side floating supply offset voltage Note 4 --- 400
V
CC
Low side and logic fixed supply voltage 12 15 20
V
T/ITRIP
T/I
TRIP
input voltage V
SS
--- V
SS
+5
V
IN
Logic input voltage LIN, HIN V
SS
--- V
SS
+5 V
HIN High side PWM pulse width 1 --- --- μs
Deadtime External dead time between HIN and LIN 2 --- --- μs
Note 3: For more details, see IR21363 data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at
15V differential
V
V
Note 4: Logic operational for V
s
from COM-5V to COM+600V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
4 www.irf.com
IRAM136-3063B
Static Electrical Characteristics Driver Function
Symbol Definition Min Typ Max Units
V
IH
Logic "0" input voltage 3.0 --- --- V
V
IL
Logic "1" input voltage --- --- 0.8 V
V
CCUV+,
V
BSUV+
V
CC
and V
BS
supply undervoltage positive going threshold 10.6 11.1 11.6 V
V
CCUV-,
V
BSUV-
V
CC
and V
BS
supply undervoltage negative going threshold 10.4 10.9 11.4 V
V
CCUVH,
V
BSUVH
V
CC
and V
BS
supply undervoltage lock-out hysteresis --- 0.2 --- V
V
IN,Clamp
Input Clamp Voltage (HIN, LIN, T/I
TRIP
) I
IN
=10μA 4.9 5.2 5.5 V
I
QBS
Quiescent V
BS
supply current V
IN
=0V --- --- 165 μA
I
QCC
Quiescent V
CC
supply current V
IN
=0V --- --- 3.35 mA
I
LK
Offset Supply Leakage Current --- --- 60 μA
I
IN+
Input bias current V
IN
=5V --- 200 300 μA
I
IN-
Input bias current V
IN
=0V --- 100 220 μA
I
TRIP+
I
TRIP
bias current V
ITRIP
=5V --- 30 100 μA
I
TRIP-
I
TRIP
bias current V
ITRIP
=0V --- 0 1 μA
V(I
TRIP
)I
TRIP
threshold Voltage 440 490 540 mV
V(I
TRIP
,HYS) I
TRIP
Input Hysteresis --- 70 --- mV
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM/I
TRIP
and are
applicable to all six channels. (Note 3)
Dynamic Electrical Characteristics
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig.11) --- 600 --- ns
T
OFF
Input to Output propagation turn-
off delay time (see fig. 11) --- 700 --- ns
T
FLIN
Input Filter time (HIN, LIN) 100 200 --- ns V
IN
=0 & V
IN
=5V
T
BLT-Trip
I
TRIP
Blancking Time 100 150 ns V
IN
=0 & V
IN
=5V
D
T
Dead Time (V
BS
=V
DD
=15V) 220 290 360 ns V
BS
=V
CC
=15V
M
T
Matching Propagation Delay Time
(On & Off) --- 40 75 ns V
CC
= V
BS
= 15V, external dead
time> 400ns
T
ITrip
I
Trip
to six switch to turn-off
propagation delay (see fig. 2) --- --- 3.75 μs V
CC
=V
BS
= 15V, I
C
=15A, V
+
=400V
--- 34 --- T
C
= 25°C
--- 29 --- T
C
= 100°C
Post I
Trip
to six switch to turn-off
clear time (see fig. 2)
Driver only timing unless otherwise specified.)
T
FLT-CLR
ms
V
CC
=V
BS
= 15V, I
C
=15A, V
+
=400V
www.irf.com 5
IRAM136-3063B
Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C) Thermal resistance, per IGBT --- 1.5 1.7
Rth(J-C) Thermal resistance, per Diode --- 2.5 ---
Rth(C-S) Thermal resistance, C-S --- 0.1 ---
CDCreepage Distance 3.5 --- --- mm See outline Drawings
°C/W
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
RShunt Resistance 9.4 9.6 9.8 m TC = 25°C
TCoeff Temperature Coefficient 0 --- 200 ppm/°C
PShunt Power Dissipation --- --- 4.5 W -40°C < TC < 100°C
TRange Temperature Range -20 --- 125 °C
Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R25 Resistance 97 100 103 k TC = 25°C
R125 Resistance 2.25 2.52 2.8 k TC = 125°C
B B-constant (25-50°C) 4165 4250 4335 k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1 --- mW/°C TC = 25°C
Input-Output Logic Level Table
ITRIP U,V,W
001
V+
0100
011X
1XXX
Ho
Lo
U,V,W
IC
Driver
V+
Hin1,2,3
Lin1,2,3
(13,14,15)
(16,17,18)
(2,5,8)
HIN1,2,3 LIN1,2,3
6 www.irf.com
IRAM136-3063B
Figure 1. Input/Output Timing Diagram
ITRIP
LIN1,2,3
HIN1,2,3
TFLT-CLR
50%
50%
U,V,W
50%
TITRIP
50%
Figure 2. ITRIP Timing Waveform
Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
www.irf.com 7
IRAM136-3063B
Module Pin-Out Description
Pin Name Description
1VB1 High Side Floating Supply Voltage 1
2U, VS1 Output 1 - High Side Floating Supply Offset Voltage
3NAnone
4VB2 High Side Floating Supply voltage 2
5V,VS2 Output 2 - High Side Floating Supply Offset Voltage
6NAnone
7VB3 High Side Floating Supply voltage 3
8W,VS3 Output 3 - High Side Floating Supply Offset Voltage
9NAnone
10 V+Positive Bus Input Voltage
11 NA none
12 V- Negative Bus Input Voltage
13 HIN1 Logic Input High Side Gate Driver - Phase 1
14 HIN2 Logic Input High Side Gate Driver - Phase 2
15 HIN3 Logic Input High Side Gate Driver - Phase 3
16 LIN1 Logic Input Low Side Gate Driver - Phase 1
17 LIN2 Logic Input Low Side Gate Driver - Phase 2
18 LIN3 Logic Input Low Side Gate Driver - Phase 3
19 Fault/TMON Temperature Monitor and Fault Function
20 ISense Current Monitor
21 VCC +15V Main Supply
22 VSS Negative Main Supply
8 www.irf.com
IRAM136-3063B
Typical Application Connection IRAM136-3063B
122
HIN3
HIN2
LIN1
LIN2
LIN3
HIN1
Date Code Lot #
IRAM136-3063B
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
U
V
W
Vcc (15 V)
ITRIP
VSS
CONTROLLER
V+
DC BUS
CAPACITORS
10m
0.1m
FLT/TMON
12kohm
+5V
+15V
V-
VB1
VB2
VB3
+5V
IMonitor
Fault & Temp
Monitor
V+
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional
high frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value
must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see
maximum ratings Table on page 3).
4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
6. Fault/TMON Monitor pin must be pulled-up to +5V.
www.irf.com 9
IRAM136-3063B
0
2
4
6
8
10
12
14
16
18
20
22
0 2 4 6 8 10121416182
PWM Sw itching Fre quency - kHz
Maximum Output Phase RMS Current - A
0
T
C
= 80º
C
T
C
= 90º
C
T
C
= 100º
C
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
0
2
4
6
8
10
12
14
16
18
1 10 100
Modulation Frequency - Hz
Maximum Output Phase RMS Current - A
F
PWM
= 6kHz
F
PWM
= 9kHz
F
PWM
= 12kHz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=100°C, Modulation Depth=0.8, PF=0.6
10 www.irf.com
IRAM136-3063B
0
50
100
150
200
250
300
350
0 2 4 6 8 10121416182
PWM Sw itching Fre quency - kHz
Total Power Loss- W
0
I
OUT
= 18A
I
OUT
= 15A
I
OUT
= 12A
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
0
50
100
150
200
250
300
350
02468101214161820222
Output Phase Current - A
RMS
Total Power Loss - W
4
F
PWM
= 12kHz
F
PWM
= 9kHz
F
PWM
= 6kHz
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
www.irf.com 11
IRAM136-3063B
0
20
40
60
80
100
120
140
160
02468101214161820222
Output Phase Current - A
RMS
Max Allowable Case Temperature - ºC
4
F
PWM
= 6kHz
F
PWM
= 9kHz
F
PWM
= 12kHz
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
98.3
100
110
120
130
140
150
160
65 70 75 80 85 90 95 100 105
Internal Therm istor Tem perature Equivalent Read Out - °C
IGBT Junction Temperature - °C
Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=15Arms, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6
12 www.irf.com
IRAM136-3063B
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Thermistor Temperature - °C
Thermistor Pin Read-Out Voltage - V
Min
Avg.
Max
TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM
°C °C °C
- 40 4 397119 2 5 1 00000 9 0 7481
- 35 3 088599 3 0 79222 9 5 6337
- 30 2 197225 3 5 63167 10 0 5384
- 25 1 581881 4 0 50677 10 5 4594
- 20 1 151037 4 5 40904 11 0 3934
- 15 8 46579 5 0 33195 11 5 3380
- 10 6 28988 5 5 27091 12 0 2916
- 5 4 71632 6 0 22224 12 5 2522
0 3 57012 6 5 18322 13 0 2190
5 2 72500 7 0 15184 13 5 1907
10 2 09710 7 5 12635 14 0 1665
15 1 62651 8 0 10566 14 5 1459
20 1 27080 8 5 8873 15 0 1282
+5V
EXTR
V
Therm
RTherm
Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
0 5 10 15 20
PWM Frequency - kHz
Recommended Bootstrap Capacitor -F
15
F
4.7
F
10F
6.8
F
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
www.irf.com 13
IRAM136-3063B
Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
Figure 11c. Diode Reverse Recovery.
14 www.irf.com
IRAM136-3063B
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
V+
Figure CT1. Switching Loss Circuit
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
Io
V+
IN
IO
Figure CT2. S.C.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
Hin1,2,3
Io
Lin1,2,3
V+
IN
IO
Figure CT3. R.B.SOA Circuit
www.irf.com 15
IRAM136-3063B
Package Outline IRAM136-3063B
note2
Missing Pin : 3,6,9,11
IRAM136-3063B
Ԙ

P 4KB00
Ԛ
ԙ
note3 note4
note5
note1: Unit Tolerance is +0.5mm,
䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
16 www.irf.com
IRAM136-3063B
Package Outline IRAM136-3063B2

ԙ
IRAM136-3023B
Ԙ
P 4DB00
Ԛ
note2
note3 note4
Missing Pin : 3,6,9,11
note5
note1: Unit Tolerance is +0.5mm,
䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
2011-06-14
www.irf.com 17