LE | (yj 12:74 Revo FEATURES High Breakdown Voltage LVcco.---50V (BCITD Available in Different Current Gain Groupings Low Noise N.F..... AdB max (! O.2mA (BCI73) THERMAL CHARACTERISTICS BC 171 - BC 172 + BC 173 NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR APPLICATIONS = Audio Amplifier Driver Stage = Television Receiver Circuits # Low Noise Pre-Amplifier Thermal Resistance from Junction to Ambient 0 (j-amb) Maximum Collector Junction Temperature Storage Temperature Range = Low Power General Purpose (BC173) 0.42C/mW 150C ~ 65C to +150C ee MECHANICAL OUTLINE u-135 (Lead Code A) (TO-92 Variant) Soldering Temperature (10 sec. time limit ) 260C ABSOLUTE MAXIMUM RATINGS BC I7I BC 172 BC 173 Continuous Power Dissipation @ 25C Ambient 300 mW 300 mW 300 mW Continuous Collector Current 100 mA 100 mA 100 mA Collecto: - Base Voltage 50 V 25V 25V Collector - Emitter Voltage 45V 25V 25V Base - Emitter Voltage 6NV 5v 5V ss omensions men ELECTRICAL CHARACTESISTICS @ 25C free air temperature: Le meee BC 171 BC 172 BC 173 PARAMETER SYMBOL UNIT MIN. MAX.;MIN. MAX.) MIN. = MAX. TEST CONDITIONS Collector-Base Cutoff Current logo 15 nA Ven = 45V Collector-Base Cutoff Current IcBo 15 15 nA Vee = 20V Collector - Emitter Saturation Voltage | Vcg(sat) 0.25 0.25 0.25 Vv lc = tOmA Ip = O.5mA Collector - Emitter Saturation Voltage | Vcg(sat) 0.6 0.6 0.6 Vv le = 100mA Ip = 5mA Base - Emitter On Voitage Voc (sat) | 0.55 0.7 | 0.55 0.7 | 6.55 0.7 v Vee:: 5V le = 2mA Forward Current Transfer Ratio hee 110 450 | 110 800 | 110 800 Vee: 5V le = 2mA Small Signal Current Gain hle 5 L5 15 f = 100MHz Ic = 1OmA Vee= 5V Collector Output Capacitance Cob 6 6 6 pF | Vee= 10V fo = IMHz le = O Noise Figure (Narrow Band) N.F. 10 10 4 dB Ver = 5V lo = .2mA Rg = 2Ka Fo= IKC BW = 200Hz Noise Figure (Wide Band) N.F. 4 dB Vece=: 5V le = O.2mA Rg = 2K f=30Hz to I5KHz *D. C. CURRENT GAIN GROUPINGS ~ TYPE BC171A | BC172B BC172C | BC171A | BC171B BC1738B BC173C BC172A BC 172B BC172C BC173A BC173B BC173C TEST CONDITIONS MIN. MAX. | MIN. MAX. | MIN. MAX. | MIN. MAX. | MIN. MAX. | MIN. MAX. Vee= 5V le = 0.01mA 40 40 100 Vee= 5V lc = 2mA 110 220 200 450 420 800 TYPICAL TWO PORT CHARACTERISTICS (h parameters) ae TYPE BC171A BC171B a BC172A BC 1728 BC172C UNIT TEST CONDITIONS PARAMETERS BC173A BC 1738 BC173C hfe 180 300 600 Vee=5V le = 2mA_ F = IKHz hie 25 4 8 Kohm hre 3 x 10* 6 x 10% 8 x 10% hoe 20 26 50 aus 43510 69477 34301381-5 a See, edt rheS Tan TRANSISTOR . a >< Pd os SILICON TYPICAL ELECTRICAL CHARACTERISTICS - BC 172 - BC 173 COLLECTOR CHARACTERISTICS ' BC 171 BASE CHARACTERISTICS COLLECTOR CHARACTERISTICS | 20--- 16 vat NJ LNZYIND YOLDITIOD 71 g 2 x oS v4 NI LNIND YOLDITIOD ~ 71 vueNI LNRND YOIDITIOD 7 s 12- Be 4 ol 10 BASE EMITTER VOLTAGE IN VOLT Vag - Vee - COLLECTOR EMITTER VOLTAGE IN VOLTS EMITTER VOLTAGE iN VOLTS COLLECTOR COLLECTOR CURRENT D.C. CURRENT GAIN VERSUS NIV LN38IND D'd ~ 344 1000 100 BASE-EMITTER SATURATION VOLTAGE 7 2 x 2 : ad 3 o oe Ss SLIOA NI 3OVLIOA NOWVYNLYS daLiiwa-aswa-Ues) 38,4 RSUS_ COLLECTOR CURRENT Vv COLLETOR- EMITTER SATURATION VOLTAGE i i i { on i a et Is a = % & = os 3 3 g S 3 SLIOA NI BOVLIOA NOILVENLYS BALLIW2 YOLDITIOD "|! 195) 7A tg ~ COLLECTOR CURRENT IN mA - COLLECTOR CURRENT IN mA fe COLLECTOR CURRENT IN mA le 100 10 o - =o = 3 yu <>) Vv ANIVA OL JAILYT2Y SDUSRLIV8VHD OUTPUT CAPACITANCE VERSUS COLLECTOR-BASE VOLTAGE dd NI SONVLIDVdvd LNdLNO ~ D RRENT Ui SMALL SIGNAL CURRENT GAIN VERSUS COLLECTOR C NIYO LINRIND TWNOIS TIVWS 724 Ig - COLLECTOR CURRENT IN mA Ves COLLECTOR BASE VOLTAGE IN VOLTS COLLECTOR CURRENT IN mA Ne Qo NOISE FIGURE VERSUS iS 20 16 2 7 ~t 2 QP Nt auNOld FSION ~ J'N 0, 07 NOISE FIGURE VERSUS COLLECTOR CURRENT 0. 0.001 aP Nt 3aNDI4d ASION ~ SN 01 COLLECTOR CURRENT 0. os mola SOURCE RESISTANCE VERSUS we 3,8 be Be wyoy NI FONVISISHY ZDINOS 84 FREQUENCY IN KHz f ig -~ COLLECTOR CURRENT IN mA le COLLECTOR CURRENT IN mA myer