VS-ETX3007THN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt(R) FEATURES Base cathode 2 * Hyper fast and soft recovery time 2 * Low forward voltage drop * 175 C maximum operating junction temperature * Low leakage current 1 * True 2 pin package 3 Anode 1 Cathode 3 * AEC-Q101 qualified 2L TO-220AC * Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see PRIMARY CHARACTERISTICS IF(AV) 30 A DESCRIPTION / APPLICATIONS VR 650 V Ultra low VF, soft-switching hyper fast rectifiers optimized for discontinuous (critical) mode (DCM) power factor correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. VF at IF at 125 C 1.6 V trr 27 ns TJ max. 175 C Package 2L TO-220AC Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 650 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 120 C 30 Non-repetitive peak surge current IFSM TC = 25 C 210 Operating junction and storage temperature TJ, TStg A -55 to +175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 650 - - IF = 30 A - 2.1 2.5 IR = 250 A IF = 30 A, TJ = 125 C - 1.6 1.7 VR = VR rated - 0.02 30 TJ = 150 C, VR = VR rated - 50 300 UNITS V A Reverse leakage current IR Junction capacitance CT VR = 200 V - 22 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Revision: 06-Apr-18 Document Number: 96066 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX3007THN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS TJ = 25 C Reverse recovery time trr MIN. TYP. MAX. - 35 - - 27 - - 88 - - 15 - - 24 - IF = 1 A dIF/dt = 100 A/s VR = 30 V ns TJ = 25 C TJ = 125 C Peak recovery current IRRM Reverse recovery charge Qrr IF = 30 A dIF/dt = 1000 A/s VR = 400 V TJ = 25 C TJ = 125 C UNITS A TJ = 25 C - 330 - TJ = 125 C - 1350 - MIN. TYP. MAX. nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Thermal resistance, junction to case RthJC - 1.0 1.3 Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Thermal resistance, case to heat sink RthCS Mounting surface, flat, smooth, and greased - - 0.5 - 0.2 - - Weight Mounting torque Maximum junction and storage temperature range TJ, TStg 100 C/W g 0.07 - oz. 6.0 (5.0) - 12 (10) kgf * cm (lbf * in) -55 - 175 C Case style: 2L TO-220AC ETX3007TH 1000 175 C 100 TJ = 175 C 10 150 C 10 IRM (A) IF - Instantaneous Forward Current (A) Marking device UNITS 1 1 0.1 25 C 0.01 TJ = 150C TJ = 25 C 0.1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 700 VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 06-Apr-18 Document Number: 96066 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX3007THN3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 700 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 80 170 RMS limit 70 160 Average Power Loss (W) Allowable Case Temperature (C) 180 150 140 130 120 110 DC 100 Square wave (D = 0.50) rated VR applied 90 80 70 60 50 40 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 30 20 10 0 0 10 20 30 40 50 0 10 20 30 40 50 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 06-Apr-18 Document Number: 96066 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX3007THN3 www.vishay.com Vishay Semiconductors 130 1400 120 1200 110 125 C 100 125 C 1000 Qrr (nC) trr (ns) 90 80 70 25 C 60 800 600 400 50 40 25 C 200 30 20 0 100 1000 100 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 06-Apr-18 Document Number: 96066 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX3007THN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T X 30 07 T H N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - E = single diode 3 - Package: T = TO-220 4 - X = hyper fast recovery 5 - Current rating (30 = 30 A) 6 - Voltage rating (07 = 650 V) 7 - T = True 2 pin TO-220 8 - H = AEC-Q101 qualified 9 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETX3007THN3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96069 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?96532 Revision: 06-Apr-18 Document Number: 96066 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A OP 0.014 M B A M E2 (7) A Thermal pad E A1 Q (6) H1 (7) (6) D H1 D2 (6) Detail B D1 1 2 (2) L1 C E1 (6) 1 2 L D C Base metal D C L1 (2) A b1, b3 (4) Section C - C and D - D View A - A A2 Plating c1 (4) c c 2 x b 2 x b2 Detail B e1 (b, b2) 0.015 M B A M SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. MAX. NOTES A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6 A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7 A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 4 4 c 0.36 0.61 0.014 0.024 c1 0.36 0.56 0.014 0.022 4 3 D 14.85 15.25 0.585 0.600 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 L1 3.32 3.82 0.131 0.150 OP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC(R) TO-220, except D2, where JEDEC(R) minimum is 0.480". Revision: 06-Dec-17 Document Number: 96069 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000