OU ETE E16 oe) Internally Matched Power GaAs FETs aOR E FEATURES * High Output Power: Py gp = 35.5dBm (Typ.) * High Gain: Gjqp = 6.0dB (Typ.) * High PAE: nad = 24% (Typ.) * Broad Band: 10.7 ~ 11.7GHz * Impedance Matched Zin/Zout = 50 * Hermetically Sealed DESCRIPTION The FLM1011-4C is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsus stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Symbol Condition Unit Drain-Source Voltage Vps 15 Vv Gate-Source Voltage Vas 5 Vv Total Power Dissipation PT Te = 25C 25 WwW Storage Temperature Tstg -65 to +175 C Channel Temperature | Tch 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vps) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.0 and -2.2 mA respectively with gate resistance of 100Q. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Symbol Test Conditions at Unit Saturated Drain Current Ipss_| Vps =5V, V@g = 0V - 1800 | 2700 mA Transconductance gm Vps = 5V, Ips =1100mA - 1000] - mS Pinch-off Voltage Vp Vos = 5V, Ips =90mA -1.0 | -2.0 | -3.5 V Gate Source Breakdown Voltage | VGSO | Ics = -90uA 5 - - Vv Output Power at 1dB G.C.P. PidB 34.5 | 35.5 - dBm : Vps =10V, Power Gain at 1dBG.C.P. GidB IDs =0.6 Ipss (Typ.), 5.0 6.0 - dB Drain Current ldsr | = 10.7 ~ 11.7 GHz, - | 1100 | 1300 mA ZS=Z,=50 oh Power-added Efficiency nada | S bron - fal - % Thermal Resistance Rth Channel to Case - 5.0 | 6.0 C/W CASE STYLE: lA G.C.P.: Gain Compression Point 1998 Microwave Databook 492 Data SheetsWOT Ee roe) a0) SY Internally Matched Power GaAs FETs POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 30 = = 24 X = 2000 GS 8 18 \ = 1500 3 \ G -0.5V > a 2 12 N 1000 S "1.0V = 6 o 6 N 500 BV \ -2.0V 0 50 100 150 200 0 2 4 6 8 10 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER DS= 0 f= 11.2 GHz -PidB ~ Vps=10V => 38 DS & & 38 ---Vps=8V SD 36 S 36 : 5 we = 34 = 34 WA a a 7 ~ 5s 32 5 32 ve 40 & Le 1 oO =] 7 ANC | aon ee sah oe Oo 6 30 6 30/4 aS 20 8 | _--=F = 10.7 109 11.1 113115 117 23 25 27 29 31 33 Input Power (dBm) Frequency (GHz) Data Sheets 493 1998 Microwave DatabookFLM1011-4C Re) Internally Matched Power GaAs FETs aOR E S-PARAMETERS Vps = 10V, IDs = 1100mA FREQUENCY S11 S21 S12 $22 (MHZ) MAG ANG MAG ANG MAG ~~ ANG MAG ANG 10500 .63 136 1.99 172 .04 14 .38 161 10700 57 117 2.26 159 .06 123 37 145 10900 .50 90 2.36 144 .07 99 35 122 11100 44 57 2.54 126 .09 79 32 93 11300 41 19 2.53 109 .09 57 31 58 11500 42 -16 2.52 87 10 38 32 24 11700 44 -44 2.18 67 10 26 34 5 11900 44 -66 1.81 58 10 12 38 -22 1998 Microwave Databook 494 Data SheetsWOT Ee re) FUJITSU Internally Matched Power GaAs FETs Case Style "IA" Metal-Ceramic Hermetic Package 0.1 | 0.004) ( OO i | 2-R 1.25+0.15 | (0.049) oR mi Rh 1.5 Min. (0.059) > 9.720.15 (0.382) <_05 A + 0.5 1.8+0.15 (0.020) 7 (0.071) 3.2 Max. (0.126 1.5 Min 0.059) >| [Ee jy, | ig so st) | | ft . ol | sig xs 13.020.15 alo Jf 4. <$@_, a 1: Gate (0.512) 2: Source (Flange) 16.50.15 3: Drain $A i (0.650) Unit: mm (Inches) Data Sheets 495 1998 Microwave Databook