P r e l i m in a r y d a t a s h e e t , B G A 6 1 4 , Ma y 2 0 0 2 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2002-05-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA614 Preliminary data sheet Revision History: 2002-05-27 Previous Version: Preliminary 2001-11-14 Page Subjects (major changes since last revision) 5 Maximum input power specified For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: mcdocu.comments@infineon.com Preliminary Silicon Germanium Broadband MMIC Amplifier BGA614 Features * Cascadable 50-gain block * 3 dB-bandwidth: DC to 2.4 GHz with 18.5 dB typical gain at 1.0 GHz * Compression point P-1dB = 12 dBm at 2.0 GHz * Noise figure F50 = 2.30 dB at 2.0 GHz * Absolute stable * 70 GHz fT - Silicon Germanium technology 3 4 2 1 VPS05605 Applications * Driver amplifier for GSM/PCS/CDMA/UMTS * Broadband amplifier for SAT-TV & LNBs * Broadband amplifier for CATV Out, 3 Description The BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 40mA. IN, 1 The BGA614 is based on Infineon Technologies' B7HF Silicon Germanium technology. GND, 2,4 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGA614 SOT343 BOs T0565 Preliminary data sheet 4 2002-05-27 BGA614 Preliminary Maximum Ratings Parameter Symbol Value Unit VD 3 V Device voltage Device current ID 80 mA Current into pin In IIn 0.7 mA PIN 10 dBm Ptot 240 mW Tj 150 C Input power 1) Total power dissipation, TS < 102C 2) Junction temperature Ambient temperature range TA -65 ... +150 C Storage temperature range TSTG -65 ... +150 C Thermal resistance: junction-soldering point Rth JS 200 K/W Notes: All Voltages refer to GND-Node 1) Valid for ZS=ZL=50, VCC=5V, RBias=62 2) TS is measured on the ground lead at the soldering point Electrical Characteristics at TA=25C (measured in test circuit specified in fig. 1) VCC=5V, RBias=62, Frequency=2GHz, unless otherwise specified Parameter Symbol min. typ. max. - 19.5 18.5 17.0 - - 1.95 2.20 2.30 - 2 Insertion power gain f = 0.1GHz f = 1.0GHz f = 2.0GHz |S21| Noise Figure (ZS=50) f = 0.1GHz f = 1.0GHz f = 2.0GHz F50 Unit dB dB Output Power at 1dB Gain Compression P-1dB - 12 - dBm Output Third Order Intercept Point OIP3 - 25 - dBm Input Return Loss RLIn - 19 - dB Output Return Loss RLOut - 24 - dB Total Device Current ID - 40 - mA Preliminary data sheet 5 2002-05-27 BGA614 Preliminary data sheet Reference Plane Preliminary VCC= 5V In Bias-T In RBias = 62 GND ID GND VD Out Bias-T Reference Plane Out Top View Caution: Device Voltage VD at Pin Out! VD = VCC - RBias I D Fig.1: Test Circuit for Electrical Characteristics and S-Parameters S-Parameter VCC=5V, RBias=62=(see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.1245 5.9 9.3122 177.5 0.0840 0.0 0.1288 -0.9 0.2 0.0854 4.6 9.3767 172.8 0.0825 1.5 0.1266 -4.8 0.4 0.1133 11.1 9.1886 165.1 0.0832 2.7 0.1268 -10.0 0.6 0.1115 7.8 9.0552 157.9 0.0837 4.7 0.1220 -16.9 0.8 0.1114 8.5 8.7953 150.8 0.0834 6.6 0.1146 -23.1 1.0 0.1205 9.8 8.5065 144.1 0.0848 8.4 0.1049 -30.4 1.2 0.1165 8.9 8.0863 137.8 0.0857 9.9 0.0948 -37.5 1.4 0.1163 8.4 7.8100 131.1 0.0883 11.4 0.0869 -45.4 1.6 0.1159 6.7 7.4972 125.6 0.0899 13.0 0.0779 -54.7 1.8 0.1164 5.7 7.2744 120.0 0.0923 13.7 0.0706 -65.1 2.0 0.1099 1.0 6.9831 114.8 0.0944 15.1 0.0642 -75.7 3.0 0.0775 -5.3 5.7650 91.5 0.1114 17.9 0.0623 -159.0 4.0 0.0358 31.2 4.7962 71.7 0.1316 17.2 0.1391 163.7 5.0 0.0719 116.9 4.0808 53.3 0.1541 13.3 0.2209 144.4 6.0 0.1365 123.3 3.5461 36.1 0.1759 7.6 0.2793 126.3 7.0 0.1807 111.4 3.0857 20.8 0.1971 1.0 0.3398 113.0 8.0 0.2628 101.8 2.7951 4.4 0.2197 -7.7 0.4199 103.4 Preliminary data sheet 6 2002-05-27 BGA614 Preliminary data sheet Preliminary 2 Power Gain |S | , G = f(f) 21 ma V = 5V, R = 62, I = 40mA CC Bias Matching |S |, |S | = f(f) 11 22 V = 5V, R = 62, I = 40mA C CC 20 Bias C 0 G ma 18 |S |2 -5 21 16 14 |S |, |S | [dB] 22 10 -15 S22 11 |S21|2, Gma [dB] -10 12 8 -20 S11 6 4 -25 2 0 -1 10 0 -30 -1 10 1 10 10 0 1 10 Frequency [GHz] 10 Frequency [GHz] Output Compression Point P = f(I ), f = 2GHz Power Gain |S | = f(I ) 21 D f = parameter in GHz -1dB 20 D 20 1 18 18 2 16 16 3 14 14 4 [dBm] 8 8 -1dB 10 6 P |S21|2 [dB] 12 12 10 8 6 6 4 4 2 2 0 0 0 20 40 60 80 0 ID [mA] Preliminary data sheet 20 40 60 80 ID [mA] 7 2002-05-27 BGA614 Preliminary data sheet Preliminary Device Current I = f(V ) D CC R = parameter in Device Current I = f(T ) D A V = 5V,R = parameter in Bias CC 80 Bias 50 0 70 16 27 47 48 46 60 56 44 68 42 I [mA] 40 62 40 D I D [mA] 50 100 38 30 68 150 36 20 34 10 32 0 2 3 4 5 30 -20 6 0 20 VCC [V] Noise figure F = f(f) V = 5V, R = 62, Z = 50 CC Bias S T = parameter in C A 40 60 80 TA [C] Package Outline 2 0.2 3 0.20 M 0.1 max B A +80C 2.5 0.9 0.1 B 1.3 0.1 4 3 1 2 +25C -20C 2 +0.2 acc. to DIN 6784 1.25 0.1 1 2.10.1 0 0.15 +0.1 -0.05 F [dB] 0.3 +0.1 0.6 +0.1 1.5 0.20 M A GPS05605 1 0.5 0 0 0.5 1 1.5 2 2.5 3 Frequency [GHz] Preliminary data sheet 8 2002-05-27