Wireless
Silicon Discretes
Preliminary data sheet, BGA614, May 2002
Never stop thinking.
BGA614
Silicon Germanium
Broadband MMIC Amplifier
MMIC
Edition 2002-05-27
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002.
All Rights Reserved.
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circuits, descriptions and charts stated herein.
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Information
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BGA614
Preliminary data sheet
Revision History: 2002-05-27 Preliminary
Previous Version: 2001-11-14
Page Subjects (major changes since last revision)
5Maximum input power specified
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Preliminary data sheet 4 2002-05-27
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Marking Chip
BGA614 SOT343 BOs T0565
Silicon Germanium
Broadband MMIC Amplifier
BGA614
Preliminary
VPS05605
4
2
1
3
GND, 2,4
IN, 1
Out, 3
Features
• Cascadable 50Ω-gain block
• 3 dB-bandwidth: DC to 2.4 GHz with
18.5 dB typical gain at 1.0 GHz
• Compression point P-1dB = 12 dBm at 2.0 GHz
• Noise figure F50Ω = 2.30 dB at 2.0 GHz
• Absolute stable
•70 GHz f
T - Silicon Germanium technology
Applications
• Driver amplifier for GSM/PCS/CDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
Description
The BGA614 is a broadband matched,
general purpose MMIC amplifier in a
Darlington configuration. It is optimized
for a typical supply current of 40mA.
The BGA614 is based on Infineon
Technologies’ B7HF Silicon Germanium
technology.
BGA614
Preliminary data sheet 5 2002-05-27
Preliminary
Maximum Ratings
Notes:
All Voltages refer to GND-Node
1) Valid for ZS=ZL=50Ω, VCC=5V, RBias=62Ω
2) TS is measured on the ground lead at the soldering point
Parameter Symbol Value Unit
Device voltage VD3V
Device current ID80 mA
Current into pin In IIn 0.7 mA
Input power 1) PIN 10 dBm
Total power dissipation, TS < 102°C 2) Ptot 240 mW
Junction temperature Tj150 °C
Ambient temperature range TA-65 ... +150 °C
Storage temperature range TSTG -65 ... +150 °C
Thermal resistance: junction-soldering point Rth JS 200 K/W
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)
VCC=5V, RBias=62Ω, Frequency=2GHz, unless otherwise specified
Parameter Symbol min. typ. max. Unit
Insertion power gain
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
|S21|2
-
-
-
19.5
18.5
17.0
-
-
-
dB
Noise Figure (ZS=50Ω)
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
F50Ω
-
-
-
1.95
2.20
2.30
-
-
-
dB
Output Power at 1dB Gain Compression P-1dB -12-dBm
Output Third Order Intercept Point OIP3-25-dBm
Input Return Loss RLIn -19-dB
Output Return Loss RLOut -24-dB
Total Device Current ID-40-mA
BGA614
Preliminary data sheet
Preliminary data sheet 6 2002-05-27
Preliminary
Reference Plane
Top View
In
Out
In
OutGND
GND
Bias-T
Bias-T
Reference Plane
R
Bias
= 62
Ω
V
D
I
D
V
CC
= 5V
Caution:
Device Voltage V
D
at Pin Out!
V
D
= V
CC
- R
Bias
I
D
S-Parameter VCC=5V, RBias=62Ω=(see Electrical Characteristics for conditions)
Fig.1: Test Circuit for Electrical Characteristics and S-Parameters
Frequency S11 S11 S21 S21 S12 S12 S22 S22
[GHz] Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.1245 5.9 9.3122 177.5 0.0840 0.0 0.1288 -0.9
0.2 0.0854 4.6 9.3767 172.8 0.0825 1.5 0.1266 -4.8
0.4 0.1133 11.1 9.1886 165.1 0.0832 2.7 0.1268 -10.0
0.6 0.1115 7.8 9.0552 157.9 0.0837 4.7 0.1220 -16.9
0.8 0.1114 8.5 8.7953 150.8 0.0834 6.6 0.1146 -23.1
1.0 0.1205 9.8 8.5065 144.1 0.0848 8.4 0.1049 -30.4
1.2 0.1165 8.9 8.0863 137.8 0.0857 9.9 0.0948 -37.5
1.4 0.1163 8.4 7.8100 131.1 0.0883 11.4 0.0869 -45.4
1.6 0.1159 6.7 7.4972 125.6 0.0899 13.0 0.0779 -54.7
1.8 0.1164 5.7 7.2744 120.0 0.0923 13.7 0.0706 -65.1
2.0 0.1099 1.0 6.9831 114.8 0.0944 15.1 0.0642 -75.7
3.0 0.0775 -5.3 5.7650 91.5 0.1114 17.9 0.0623 -159.0
4.0 0.0358 31.2 4.7962 71.7 0.1316 17.2 0.1391 163.7
5.0 0.0719 116.9 4.0808 53.3 0.1541 13.3 0.2209 144.4
6.0 0.1365 123.3 3.5461 36.1 0.1759 7.6 0.2793 126.3
7.0 0.1807 111.4 3.0857 20.8 0.1971 1.0 0.3398 113.0
8.0 0.2628 101.8 2.7951 4.4 0.2197 -7.7 0.4199 103.4
BGA614
Preliminary data sheet
Preliminary data sheet 7 2002-05-27
Preliminary
Power Gain |S21|2, Gma = f(f)
VCC = 5V, R
Bias = 62Ω, I C = 40mA
10−1 100101
0
2
4
6
8
10
12
14
16
18
20
Frequency [GHz]
|S
21
|
2
, G
ma
[dB]
|S
21
|
2
G
ma
Matching |S11|, |S22| = f(f)
VCC = 5V, R
Bias = 62Ω, I C = 40mA
10−1100101
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S
11
|, |S
22
| [dB]
S
11
S
22
Output Compression Point
P−1dB = f(ID), f = 2GHz
0 20 40 60 80
0
2
4
6
8
10
12
14
16
18
20
I
D
[mA]
P
−1dB
[dBm]
Power Gain |S21| = f(ID)
f = parameter in GHz
0 20 40 60 80
0
2
4
6
8
10
12
14
16
18
20
I
D
[mA]
|S
21
|
2
[dB]
1
2
3
4
6
8
BGA614
Preliminary data sheet
Preliminary data sheet 8 2002-05-27
Preliminary
GPS05605
1.25
±0.1
0.1 max
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
1.3
2
±0.2
B
±0.1
0.9
12
34
A
+0.1
0.6
acc. to
+0.2
DIN 6784
A
M
0.20
0.20
M
B
Device Current I D = f(VCC)
RBias = parameter in Ω
0 1 2 3 4 5 6
0
10
20
30
40
50
60
70
80
V
CC
[V]
I
D
[mA]
01627 47
68
100
150
Device Current I D = f(TA)
VCC = 5V,R
Bias = parameter in Ω
−20 0 20 40 60 80
30
32
34
36
38
40
42
44
46
48
50
T
A
[°C]
I
D
[mA]
56
62
68
Noise figure F = f(f)
VCC = 5V, R
Bias = 62Ω, ZS = 50Ω
TA = parameter in °C
0 0.5 1 1.5 2 2.5 3
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
F [dB]
−20°C
+25°C
+80°C
Package Outline