© 2008 IXYS All rights reserved 1 - 2
G
IXYS reserves the right to change limits, test conditions and dimensions.
VWO 85
20080828a
Symbol Conditions Max. Ratings per phase
IRMS TC = 85°C; 50 - 400 Hz (per phase) 59 A
IRMS TC = 85°C; 50 - 400 Hz (per phase) for 10 sec. 83 A
ITAVM TC = 85°C; (180° sine) 27 A
ITSM TVJ = 45°C t = 10 ms (50 Hz), sine 520 A
VR = 0 t = 8.3 ms (60 Hz), sine 560 A
TVJ = 125°C t = 10 ms (50 Hz), sine 470 A
VR = 0 t = 8.3 ms (60 Hz), sine 510 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1350 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1320 A2s
TVJ = 125°C t = 10 ms (50 Hz), sine 1100 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1090 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 45 A 150 A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.45 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ=125°C VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ=125°C tp = 30 µs 10 W
IT = ITAVM tp = 300 µs 5 W
PGAVM 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM for 10 sec. 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL < 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm.
18-22 lb.in.
Weight typ. 80 g
VRSM VRRM Type
VDSM VDRM
VV
1200 1200 VWO 85-12io1
1400 1400 VWO 85-14io1
1600 1600 VWO 85-16io1
Data according to IEC 60747 refer to a single thyristor unless otherwise stated.
Three Phase
AC Controller Modules
Preliminary data
C1 E1 K1 M1 S1 V1
C10 E10 K10 M10 S10 V10
pin configuration see outlines
IRMS = 3x 83 A
VRRM = 1200-1600 V
Features
• Thyristor controller for AC (circuit W3C
acc. to IEC) for mains frequency
• Package with DCB base plate
• Isolation voltage 3600 V~
• Planar passivated chips
• UL applied
Applications
• Switching and control of
three phase AC circuits
• Softstart AC motor controller
• Solid state switches
• Light and temperature control
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
• High power density
© 2008 IXYS All rights reserved 2 - 2
G
IXYS reserves the right to change limits, test conditions and dimensions.
VWO 85
20080828a
Symbol Conditions Characteristic Values
ID, IRTVJ = 125°C; VR = VRRM; VD = VDRM <5mA
VTIT= 85 A; TVJ = 25°C < 1.67 V
VT0 For power-loss calculations only 0.85 V
rT11 mΩ
VGT VD = 6 V TVJ = 25°C < 1.5 V
TVJ = -40°C < 1.6 V
IGT VD = 6 V TVJ = 25°C < 100 mA
TVJ = -40°C < 200 mA
VGD TVJ = 125°C VD = 2/3 VDRM < 0.2 V
IGD <5mA
ILTVJ = 25°C; tP = 10 µs < 450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞ < 200 mA
tgd TVJ = 25°C; VD = ½ VDRM <2µs
IG = 0.45 A; diG/dt = 0.45 A/µs
tqTVJ = 125°C; IT = 20 A, tP = 200 µs; di/dt = -10 A/µs typ. 150 µs
VR = 100 V; dv/dt = 15 V/µs; VD = 2/3 VDRM
RthJC per thyristor 0.92 K/W
per module 0.154 K/W
RthJK per thyristor 1.22 K/W
per module 0.204 K/W
dSCreeping distance on surface 12.7 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
±0.3
±0.15
±0.3
R
R
R1
80
78.5
93
17
13
4x45°
40.4
±0.25
4.5±0.5
38
0.25
65
40
±0.2
32
5.5
15.2
0.5
3.5
18.0
25.0
±0.3
±0.3
±0.3
±0.3
±0.3
2
15.2
Aufdruck der
Typenbezeichnung
(Klebeetikett)
M 2:1
(4)
Ø 2.1
Ø 2.5
Ø 6.1
1.5
6.0
Detail Y
Y
6
9
10
8
7
5
4
3
2
1
F
C
B
A
E
D
H
G
L
K
I
F
C
B
A
D
E
G
H
K
I
L
10
6
S
O
M
N
R
P
9
U
T
V
W
8
7
S
O
M
N
P
R
T
U
5
W
V
4
2
3
1
Z
M 5:1
Ø1.5 (DIN 46 431)
1.5 +0.6-0.3
0.5±0.2
Detail Z
