SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: * Case: Molded Plastic * Polarity: As Marked on Body * Weight: 5.6 grams (approx.) * Mounting Position: Any * Marking: Type Number Features: * * * * * * Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O Mechanical Dimensions: In Inches / mm ANODE 1 ANODE 2 1 3 2 COMMON CATHODE BASE Option C is also available. To order specifically the option C, please add suffix "-C" to the part number: To order specifically the standard option, please add suffix "- S" to the part number. If there is no suffix to the part number, the part could come with either option. TO-247AD * 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Data Sheet 2923, Rev. - Maximum Ratings and Electrical Characteristics @TA=25C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Forward Voltage 30 35 40 45 50 60 V V R(RMS) 21 24.5 28 31.5 35 42 V IO 30 A IFSM 200 A @IF = 20A @TC = 25C @IF = 20A @TC = 125C VFM 0.65 0.60 @TA = 25C @TA = 100C IRM 1.0 60 Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Typical Thermal Resistance Junction to Case (Note 2) Operating and Storage Temperature Range Unit VRRM VRWM VR @TC = 95C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) MBR MBR MBR MBR MBR MBR 3030PT 3035PT 3040PT 3045PT 3050PT 3060PT Cj R JC Tj, TSTG 0.75 0.65 5.0 100 700 1.4 mA pF 2.0 -65 to +150 V K/W C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Thermal resistance junction to case mounted on heatsink. * 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Data Sheet 2923, Rev. - Non-Repetitive Surge Current FORWARD CURRENT (A) MBR3035PT-MBR3045PT 24 MBR3050PT-MBR3060PT 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 175 PEAK FORWARD SURGE CURRENT (A) Forward Current Derating Curve 30 300 250 200 150 100 50 0 1 Forward Characteristics MBR3035PT-MBR3045PT REVERSE CURRENT (mA) TA = 25 C T A = 150 C 10 MBR3050PT-MBR3060PT 1 MBR3035PT-MBR3045PT 0.1 S Pulse Width = 300 2% Duty Cycle 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 Typical Junction Capacitance 2000 MBR3035PT-MBR3045PT 1000 MBR3050PT-MBR3060PT 500 200 100 0.1 1 10 REVERSE VOLTAGE (V) 100 10 T A = 125 C 1 MBR3050PT-MBR3060PT TA = 75 C 0.1 MBR3035PT-MBR3045PT 0.01 0.001 1.2 TA = 25 C MBR3050PT-MBR3060PT 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE ( C/W) FORWARD CURRENT (A) 100 50 5000 JUNCTION CAPACITANCE (pF) 5 10 20 50 NUMBER OF CYCLES AT 60Hz Reverse Characteristics 50 0.01 2 Transient Thermal Impedance 100 10 1 0.1 0.01 0.1 1 10 T. PULSE DURATION (sec.) 100 * 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web - http://www.sensitron.com * E-Mail Address - sales@sensitron.com *