KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP * High Current Gain Bandwidth Product : fT=250MHz (TYP.) TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 35 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 4 V IC Collector Current 30 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100A, IE=0 Min. 35 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=10A, IC=0 4 ICBO Collector Cut-off Current VCB=30V, IE=0 IEBO Emitter Cut-off Current VEB=4V, IC=0 hFE DC Current Gain VCE=12V, IC=2mA 40 0.65 VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA fT Current Gain Bandwidth Product VCE=10V, IC=1mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz 100 Typ. Max. Units V V V 0.1 A 0.1 A 240 0.70 0.75 0.1 0.4 V V 250 2.0 MHz 3.2 pF hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC2669 Typical Characteristics 1000 IB = 90A VCE=12V IB = 80A 8 IB = 70A 6 IB = 60A 4 IB = 40A hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 10 IB = 50A IB = 30A IB = 20A 2 100 IB = 10A 10 0.1 0 0 2 4 6 8 10 1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain 10 32 IC =10IB V BE(sat) V CE(sat) 0.01 0.1 1 24 20 16 12 8 4 0 0.0 10 IC[mA], COLLECTOR CURRENT Cob[pF], CAPACITANCE f = 1MHz IE=0 1 0.1 100 VCB[V], COLLECTOR BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2001 Fairchild Semiconductor Corporation 0.4 0.6 0.8 1.0 1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10 10 0.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1 VCE=12V 28 IC[mA], COLLECTOR CURRENT 0.1 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 10 1000 VCE = 10V 100 10 1 10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A1, June 2001 KSC2669 Package Demensions TO-92S 4.00 0.20 (1.10) 3.70 0.20 2.31 0.20 14.47 0.30 0.66 MAX. 0.49 0.10 1.27TYP [1.270.20] 1.27TYP [1.270.20] +0.10 0.35 -0.05 2.86 0.20 0.77 0.10 3.72 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3