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BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 1
January 2016
BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High-Voltage: BC556, VCEO = -65 V
• Low-Noise: BC559, BC560
• Complement to BC546, BC547, BC548, BC549, and BC550
Ordering Information
Part Number Marking Package Packing Method
BC556ABU BC556A TO-92 3L Bulk
BC556ATA BC556A TO-92 3L Ammo
BC556BTA BC556B TO-92 3L Ammo
BC556BTF BC556B TO-92 3L Tape and Reel
BC556BTFR BC556B TO-92 3L Tape and Reel
BC557ATA BC557A TO-92 3L Ammo
BC557BTA BC557B TO-92 3L Ammo
BC557BTF BC557B TO-92 3L Tape and Reel
BC558BTA BC558B TO-92 3L Ammo
BC559BTA BC559B TO-92 3L Ammo
BC559CTA BC559C TO-92 3L Ammo
BC560CTA BC560C TO-92 3L Ammo
1. Collector
123123
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Base
3. Emitter
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Unit
VCBO Collector-Base Voltage BC556 -80 VBC557 / BC560 -50
BC558 / BC559 -30
VCEO Collector-Emitter Voltage BC556 -65 VBC557 / BC560 -45
BC558 / BC559 -30
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -100 mA
ICP Peak Collector Current (Pulse) -200 mA
IBP Peak Base Current (Pulse) -200 mA
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to +150 °C
Symbol Parameter Max. Unit
PDTotal Power Dissipation 500 mW
Derate Above 2 5°C4.0mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 250 °C/W
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 -15 nA
hFE DC Current Gain VCE = -5 V, IC = -2 mA 110 800
VCE(sat) Collector-Emitter Saturation
Voltage IC = -10 mA, IB = -0.5 mA -90 -300 mV
IC = -100 mA, IB = -5 mA -250 -650
VBE(sat) Collector-Base Saturation Voltage IC = -10 mA, IB = -0.5 mA -700 mV
IC = -100 mA, IB = -5 mA -900
VBE(on) Base-Emitter On Voltage VCE = -5 V, IC = -2 mA -600 -660 -750 mV
VCE = -5 V, IC = -10 mA -800
fTCurrent Gain Bandwidth Product VCE = -5 V, IC = -10 mA,
f = 10 MHz 150 MHz
Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 6 pF
NF Noise
Figure
BC556 / BC557 / BC558 VCE = -5 V, IC = -200 μA,
f = 1 kHz, RG = 2 k Ω
210
dB
BC559 / BC560 1 4
BC559 VCE = -5 V, IC = -200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz 1.2 4.0
BC560 1.2 2.0
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 4
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = -50μA
IB = -100μA
IB = -150μA
IB = -200μA
IB = -250 μA
IB = -300μA
IB = -350μA
IB = -400μA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000
10
100
1000
TA = -55oC
TA = 25oC
VCE = -5V
hFE, DC CURRENT GAIN
IC [mA], COLLE CTOR CU RR ENT
TA = 150oC
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
TA = -55oC
TA = 25oC
IC = 20 IB
VCE(sat) [V], COLLECTOR-EMITTER
SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 150oC
-1
-10
-100
-1000
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
TA = -55oC
TA = 25oC
IC = 20 IB
VBE(sat) [V], BASE-EMITTER SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 150oC
-10
-100
-1000
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
TA = -55oCTA = 25oC
VCE = -5V
VBE(on) [V], BASE-EMITT ER ON VOLTAGE
IC [mA], COLLE CTOR CURRENT
TA = 150oC
-1 -10 -100
1
10
f=1MHz
IE = 0
Cob(pF), CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 5
Typical Performance Characteristics (Continued)
Figure 7. Current Gain Bandwidth Product Figure 8. Power Deration
Figure 9. Normalized Transient Thermal Resistance
-1 -10
10
100
1000
VCE = -5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0 50 100 150
1
10
100
1000
POWER DISSIPATION, PD [mW]
AMBIENT TEM PERATURE, [oC]
1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
0.01
0.1
1
10
100
1000
50%
r(t), Normalized Transient Thermal Resistance
t1, time(sec)
Sing le Pulse
30%
10%
5%
2%
D=1%
Rthja(t)=r(t)*Rthja
Rthja=250oC/W
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 6
Physical Dimensions
Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION, BULK
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 7
Physical Dimensions (Continued)
Figure 11. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM, AMMO, TAPE AND REEL
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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