DSP45-12A
A s
A s
Standard Rectifier
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
480
IA
V
F
1.28
R0.55 K/W
V
R
=
1 2 3
min.
45
t = 10 ms
Applications:
V
RRM
V1200
20T
VJ
V°C=
T
VJ
°C=mA3
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 130°C
d =
P
tot
270 WT
C
°C=
T
VJ
175 °C-40
V
I
RRM
=
=1200
45
45
T
VJ
=45°C
DSP45-12A
V
A
1200
V1200
25
25
25
max. repetitiv e rev erse voltage
reverse c urrent
forward v olt age
virtual junc t i on t emperature
total power dis sipation
max. forward surge current
Conditions Unit
1.37
T
VJ
°C=25
C
J
18
j
unction c apac it ance
V= V;400 T
150
V
F0
V0.81T
VJ
= 175°C
r
F
9.1 Ω
f = 1 MHz = °C25
m
V1.23T
VJ
=°C
I
F
=A
V
45
1.35
I
F
=A90
I
F
=A90
2x
threshold volt age
slope resistance for power loss calculation only
Backside: cathode
518 A
T
VJ
= 150°C
I t T=45°C
value for fus i ng
T = 150°C
2
A408
441 A
V
R
= 0 V
V
R
= 0 V
V= 0 V
V= 0 V
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
V
F
=1.23
V
● Housing:
Phase leg
TO-247
●rIndustry standard outlin
e
●rEpoxy meets UL 94V-0
●rRoHS compliant
VJ
R
VJ
R
RVJ
µA
pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
FAV
average forw ard current
FAV
150
1152
1120
832
808
2
2
2
A s
A s
2
IXYS reserves the right to change limits, conditions and dimensions. 20090528a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSP45-12A
I
RMS
Aper pin 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque
0.8
T
stg
°C150
storage temperat ure
-55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS c urrent
thermal resist anc e case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mounting force wi t h c lip
20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSP45-12A 480673Tube 30
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
DSP45-16A
DSP45-16AR
TO-247AD (3)
ISOPLUS247 (3)
Similar Part Package
1)
1
)
Marking on Product
DSP45-12A
1600
1600
Voltage class
RMS
IXYS reserves the right to change limits, conditions and dimensions. 20090528a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSP45-12A
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20090528a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSP45-12A
0.001 0.01 0.1 1
0
100
200
300
23456789011
10
2
10
3
10
4
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
70
80
0 1020304050
0
20
40
60
80
100
120
140
160
180
0 40 80 120 160
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
I
2
t
[A
2
s]
I
FSM
[A]
I
F
[A]
V
F
[V] t[s]
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t[s]
Z
th
[K/W]
0 40 80 120 160 200
0
20
40
60
80
T
C
[°C]
T
VJ
=150°C
T
VJ
=25°C
50 Hz, 80% V
RRM
T
VJ
= 45°C T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
t[ms]
R
thJA
:
0.5 KW
1.8 KW
3 KW
5 KW
8 KW
15 KW
I
dAVM
[A]
V
R
= 0 V
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180° Fig. 5 Max. forward current versus
case temperature, sine180°
Fig. 6 Transient thermal impedance junction to case
i
1
2
3
4
R
i
0.033
0.095
0.164
0.258
τ
i
0.0006
0.0039
0.033
0.272
IXYS reserves the right to change limits, conditions and dimensions. 20090528a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
