6.42
IDT70V3379S
High-Speed 32K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
6
Recommended Operating
Temperature and Supply Voltage(1,2)
Absolute Maximum Ratings(1)
Truth Table IIAddress Counter Control(1,2)
NOTES:
1 . "H" = VIH, "L" = VIL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE.
3. Outputs are in Pipelined mode: the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other memory control signals including CE0, CE1 and BEn
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn.
NOTES:
1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.
NOTES:
1. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
2. This is the parameter TA. This is the "instant on" case tempereature.
Address Previous
Address Addr
Used CLK(6) ADS CNTEN CNTRST I/O(3) MODE
XX0
↑XX L
(4) DI/O(0) Counter Reset to Address 0
An X An ↑ L(4) XHD
I/O (n) External Address Used
An Ap Ap ↑HH H D
I/O(p ) External Ad dres s Blo cked—Counter disabled (Ap reused)
XApAp + 1
↑H L
(5) HD
I/O(p +1) Counter Enab le d—Internal Address generation
4833 tbl 03
Grade Ambient
Temperature GND VDD
Commercial 0OC to +70OC0V3.3V
+ 150m V
Industrial -40OC to +85OC0V3.3V
+ 150m V
4833 tbl 04
Symbol Parameter Min. Typ. Max. Unit
VDD Core Supply Voltag e 3.15 3.3 3.45 V
VDDQ I/O Supply Voltage(3) 2.375 2.5 2.625 V
VSS Ground 0 0 0 V
VIH Input High Vo ltage(3)
(Ad d ress & Co ntrol Inputs) 1.7 ____ VDDQ + 125mV(2) V
VIH Input High Voltage - I/O(3) 1.7 ____ VDDQ + 125mV(2) V
VIL Input Lo w Vo ltag e -0.3(1) ____ 0.7 V
4833 tbl 05a
Symbol Rating Commercial
& Industrial Unit
VTERM(2) Te rminal Vo ltage
with Re s p e c t to
GND
-0.5 to +4.6 V
TBIAS Temperature
Under Bias -55 to +125 oC
TSTG Storage
Temperature -65 to +150 oC
IOUT DC Outp ut Curre nt 50 mA
4 833 tbl 06
Recommended DC Operating
Conditions with VDDQ at 2.5V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 125mV.
3 . To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be
supplied as indicated above.
Recommended DC Operating
Conditions with VDDQ at 3.3V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 150mV.
3 . To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be
supplied as indicated above.
Symbol Parameter Min. Typ. Max. Unit
VDD Co re Sup p ly Vo ltag e 3. 15 3. 3 3. 45 V
VDDQ I/O Supply Voltage(3) 3.15 3.3 3.45 V
VSS Ground 0 0 0 V
VIH Inp ut Hig h Vo l tag e
(Add re ss & Contro l Inp uts)(3) 2.0 ____ VDDQ + 150mV (2) V
VIH In p u t Hi g h Vo l tag e - I/O(3) 2.0 ____ VDDQ + 150mV (2) V
VIL Inp ut Lo w Vo ltag e -0. 3(1) ____ 0.8 V
48 33 tbl 05b