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c 2010 ROHM Co., Ltd. All rights reserved. 2010.04 - Rev.C
Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features Dimensions (Unit : mm)
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements 2SD1758 / 2SD1862.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
∗
1 Single pulse, Pw=100ms
∗
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
−40 V
V
V
A(DC)
W (Tc=25
°C
)
W
°C
°C
−32
−5
−2
ICA (Pulse)−3
10
1
∗
1
∗
2
2SB1182
2SB1240
150
−55 to 150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25C)
∗
Measured using pulse current.
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
−40
−32
−5
−
−
120
−
−
−
−
−
−
−
−
100
50
−
−
−
−1
−1
390
−0.8
∗
∗
−
−
VI
C
= −50
μ
A
I
C
= −1mA
I
E
= −50
μ
A
V
CB
= −20V
V
EB
= −4V
I
C
/I
B
= −2A/ −0.2A
V
CE
= −5V, I
E
=0.5A, f=100MHz
V
CB
= −10V, I
E
=0A, f=1MHz
V
V
μ
A
μ
A
−− V
CE
= −3V, I
C
= −0.5A
V
MHz
pF
Typ. Max. Unit Conditions
−0.5
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1182
−
0.1
+0.2
−
0.1
+0.2
+0.3
−0.1
2.3
±
0.22.3
±
0.2
0.65
±
0.1
0.9
0.75
1.0
±
0.2
0.55
±
0.1
9.5
±
0.5
5.5 1.5
±
0.3
2.5
1.5
2.3
0.5
±
0.1
6.5
±
0.2
5.1 C0.5
(3)
(2)
(1)
0.9
2SB1240
(1) Emitter
(2) Collector
(3) Base
ROHM :
ATV
1.0
6.8
±
0.2 2.5
±
0.2
1.05 0.45
±
0.1
2.54 2.54
0.5
±
0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.04 - Rev.C
Data Sheet 2SB1182 / 2SB1240
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
TL
2500hFE
QR
2SB1182
−
TV2
2500
−
QR
2SB1240
Type
hFE values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
0
−
0.2
−
0.6
−
0.8
−
1.0
−
1.2
−
1.4
−
1.6
−
1.8
−
2.0
−
2
.2
−
0.4
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
V
CE
= −3V
Ta=100°C
25°C
−40°C
Fig.2 Grounded emitter output
characteristics
−
0.40
−
0.8
−
1.2
−
1.6
−
2
0
−
0.1
−
0.2
−
0.3
−
0.4
−
0.5
IB=0A
−
250μA
−
500μA
−
750μA
−
1mA
−
1.25mA
−
1.5mA
−
1.75mA
−
2mA
−2.25mA
−
2.5mA
COLLECTOR CURRENT : IC
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V
)
Ta=25°C
Fig.3 DC current gain vs.
collector curren ( )
DC CURRENT GAIN : h
FE
−
5
−
10
−
20
−
50
−
100
−
500
−
1000
−
200
0
−
200
50
20
100
200
500
Ta=25°C
COLLECTOR CURRENT : I
C (mA)
V
CE
= −6V
−3V
−1V
Fig.4 DC current gain vs.
collector current ( )
50
20
100
200
500
DC CURRENT GAIN : h
FE
V
CE
= −3V
COLLECTOR CURRENT : I
C
(mA)
−
5
−
10
−
20
−
50
−
100
−
500
−
1000
−
200
0
−
200
Ta=100°C
25°C
−25°C
F
ig.5 Collector-emitter saturation
voltage vs. collector current (
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
−
5
−
10
−
20
−
50
−
100
−
500
−
1000
−
200
0
−
200
−
50
−
100
−
200
−
500
Ta
=
25
°C
I
C
/I
B
=50
20
10
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
−
5
−
10
−
20
−
50
−
100
−
500
−
1000
−
200
0
−
200
−
20
−
50
−
100
−
200
−
500
lC/lB=10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Ta=100°C
25°C
−40°C
Fig.7 Base-emitter saturation voltage
vs. collector current
COLLETOR CURRENT : IC (mA)
BASE SATURATION VOLTAGE : VBE(sat)(
V)
−
5
−
10
−
20
−
50
−
100
−
500
−
1000
−
200
0
−
200
−
0.1
−
0.05
−
0.2
−
0.5
−
1
IC /IB=10
Ta=25°C
Fig.8 Gain bandwidth product vs
emitter current
Ta=25°C
V
CE
= −5V
EMITTER CURRENT : I
E (mA)
TRANSITION FREQUENCY : f
T
(MHz)
5 10 20 50 100 500 1000 200
200
50
100
200
500
Fig.9 Collector output capacitance vs
.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : VCB
(
V)
EMITTER TO BASE VOLTAGE
: VEB
(V
)
COLLECTOR OUTPUT CAPACITANCE : Cob
(p
F)
EMITTER INPUT CAPACITANCE
: Cib
(pF
)
Ta
=
25
°C
f=1MHz
IE=0A
IC=0A
−
0.5
−
1
−
2
−
5
−
10
−
20
−
3
0
10
20
50
200
300
100
Cib
Cob
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.04 - Rev.C
Data Sheet 2SB1182 / 2SB1240
Fig.10 Safe operation area
(2SB1182)
−0.5−0.2−0.1 −1−2−10−5−20 −5
0
−
0.01
−
0.05
−
0.02
−
0.1
−
0.5
−
0.2
−
1
−
2
−
5
COLLECTOR CURRENT : IC
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
Ta=25°C
∗Single
nonrepetitive
pulse
IC Max. (Pulse)
DC
PW=500μs
PW=
100
ms
PW=1ms
R1010
A
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