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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS0310S N-Channel PowerTrench(R) SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 robust package design Applications 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Desktop Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VDSt Drain to Source Transient Voltage ( tTransient < 100 ns) VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 C -Continuous (Silicon limited) TC = 25 C -Continuous TA = 25 C PD TJ, TSTG Units V 33 V 20 V 42 83 (Note 1a) -Pulsed 19 A 90 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25 C Power Dissipation TA = 25 C 60 46 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 2.7 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDMS0310S Device FDMS0310S (c)2009 Fairchild Semiconductor Corporation FDMS0310S Rev.C3 Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS0310S N-Channel PowerTrench(R) SyncFETTM January 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 A IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 18 mV/C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 C -5 VGS = 10 V, ID = 18 A 3.2 4.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 14 A 4.3 5.2 VGS = 10 V, ID = 18 A, TJ = 125 C 4.1 5.2 VDS = 5 V, ID = 18 A 97 gFS Forward Transconductance 1.2 1.9 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2120 2820 735 975 pF pF 90 135 pF 1.1 2.2 ns Switching Characteristics td(on) Turn-On Delay Time 12 21 tr Rise Time 10 ns td(off) Turn-Off Delay Time VDD = 15 V, ID = 18 A, VGS = 10 V, RGEN = 6 5 28 44 ns tf Fall Time 4 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 33 46 nC Qg Total Gate Charge 22 Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 18 A 15 Qgs 6.5 nC Qgd Gate to Drain "Miller" Charge 4.0 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.48 0.7 VGS = 0 V, IS = 18 A (Note 2) 0.80 1.2 IF = 18 A, di/dt = 300 A/s V 26 42 ns 26 42 nC Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 60 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS0310S Rev.C3 2 www.fairchildsemi.com FDMS0310S N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TJ = 25 C unless otherwise noted ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V 60 VGS = 4.5 V VGS = 3.5 V VGS = 4 V 30 VGS = 3 V 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 90 VGS = 3 V 10 8 VGS = 3.5 V 6 0 2.0 0 30 60 90 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 12 ID = 18 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V VGS = 4 V 2 1.5 ID = 18 A 8 6 TJ = 125 oC 4 2 100 125 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 10 TJ, JUNCTION TEMPERATURE (oC) TJ = 25 oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 90 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V 4 Figure 1. On-Region Characteristics VDS = 5 V 60 TJ = 125 oC 30 TJ = 25 oC TJ = -55 oC 0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1 2 3 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS0310S Rev.C3 3 1.2 www.fairchildsemi.com FDMS0310S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted 3000 ID = 18 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V VDD = 10 V 6 VDD = 15 V 4 1000 Coss 2 0 100 0 5 10 15 20 25 30 50 0.1 35 Figure 7. Gate Charge Characteristics 30 90 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC TJ = 100 oC TJ 1 0.01 60 VGS = 10 V 30 0.1 VGS = 4.5 V Limited by Package = 125 oC o RJC = 2.7 C/W 1 10 0 25 100 50 75 100 125 150 o Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 P(PK), PEAK TRANSIENT POWER (W) 300 100 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1000 100 s 10 1 Crss f = 1 MHz VGS = 0 V 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RJA = 125 oC/W DC TA = 25 oC 0.1 1 10 100200 100 10 SINGLE PULSE RJA = 125 oC/W 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area FDMS0310S Rev.C3 VGS = 10 V 4 www.fairchildsemi.com FDMS0310S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS0310S Rev.C3 5 www.fairchildsemi.com FDMS0310S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted SyncFETTM Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild's SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS0310S. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 20 CURRENT (A) 15 di/dt = 300 A/s 10 5 0 -5 0 30 60 90 120 150 TIME (ns) TJ = 125 oC TJ = 100 oC -3 10 -4 10 TJ = 25 oC -5 10 -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFETTM body diode reverses leakage versus drain-source voltage Figure 14. FDMS0310S SyncFETTM body diode reverse recovery characteristic FDMS0310S Rev.C3 10 6 www.fairchildsemi.com FDMS0310S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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