AUIRFS3004-7P AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. max. Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Base Part Number Package Type AUIRFS3004-7P D2Pak 7 Pin 40V 0.90m ID (Silicon Limited) 1.25m 400A ID (Package Limited) 240A D2Pak 7 Pin G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRFS3004-7P AUIRFS3004-7PTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 400 ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 280 240 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 1610 380 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Units A W 2.5 20 290 See Fig.14,15, 22a, 22b 2.0 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- 0.40 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-20 AUIRFS3004-7P Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 40 Typ. Max. Units --- --- V Conditions VGS = 0V, ID = 250A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.038 --- V/C Reference to 25C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance --- 0.90 1.25 m VGS = 10V, ID = 195A VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V gfs RG Forward Trans conductance Gate Resistance IDSS Drain-to-Source Leakage Current 1300 --- --- --- 2.0 --- --- --- 20 --- --- 250 S VDS = 10V, ID = 195A VDS = 40V, VGS = 0V A VDS = 40V,VGS = 0V,TJ =125C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 100 -100 nA VDS = VGS, ID = 250A VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance --- --- --- --- --- --- --- --- --- --- 160 42 65 95 23 240 91 160 9130 2020 240 --- --- --- --- --- --- --- --- --- Crss Reverse Transfer Capacitance --- 990 --- Coss eff.(ER) Effective Output Capacitance (Energy Related) --- 2590 --- VDD = 26V ID = 240A ns RG= 2.7 VGS = 10V VGS = 0V VDS = 25V pF = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V Coss eff.(TR) Effective Output Capacitance (Time Related) --- 2650 --- VGS = 0V, VDS = 0V to 32V Min. Typ. Max. Units --- --- 400 --- --- 1610 --- --- --- --- --- --- --- 49 51 37 41 3.2 1.3 --- --- --- --- --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ID = 180A VDS = 20V nC VGS = 10V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 195A,VGS = 0V TJ = 25C VDD = 34V ns TJ = 125C IF = 240A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.01mH, RG = 25, IAS = 240A, VGS =10V. Part not recommended for use above this value. ISD 240A, di/dt 740A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C. RJC value shown is at time zero 2 2015-10-20 AUIRFS3004-7P 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 100 10 1 4.5V Tj = 25C 0.1 1 10 100 0.1 1000 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) Tj = 175C 10 V DS, Drain-to-Source Voltage (V) 100 T J = 175C T J = 25C 10 1 VDS = 25V 60s PULSE WIDTH 0.1 3 4 5 6 7 ID = 195A VGS = 10V 1.5 1.0 0.5 8 -60 -40 -20 0 20 40 60 80 100 120 140160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID = 180A Coss = Cds + Cgd C, Capacitance (pF) 60s PULSE WIDTH 4.5V 60s PULSE WIDTH 0.1 C iss C oss 10000 C rss 1000 100 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 12.0 VDS = 32V VDS = 20V 10.0 8.0 6.0 4.0 2.0 0.0 0 50 100 150 200 250 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-10-20 AUIRFS3004-7P 10000 T J = 175C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 25C 10 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100sec 100 1msec 10msec 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 0.0 0.5 1.0 1.5 1 2.0 0 1 VSD , Source-to-Drain Voltage (V) ID, Drain Current (A) Limited By Package 300 240 180 120 60 0 50 75 100 125 150 100 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 420 25 10 VDS , Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 360 DC 50 Id = 5mA 48 46 44 42 40 -60 -40 -20 0 20 40 60 80 100 120 140160 180 175 T J , Temperature ( C ) T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature 1200 EAS , Single Pulse Avalanche Energy (mJ) 3.5 2.5 Energy (J) ID 44A 80A BOTTOM 240A TOP 1000 3.0 2.0 1.5 1.0 0.5 800 600 400 200 0 0.0 -5 0 5 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 Fig 10. Drain-to-Source Breakdown Voltage 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2015-10-20 AUIRFS3004-7P Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 J 0.05 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 3 2 4 3 C 4 Ci= iRi Ci= iRi 1E-005 I (sec) 0.00757 0.000006 0.06508 0.000064 0.18313 0.001511 0.14378 0.009800 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ri (C/W) R4 R4 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width 320 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 240A EAR , Avalanche Energy (mJ) 280 240 200 160 120 80 40 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature 5 2015-10-20 4.5 10 4.0 9 3.5 8 3.0 2.5 IRRM (A) VGS(th) , Gate threshold Voltage (V) AUIRFS3004-7P ID = 250A ID = 1.0mA 2.0 ID = 1.0A IF = 96A V R = 34V TJ = 25C TJ = 125C 7 6 5 4 1.5 3 1.0 -75 -50 -25 0 2 25 50 75 100 125 150 175 200 100 200 T J , Temperature ( C ) 400 500 diF /dt (A/s) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 12 140 IF = 144A V R = 34V 11 10 TJ = 25C TJ = 125C 9 8 QRR (nC) IRRM (A) 300 7 6 120 IF = 96A V R = 34V 100 TJ = 25C TJ = 125C 80 60 5 4 40 3 2 20 100 200 300 400 500 100 200 diF /dt (A/s) 300 400 500 diF /dt (A/s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 180 IF = 144A V R = 34V 160 TJ = 25C TJ = 125C QRR (nC) 140 120 100 80 60 40 20 100 200 300 400 500 diF /dt (A/s) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2015-10-20 AUIRFS3004-7P Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit I AS Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 24b. Gate Charge Waveform 2015-10-20 AUIRFS3004-7P D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches)) D2Pak - 7 Pin Part Marking Information Part Number AUFS3004-7P Date Code YWWA IR Logo XX Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-20 AUIRFS3004-7P D2Pak - 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-20 AUIRFS3004-7P Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant D2-Pak 7 Pin MSL1 Class M4 (+/- 800V) AEC-Q101-002 Class H3A (+/- 6000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/4/2015 10/20/2015 Comments Updated datasheet based on new IR corporate template . Updated part marking from "AUS3004-7P" to "AUFS3004-7P" on page 10. Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). 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