MMBZxxxALT1G Series, SZMMBZxxxALT1G Series 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT-23 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. CATHODE 1 Features CATHODE 2 SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range - 3 V to 26 V Standard Zener Breakdown Voltage Range - 5.6 V to 33 V Peak Power - 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform ESD Rating: - Class 3B (> 16 kV) per the Human Body Model - Class C (> 400 V) per the Machine Model Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 mA Flammability Rating UL 94 V-0 AEC-Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: SOT-23 CASE 318 STYLE 12 3 ANODE MARKING DIAGRAM xxxMG G 1 xxx M G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 3 of this data sheet. 260C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 13 1 Publication Order Number: MMBZ5V6ALT1/D MMBZxxxALT1G Series, SZMMBZxxxALT1G Series MAXIMUM RATINGS Rating Peak Power Dissipation @ 1.0 ms (Note 1) @ TL 25C MMBZ5V6ALT1G thru MMBZ9V1ALT1G MMBZ12VALT1G thru MMBZ33VALT1G Symbol Value Unit Ppk 24 40 W 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25C Derate above 25C PD Thermal Resistance Junction-to-Ambient RqJA Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C Derate above 25C PD Thermal Resistance Junction-to-Ambient RqJA 417 C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 C TL 260 C Lead Solder Temperature - Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non-repetitive current pulse per Figure 6 and derate above TA = 25C per Figure 7. 2. FR-5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Package Shipping MMBZ5V6ALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SZMMBZ5V6ALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBZ5V6ALT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel MMBZ6VxALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SZMMBZ6VxALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBZ6VxALT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel MMBZ9V1ALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBZ9V1ALT13G SOT-23 (Pb-Free) 10,000 / Tape & Reel MMBZxxVALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SZMMBZxxVALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBZxxVALT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SZMMBZxxVALT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT VC VBR VRWM Test Current QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK V IR VF IT IPP Uni-Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) 24 WATTS Max Zener Impedance (Note 5) VC @ IPP (Note 6) @ IT ZZT @ IZT ZZK @ IZK VC IPP QVBR mA W W mA V A mV/5C Breakdown Voltage IR @ VRWM Device* Device Marking VRWM Volts mA Min Nom Max MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26 MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 - - - 8.7 2.76 2.80 MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 - - - 9.6 2.5 3.4 MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 - - - 14 1.7 7.5 VBR (Note 4) (V) (VF = 0.9 V Max @ IF = 10 mA) 40 WATTS Device Marking VRWM IR @ VRWM Volts nA MMBZ12VALT1G 12A 8.5 MMBZ15VALT1G 15A 12 MMBZ18VALT1G 18A MMBZ20VALT1G 20A MMBZ27VALT1G/T3G MMBZ33VALT1G Device* VC @ IPP (Note 6) Breakdown Voltage VBR (Note 4) (V) @ IT VC IPP QVBR Min Nom Max mA V A mV/5C 200 11.40 12 12.60 1.0 17 2.35 7.5 50 14.25 15 15.75 1.0 21 1.9 12.3 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 17 50 19.00 20 21.00 1.0 28 1.4 17.2 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4 4. VBR measured at pulse test current IT at an ambient temperature of 25C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 6 and derate per Figure 7 * Include SZ-prefix devices where applicable. http://onsemi.com 3 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series TYPICAL CHARACTERISTICS 1000 15 100 12 10 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 18 9 1 6 0.1 3 0 -40 0 + 50 + 100 TEMPERATURE (C) 0.01 -40 + 150 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 60 320 C, CAPACITANCE (pF) 50 240 200 5.6 V 160 120 15 V 80 0 40 27 V 30 20 10 40 0 1 2 0 3 33 V 0 1 BIAS (V) 2 3 BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Typical Capacitance versus Bias Voltage (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 300 PD, POWER DISSIPATION (mW) C, CAPACITANCE (pF) 280 250 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 0 25 50 75 100 125 TEMPERATURE (C) 150 175 Figure 5. Steady State Power Derating Curve http://onsemi.com 4 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr 10 ms 100 VALUE (%) PEAK VALUE - IPP IPP HALF VALUE - 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 6. Pulse Waveform RECTANGULAR WAVEFORM, TA = 25C Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) Figure 7. Pulse Derating Curve BIDIRECTIONAL 1 200 100 100 10 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) UNIDIRECTIONAL 0.1 1 10 100 RECTANGULAR WAVEFORM, TA = 25C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 8. Maximum Non-repetitive Surge Power, Ppk versus PW Figure 9. Maximum Non-repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). http://onsemi.com 5 1000 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT-23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND MMBZ5V6ALT1G THRU MMBZ33VALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS I/O CPU CLOCK MMBZ5V6ALT1G THRU MMBZ33VALT1G CONTROL BUS GND MMBZ5V6ALT1G THRU MMBZ33VALT1G http://onsemi.com 6 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBZ5V6ALT1/D