Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 13
1Publication Order Number:
MMBZ5V6ALT1/D
MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 3 V to 26 V
Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 6 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−23
CASE 318
STYLE 12
CATHODE 1
3 ANODE
CATHODE 2
MARKING DIAGRAM
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
xxxMG
G
xxx = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G
@ TL 25C MMBZ12VALT1G thru MMBZ33VALT1G
Ppk 24
40
W
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25C
Derate above 25C
PD
225
1.8
mW
mW/C
Thermal Resistance Junction−to−Ambient RqJA 556 C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25C
Derate above 25C
PD
300
2.4
mW
mW/C
Thermal Resistance Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 C
Lead Solder Temperature − Maximum (10 Second Duration) TL260 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 6 and derate above TA = 25C per Figure 7.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device Package Shipping†
MMBZ5V6ALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ5V6ALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ5V6ALT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ6VxALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ6VxALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ6VxALT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ9V1ALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ9V1ALT13G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZxxVALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZxxVALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZxxVALT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZMMBZxxVALT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA) 24 WATTS
Device*
Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage
Max Zener
Impedance (Note 5)
VC @ IPP
(Note 6)
QVBR
VBR (Note 4) (V) @ IT
ZZT
@ IZT ZZK @ IZK VCIPP
Volts mAMin Nom Max mA W W mA V A mV/5C
MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26
MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 − − − 8.7 2.76 2.80
MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 − − − 9.6 2.5 3.4
MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 − − − 14 1.7 7.5
(VF = 0.9 V Max @ IF = 10 mA) 40 WATTS
Device*
Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage VC @ IPP (Note 6)
QVBR
VBR (Note 4) (V) @ ITVCIPP
Volts nA Min Nom Max mA V A mV/5C
MMBZ12VALT1G 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5
MMBZ15VALT1G 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3
MMBZ18VALT1G 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3
MMBZ20VALT1G 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2
MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3
MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4
4. VBR measured at pulse test current IT at an ambient temperature of 25C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
−40 + 50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (C)
+ 100 + 150
15
12
9
6
3
0
−40 + 25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (C)
+ 85 + 125
100
10
1
0.1
0.01
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
IR (nA)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
TEMPERATURE (C)
FR−5 BOARD
ALUMINA SUBSTRATE
01 2 3
320
280
240
160
120
40
0
C, CAPACITANCE (pF)
BIAS (V)
200
80
15 V
5.6 V
PD, POWER DISSIPATION (mW)
Figure 5. Steady State Power Derating Curve
01 2 3
60
40
30
10
0
C, CAPACITANCE (pF)
BIAS (V)
50
20
33 V
27 V
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.1 1 10 100 1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25C
BIDIRECTIONAL
Figure 6. Pulse Waveform
VALUE (%)
100
50
001 2 34
t, TIME (ms)
Figure 7. Pulse Derating Curve
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP
.
HALF VALUE −IPP
2
tP
tr 10 ms
PEAK VALUE −IPP
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (C)
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW
Figure 9. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
0.1 1 10 100 1000
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25C
BIDIRECTIONAL
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25C
Ppk, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
http://onsemi.com
6
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
MMBZ5V6ALT1G
THRU
MMBZ33VALT1G
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
MMBZ5V6ALT1G
THRU
MMBZ33VALT1G
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DATA BUS
GND
VGG
VDD
MMBZ5V6ALT1G
THRU
MMBZ33VALT1G
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Phone: 81−3−5817−1050
MMBZ5V6ALT1/D
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