PNP Switching Transistor
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
BR
CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 012V
V
BR
CES Collector-Emitter Breakdown Voltage IC = 100 µA, VBE = 0 12 V
V
BR
CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 12 V
V
BR
EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 4.0 V
ICES Collector Cutoff Current VCE = 6.0 V, VBE = 0
VCE = 6.0 V, VBE = 0, T
= 65°C0.01
1.0 µA
µA
IBBase Cu rrent VCE = 6.0 V, VBE = 0 10 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 10 mA, VCE = 0.3 V
IC = 50 mA, VCE = 1.0 V 30
20 120
VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC= 10 mA, IB= 1.0 mA,T
=65°C
0.3
0.2
0.6
0.25
V
V
V
V
VBE(sat)Base-Emitte r Saturation Vo l tage IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.75
0.8 0.95
1.0
1.5
V
V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
f = 100 MHz 500 MHz
Cobo Output Ca pacitance VCB = 5.0 V, IE = 0,
f = 1.0 MHz 3.5 pF
Cibo Input Capacitance VBE = 0.5 V, IC = 0,
f = 1.0 MHz 3.5 pF
SWITCHING CHARACTERISTICS
tdDelay Time VCC = 6.0 V, VBE(off) = 1.9 V, 10 ns
trRise T ime IC = 50 mA, IB1 = 5.0 mA 30 ns
tsStorage Time VCC = 6.0 V, IC = 50 m A , 20 ns
tfFall Time IB1 = IB2 = 5.0 mA 12 ns
ton Turn- On Ti me VCC = 6.0 V, VBE(off) = 1.9 V, 25 ns
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA, 60 ns
IB1 = IB2 = 0. 5 mA
toff Turn-Off Time VCC = 6.0 V, VBE(off) = 1.9 V, 35 ns
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA, 75 ns
IB1 = IB2 = 0. 5 mA
PN3640 / MMBT3640
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.