© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 6
1Publication Order Number:
BAS20HT1/D
BAS20HT1, SBAS20HT1G
High Voltage
Switching Diode
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR200 Vdc
Repetitive Peak Reverse Voltage VRRM 200 Vdc
Continuous Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 625 mAdc
Repetitive Peak Forward Current IFRM 500 mA
NonRepetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
t = 1 ms
t = 1 s
IFSM
5.0
2.0
0.5
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board*
TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance JunctiontoAmbient RqJA 635 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*FR5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
1.0
100
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR) 250 Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD5.0 pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr 50 ns
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
Device Package Shipping
ORDERING INFORMATION
SOD323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
JR = Specific Device Code
M = Date Code*
G= PbFree Package
1
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
JR M G
G
BAS20HT1G SOD323
(PbFree)
3000 / Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
SBAS20HT1G SOD323
(PbFree)
3000 / Tape & Reel
BAS20HT1, SBAS20HT1G
http://onsemi.com
2
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W Output
Pulse
Generator
50 W Input
Sampling
Oscilloscope
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Current Figure 3. Leakage Current
1000
I
VF
, FORWARD VOLTAGE (V)
0.1
0.2 0.4 0.6
100
10
1.0
0.8 1.0 1.2 1.40
100
I
VR, REVERSE VOLTAGE (V)
1.0
0.001
500
10
0.1
100 150 200 250
0.01
300
125°C
150°C40°C
25°C
55°C
, REVERSE CURRENT ( A)
Rm
, FORWARD CURRENT (mA)
F
125°C
150°C
40°C
25°C
55°C
Figure 4. Total Capacitance
2.0
C
VR, REVERSE VOLTAGE (V)
0
5.0 10 15
1.8
0.4
0.2
20 25 30 35
0
, TOTAL CAPACITANCE (pF)
T
0.8
0.6
1.2
1.0
1.6
1.4
f = 1 MHz
IE = 0 A
TA = 25°C
BAS20HT1, SBAS20HT1G
http://onsemi.com
3
PACKAGE DIMENSIONS
HE
SOD323
CASE 47702
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
12bE
A3
A1
A
CNOTE 5
L
1.60
0.063
0.63
0.025
0.83
0.033
2.85
0.112
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 421 33 790 2910
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Phone: 81358171050
BAS20HT1/D
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