SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D *For Complementary With PNP Type BC859/860. H MAXIMUM RATING (Ta=25) BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage VCEO 30 Q V 30 V 45 VEBO 5 V IC 100 mA PC * 350 mW Tj 150 Tstg -55150 Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range P P 50 J BC850 VCBO 1 UNIT K BC849 Collector-Base Voltage RATING N SYMBOL C CHARACTERISTIC 3 G A 2 DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 PC* : Package Mounted On 99.5% Alumina 10x8x0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Collector-Emitter BC849 Breakdown Voltage BC850 Collector-Base BC849 Breakdown Voltage BC850 Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Note : hFE Classification B:200450, 30 - - 45 - - 30 - - 50 - - UNIT IC=10A, IE=0 V(BR)EBO IE=10A, IC=0 5 - - V ICBO VCB=30V, IE=0 - - 15 nA V V hFE(Note) IC=2mA, VCE=5V 200 - 800 VBE(ON) 1 IC=2mA, VCE=5V 0.58 0.66 0.7 VBE(ON) 2 IC=10mA, VCE=5V - - 0.77 VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6 VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 - VBE(sat) 2 IC=100mA, IB=5mA - 0.9 - IC=10mA, VCE=5V, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF IC=200A, VCE=5V - - 4.0 Rg=10k, f=1kHz - - 1.0 NF BC850 MAX. V(BR)CBO BC849 Noise Figure TYP. IC=10mA, IB=0 Cob Collector Output Capacitance MIN. V(BR)CEO fT Transition Frequency TEST CONDITION V V V dB C:420800 Marking Lot No. MARK SPEC TYPE BC849B BC849C BC850B BC850C MARK 2B 2C 2F 2G 1999. 11. 30 Revision No : 2 Type Name 1/1