1999. 11. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC849/850
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
·For Complementary With PNP Type BC859/860.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE Classification B:200～450, C:420～800
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
BC849 V(BR)CEO IC=10mA, IB=0 30 - - V
BC850 45 - -
Collector-Base
Breakdown Voltage
BC849 V(BR)CBO IC=10μA, IE=0 30 - - V
BC850 50 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
DC Current Gain hFE(Note) IC=2mA, VCE=5V 200 - 800
Base-Emitter Voltage VBE(ON) 1 IC=2mA, VCE=5V 0.58 0.66 0.7 V
VBE(ON) 2 IC=10mA, VCE=5V - - 0.77
Collector-Emitter Saturation Voltage VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 V
VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6
Base-Emitter Saturation Voltage VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 - V
VBE(sat) 2 IC=100mA, IB=5mA - 0.9 -
Transition Frequency fTIC=10mA, VCE=5V, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF
Noise Figure BC849 NF IC=200μA, VCE=5V
Rg=10kΩ, f=1kHz
- - 4.0 dB
BC850 - - 1.0
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage BC849 VCBO
30 V
BC850 50
Collector-Emitter Voltage BC849 VCEO
30 V
BC850 45
Emitter-Base Voltage VEBO 5 V
Collector Current IC100 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
PC* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
TYPE BC849B BC849C BC850B BC850C
MARK 2B 2C 2F 2G
MARK SPEC
Type Name
Marking
Lot No.
