SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM * Dual High Speed, Medium Power Saturated Switching Transistor * Hermetic Surface Mount Ceramic Package * Dual NPN version of the 2N2222A Transistor * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated). Per Device VCBO VCEO VEBO IC PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current TA = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 75V 50V 6V 0.8A 500mW 2.86mW/C -65 to +200C -65 to +200C THERMAL PROPERTIES Per Device Symbols Parameters RJA (1) RJSP(IS)(2) (1) (2) Max. Units Thermal Resistance, Junction To Ambient 325 C/W Thermal resistance Junction To Solder Pads 110 C/W For non-thermal conductive PCB or unknown PCB surface mount conditions in free air Infinite sink mount to PCB Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7168 Issue 2 Page 1 of 3 SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols (3) V(BR)CEO ICES Parameters Test Conditions Collector-Emitter Sustaining Voltage Collector-Emitter Cut-Off Current IC = 10mA Collector-Base Cut-Off Current ICBO IEBO Emitter Cut-Off Current Min. IB = 0 Typ. Max. 50 VCE = 50V Units V 50 nA IE = 0 VCB = 75V 10 A IE = 0 VCB = 60V 10 nA TA = 150C 10 A VEB = 4V 10 nA VEB = 6V 10 A IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1.0 IC = 150mA IB = 15mA IC = 500mA IB = 50mA IC = 0.1mA VCE = 10V 50 IC = 1.0mA VCE = 10V 75 IC = 10mA VCE = 10V 100 TA = -55C 35 IC = 0 ON CHARACTERISTICS VCE(Sat) (3) VBE(Sat) (3) hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 150mA IC = 500mA 0.6 1.2 V V 2.0 VCE = 10V (1) VCE = 10V (1) 100 325 300 30 SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 Cibo Input Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 25 IC = 20mA VCE = 20V f = 100MHz 2.5 - IC = 1.0mA VCE = 10V f = 1.0kHz 50 - |hfe| hfe Magnitude of smallsignal, short-circuit forward current transfer ratio Small Signal Current Gain pF Notes (3) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7168 Issue 2 Page 2 of 3 SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM SWITCHING CHARACTERISTICS Symbols Parameters Test Conditions ton Saturated Turn-on Time VCC = 30V Saturated Turn-off Time IC = 150mA toff Min. Typ. Max. 35 IB1 = 15mA Units ns 300 MECHANICAL DATA Dimensions in mm (inches) 3 1 4 A 6 0.23 rad. (0.009) 5 6.22 0.13 (0.245 0.005) 4.32 0.13 (0.170 0.005) 2 2.54 0.13 (0.10 0.005) 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 0.64 0.06 (0.025 0.003) 2.29 0.20 (0.09 0.008) A = 1.27 0.13 (0.05 0.005) LCC2 (MO-041BB) Underside View Pad 1 - Collector 1 Pad 2 - Base 1 Pad 3 - Base 2 Pad 4 - Collector 2 Pad 5 - Emitter 2 Pad 6 - Emitter 1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7168 Issue 2 Page 3 of 3