SILICON SWITCHING
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7168
Issue 2
Page 1 of 3
2N2222ADCSM
• Dual High Speed, Medium Power Saturated Switching Transistor
• Hermetic Surface Mount Ceramic Package
• Dual NPN version of the 2N2222A Transistor
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated). Per Device
VCBO Collector – Base Voltage 75V
VCEO Collector – Emitter Voltage 50V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 0.8A
PD Total Power Dissipation at TA = 25°C 500mW
Derate Above 25°C 2.86mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Per Device
Symbols Parameters Max. Units
RθJA
(1)
Thermal Resistance, Junction To Ambient 325 °C/W
RθJSP(IS)
(2)
Thermal resistance Junction To Solder Pads 110 °C/W
(1)
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air
(2)
Infinite sink mount to PCB
SILICON SWITCHING
NPN TRANSISTOR
2N2222ADCSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7168
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
V(BR)CEO
(3)
Collector-Emitter
Sustaining Voltage IC = 10mA IB = 0 50 V
ICES Collector-Emitter
Cut-Off Current VCE = 50V
50 nA
IE = 0 VCB = 75V 10 µA
IE = 0 VCB = 60V 10 nA
ICBO Collector-Base
Cut-Off Current
TA = 150°C
10 µA
IC = 0 VEB = 4V
10 nA
IEBO Emitter Cut-Off Current
VEB = 6V
10 µA
ON CHARACTERISTICS
IC = 150mA IB = 15mA
0.3
VCE(Sat)
(3)
Collector-Emitter
Saturation Voltage IC = 500mA IB = 50mA 1.0
V
IC = 150mA IB = 15mA 0.6 1.2
VBE(Sat)
(3)
Base-Emitter
Saturation Voltage IC = 500mA IB = 50mA 2.0
V
IC = 0.1mA VCE = 10V 50
IC = 1.0mA VCE = 10V 75 325
IC = 10mA VCE = 10V 100
TA = -55°C 35
IC = 150mA VCE = 10V
(1)
100 300
hFE DC Current Gain
IC = 500mA VCE = 10V
(1)
30
-
SMALL SIGNAL CHARACTERISTICS
Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8
Cibo Input Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 25
pF
|hfe|
Magnitude of small-
signal, short-circuit
forward current transfer
ratio
IC = 20mA VCE = 20V f = 100MHz 2.5
-
hfe Small Signal Current
Gain IC = 1.0mA VCE = 10V f = 1.0kHz 50
-
Notes
NotesNotes
Notes
(3)
Pulse Width ≤ 300us, δ ≤ 2%
SILICON SWITCHING
NPN TRANSISTOR
2N2222ADCSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7168
Issue 2
Page 3 of 3
SWITCHING CHARACTERISTICS
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
ton Saturated Turn-on Time 35
toff Saturated Turn-off Time
VCC = 30V
IC = 150mA
IB1 = 15mA
300
ns
MECHANICAL DATA
Dimensions in mm (inches)
1
2
6
3
4
5
2
.
5
4
±
0
.
1
3
(0.10 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
0.23
(0.009)
1
.
4
0
±
0
.
1
5
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =6.22 ± 0.13
(0.245 ± 0.005)
4.32 ± 0.13
(0.170 ± 0.005)
-
041BB)
Underside View
Pad 1 – Collector 1 Pad 4 – Collector 2
Pad 2 – Base 1 Pad 5 – Emitter 2
Pad 3 – Base 2 Pad 6 – Emitter 1