PMEG3010ESB 30 V, 1 A low VF MEGA Schottky barrier rectifier 1 July 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits * * * * * Average forward current: IF(AV) 1 A Reverse voltage: VR 30 V Low forward voltage, typical: VF = 495 mV Low reverse current, typical: IR = 12 A Package height typ. 270 m 3. Applications * * * * * * Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current = 0.5; f = 20 kHz; Tsp 140 C; - - 1 A VR reverse voltage Tj = 25 C - - 30 V VF forward voltage IF = 1 A; tp 300 s; 0.02; - 495 565 mV VR = 10 V; tp 3 ms; 0.3; Tj = 25 C - 1.6 5 A VR = 30 V; tp 3 ms; 0.3; Tj = 25 C - 12 45 A square wave Tj = 25 C IR reverse current Scan or click this QR code to view the latest information for this product PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN1006-2 (SOD993) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG3010ESB Package Name Description Version DSN1006-2 DSN1006-2, leadless ultra small package; 2 terminals; body 1.0 x 0.6 x 0.27 mm SOD993 7. Marking Table 4. Marking codes Type number Marking code PMEG3010ESB 3E PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 2 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 C - 30 V IF forward current Tsp 135 C; = 1 - 1.4 A IF(AV) average forward current = 0.5; f = 20 kHz; Tamb 105 C; - 1 A - 1 A [1] square wave = 0.5; f = 20 kHz; Tsp 140 C; square wave IFRM repetitive peak forward current tp 1 ms; 0.25 - 4 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 C; square wave - 10 A Ptot total power dissipation Tamb 25 C [2] - 0.525 W [3] - 1 W [1] - 1.78 W Tj junction temperature - 150 C Tamb ambient temperature -55 150 C Tstg storage temperature -65 150 C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] PMEG3010ESB Product data sheet Min Typ Max Unit [1][2] - - 240 K/W [1][3] - - 125 K/W [1][4] - - 70 K/W [5] - - 15 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of anode tab. 2 All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 3 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-016800 103 Zth(j-a) (K/W) duty cycle = 1 0.5 102 0.25 0.1 10 0 0.75 0.33 0.2 0.05 0.02 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-016801 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 4 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 102 aaa-016802 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 5 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 1 mA; tp = 300 s; = 0.02; 30 - - V forward voltage IF = 1 mA; tp 300 s; 0.02; - 205 - mV - 265 - mV - 340 375 mV - 370 - mV - 425 475 mV - 455 - mV - 495 565 mV VR = 5 V; tp 3 ms; 0.3; Tj = 25 C - 0.9 - A VR = 10 V; tp 3 ms; 0.3; Tj = 25 C - 1.6 5 A VR = 20 V; tp 3 ms; 0.3; Tj = 25 C - 3.5 12 A VR = 30 V; tp 3 ms; 0.3; Tj = 25 C - 12 45 A VR = 1 V; f = 1 MHz; Tj = 25 C - 86 - pF VR = 10 V; f = 1 MHz; Tj = 25 C - 32 - pF IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 3.2 - ns VF Tj = 25 C Tj = 25 C IF = 10 mA; tp 300 s; 0.02; Tj = 25 C IF = 100 mA; tp 300 s; 0.02; Tj = 25 C IF = 200 mA; tp 300 s; 0.02; Tj = 25 C IF = 500 mA; tp 300 s; 0.02; Tj = 25 C IF = 700 mA; tp 300 s; 0.02; Tj = 25 C IF = 1 A; tp 300 s; 0.02; Tj = 25 C IR Cd trr reverse current diode capacitance reverse recovery time Tj = 25 C PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 6 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-017992 10 IR (A) IF (A) 1 (1) 10-2 (1) 10-3 (2) 10-4 (2) 10-1 aaa-017993 10-1 (3) (4) (5) (3) 10-5 10-6 10-2 (4) 10-7 10-8 10-3 (5) 10-9 10-4 0.0 Fig. 4. 0.3 0.6 VF (V) 10-10 0.9 10 pulsed condition (1) Tj = 150 C pulsed condition (1) Tj = 150 C (2) Tj = 125 C (2) Tj = 125 C (3) Tj = 85 C (3) Tj = 85 C (4) Tj = 25 C (4) Tj = 25 C (5) Tj = -40 C (5) Tj = -40 C Forward current as a function of forward voltage; typical values aaa-017994 175 Cd (pF) 150 Fig. 5. 100 0.4 75 0.3 50 0.2 25 0.1 0 10 20 VR (V) 0.0 0.0 30 f = 1 MHz; Tamb = 25 C Tj = 150 C Diode capacitance as a function of reverse voltage; typical values (1) = 0.1 (2) = 0.2 (3) = 0.5 (4) = 1 Fig. 7. PMEG3010ESB Product data sheet 30 (4) (3) (2) (1) 0.5 1.0 IF(AV) (A) 1.5 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 1 July 2015 VR (V) aaa-017995 0.7 PF(AV) (W) 0.6 0.5 0 20 Reverse current as a function of reverse voltage; typical values 125 Fig. 6. 0 (c) NXP Semiconductors N.V. 2015. All rights reserved 7 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-017996 0.15 aaa-017997 1.5 PR(AV) (W) (1) IF(AV) (A) 0.10 (2) 1.0 (1) (2) (3) (3) 0.05 0.5 (4) (4) 0.00 0 10 20 VR (V) 0.0 30 Tj = 125 C Fig. 9. aaa-017998 1.5 100 125 150 175 Tamb (C) Average forward current as a function of ambient temperature; typical values aaa-017999 (1) IF(AV) (A) (2) (2) 1.0 (3) (3) 0.5 0.5 (4) 0.0 75 1.5 (1) 1.0 50 (1) = 1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Average reverse power dissipation as a function of reverse voltage; typical values IF(AV) (A) 25 FR4 PCB, standard footprint Tj = 150 C (1) = 1 (2) = 0.9 (3) = 0.8 (4) = 0.5 Fig. 8. 0 0 (4) 25 50 75 100 125 0.0 150 175 Tamb (C) FR4 PCB, mounting pad for anode and cathode 1 50 75 100 125 150 175 Tamb (C) Tj = 150 C cm each Tj = 150 C (1) = 1 (DC) (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz (1) = 1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values Product data sheet 25 Ceramic PCB, Al2O3, standard footprint 2 PMEG3010ESB 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 8 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-018000 1.5 (1) IF(AV) (A) (2) 1.0 (3) 0.5 (4) 0.0 0 25 50 75 100 125 150 175 Tsp (C) Tj = 150 C (1) = 1 (DC) (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition; step recovery P t2 duty cycle = t1 t2 t1 t 006aaa812 Fig. 14. Duty cycle definition PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 9 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM x with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM x with IRMS defined as RMS current. 12. Package outline 0.30 0.24 0.65 0.55 0.03 max 1 0.26 0.24 0.65 1.05 0.95 0.26 0.24 Dimensions in mm 2 0.51 0.49 14-10-24 Fig. 15. Package outline DSN1006-2 (SOD993) 13. Soldering SOD993 1.2 0.65 0.3 0.7 0.6 0.5 (2x) (2x) (2x) 0.8 0.2 0.25 (2x) occupied area solder resist 0.35 (2x) solder lands solder paste 0.45 (2x) Dimensions in mm 15-02-20 15-03-05 sod993_fr Fig. 16. Reflow soldering footprint for DSN1006-2 (SOD993) PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 10 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG3010ESB v.2 20150701 Product data sheet - PMEG3010ESB v.1 Modification: * PMEG3010ESB v.1 20150512 - - PMEG3010ESB Product data sheet Product status changed Preliminary data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation. PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 13 / 14 PMEG3010ESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 (c) NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 July 2015 PMEG3010ESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 July 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 14 / 14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: PMEG3010ESBYL