PMEG3010ESBYL - NXP Semiconductors

PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

1 July 2015 Product data sheet

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1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)

Surface-Mounted Device (SMD) package.

2. Features and benefits

•Average forward current: IF(AV) ≤ 1 A

•Reverse voltage: VR ≤ 30 V

•Low forward voltage, typical: VF = 495 mV

•Low reverse current, typical: IR = 12 µA

•Package height typ. 270 µm

3. Applications

•Low voltage rectification

•High efficiency DC-to-DC conversion

•Switch mode power supply

•Low power consumption applications

•Ultra high-speed switching

•LED backlight for mobile application

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IF(AV) average forward

current

δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C;

square wave

- - 1 A

VRreverse voltage Tj = 25 °C - - 30 V

VFforward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 495 565 mV

VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 1.6 5 µAIRreverse current

VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 12 45 µA

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 2 / 14

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode[1]

2 A anode

Transparent top view

DSN1006-2 (SOD993)

sym001

1 2

[1] The marking bar indicates the cathode.

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMEG3010ESB DSN1006-2 DSN1006-2, leadless ultra small package; 2 terminals; body 1.0

x 0.6 x 0.27 mm

SOD993

7. Marking

Table 4. Marking codes

Type number Marking code

PMEG3010ESB 3E

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 3 / 14

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage Tj = 25 °C - 30 V

IFforward current Tsp ≤ 135 °C; δ = 1 - 1.4 A

δ = 0.5; f = 20 kHz; Tamb ≤ 105 °C;

square wave

[1] - 1 AIF(AV) average forward current

δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C;

square wave

- 1 A

IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 4 A

IFSM non-repetitive peak forward

current

tp = 8 ms; Tj(init) = 25 °C; square wave - 10 A

[2] - 0.525 W

[3] - 1 W

Ptot total power dissipation Tamb ≤ 25 °C

[1] - 1.78 W

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode

1 cm2 each.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1][2] - - 240 K/W

[1][3] - - 125 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air

[1][4] - - 70 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

[5] - - 15 K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode

1 cm2 each.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5] Soldering point of anode tab.

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 4 / 14

aaa-016800

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle =

10.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02

0.01

FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-016801

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle =

10.75

0.5

0.25

0.33

0.2

0.1

0.05

0.02

0.01

FR4 PCB, mounting pad for anode and cathode 1 cm2 each

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 5 / 14

aaa-016802

tp (s)

10-3 102103

10110-2 10-1

102

Zth(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.25 0.2

0.1

0.05

0.02

0.01

Ceramic PCB, Al2O3, standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 6 / 14

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

V(BR)R reverse breakdown

voltage

IR = 1 mA; tp = 300 µs; δ = 0.02;

Tj = 25 °C

30 - - V

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 205 - mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 265 - mV

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 340 375 mV

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 370 - mV

IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 425 475 mV

IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 455 - mV

VFforward voltage

IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

- 495 565 mV

VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 0.9 - µA

VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 1.6 5 µA

VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 3.5 12 µA

IRreverse current

VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 12 45 µA

VR = 1 V; f = 1 MHz; Tj = 25 °C - 86 - pFCddiode capacitance

VR = 10 V; f = 1 MHz; Tj = 25 °C - 32 - pF

trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;

Tj = 25 °C

- 3.2 - ns

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 7 / 14

aaa-017992

VF (V)

0.0 0.90.60.3

10-2

10-3

10-1

(A)

10-4

(1)

(2)

(3) (4) (5)

pulsed condition

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = −40 °C

Fig. 4. Forward current as a function of forward

voltage; typical values

aaa-017993

10-1

10-2

10-3

10-4

10-5

10-6

10-7

10-8

10-9

(A)

10-10

VR (V)

0 302010

(1)

(2)

(3)

(4)

(5)

pulsed condition

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = −40 °C

Fig. 5. Reverse current as a function of reverse

voltage; typical values

VR (V)

0 302010

aaa-017994

175

(pF)

100

125

150

f = 1 MHz; Tamb = 25 °C

Fig. 6. Diode capacitance as a function of reverse

voltage; typical values

IF(AV) (A)

0.0 1.51.00.5

aaa-017995

0.7

PF(AV)

(W)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

(1)

(2)

(3)

(4)

Tj = 150 °C

(1) δ = 0.1

(2) δ = 0.2

(3) δ = 0.5

(4) δ = 1

Fig. 7. Average forward power dissipation as a

function of average forward current; typical

values

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 8 / 14

VR (V)

0 302010

aaa-017996

0.05

0.10

0.15

PR(AV)

(W)

0.00

(1)

(2)

(3)

(4)

Tj = 125 °C

(1) δ = 1

(2) δ = 0.9

(3) δ = 0.8

(4) δ = 0.5

Fig. 8. Average reverse power dissipation as a

function of reverse voltage; typical values

Tamb (°C)

0 50 100 150 1751257525

aaa-017997

0.5

1.0

1.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

FR4 PCB, standard footprint

Tj = 150 °C

(1) δ = 1; DC

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 9. Average forward current as a function of

ambient temperature; typical values

Tamb (°C)

0 50 100 150 1751257525

aaa-017998

0.5

1.0

1.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

FR4 PCB, mounting pad for anode and cathode 1

cm2 each

Tj = 150 °C

(1) δ = 1; DC

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 10. Average forward current as a function of

ambient temperature; typical values

Tamb (°C)

0 50 100 150 1751257525

aaa-017999

0.5

1.0

1.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Ceramic PCB, Al2O3, standard footprint

Tj = 150 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 11. Average forward current as a function of

ambient temperature; typical values

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 9 / 14

Tsp (°C)

0 50 100 150 1751257525

aaa-018000

0.5

1.0

1.5

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tj = 150 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 12. Average forward current as a function of solder point temperature; typical values

11. Test information

time

trr

IR(meas)

006aad022

Fig. 13. Reverse recovery definition; step recovery

006aaa812

duty cycle δ =

Fig. 14. Duty cycle definition

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 10 / 14

The current ratings for the typical waveforms are calculated according to the equations:

IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with

IRMS defined as RMS current.

12. Package outline

14-10-24Dimensions in mm

1.05

0.95

0.65

0.55

0.30

0.24 0.03

max

0.51

0.49

0.26

0.24

0.26

0.24

Fig. 15. Package outline DSN1006-2 (SOD993)

13. Soldering

SOD993

sod993_fr

occupied area

solder paste

solder resist

solder lands

Dimensions in mm

15-02-20

15-03-05

0.5

(2x)

0.6

(2x)

0.7

(2x)

1.2

0.3

0.25

(2x)

0.2

0.35

(2x)

0.45

(2x)

0.65

0.8

Fig. 16. Reflow soldering footprint for DSN1006-2 (SOD993)

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 11 / 14

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMEG3010ESB v.2 20150701 Product data sheet - PMEG3010ESB v.1

Modification: •Product status changed

PMEG3010ESB v.1 20150512 Preliminary data sheet - -

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 12 / 14

15. Legal information

15.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

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short data sheet, the full data sheet shall prevail.

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customer have explicitly agreed otherwise in writing. In no event however,

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is deemed to offer functions and qualities beyond those described in the

Product data sheet.

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Limited warranty and liability — Information in this document is believed

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Notwithstanding any damages that customer might incur for any reason

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

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Semiconductors accepts no liability for any assistance with applications or

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NXP Semiconductors does not accept any liability related to any default,

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Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 13 / 14

grant, conveyance or implication of any license under any copyrights, patents

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NXP Semiconductors accepts no liability for inclusion and/or use of non-

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In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without NXP Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

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15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,

HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,

MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PMEG3010ESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

Product data sheet 1 July 2015 14 / 14

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................3

10 Characteristics ....................................................... 6

11 Test information ..................................................... 9

12 Package outline ................................................... 10

13 Soldering .............................................................. 10

14 Revision history ...................................................11

15 Legal information .................................................12

15.1 Data sheet status ............................................... 12

15.2 Definitions ...........................................................12

15.3 Disclaimers .........................................................12

15.4 Trademarks ........................................................ 13

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 1 July 2015

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