FDP6030BL/FDB6030BL
FDP6030BL/FDB6030BL Rev.C
July 2000
2000 Fairchild Semiconductor International
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench
MOSFET
Features
• 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V
RDS(ON) = 0.024 Ω @ VGS = 4.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low RDS(ON).
• 175°C maximum junction temperature rating.
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter FDP6030BL FDB6030BL Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDMaximum Drain Current - Continuous (Note 1) 40
- Pulsed 120 A
Total Power Dissipation @ T C = 25°C60 W
PD
Derate above 25°C0.36 W/°C
TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C
Thermal Characteristics
RθJC Thermal R esistance, Junction-to-Case 2.5 °C/W
RθJA Thermal R esistance, Junction-to-Am bient 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDB6030BL FDB6030BL 13’’ 24mm 800
FDP6030BL FDP6030BL Tube N/A 45
S
D
G
S
GDTO-220
FDP Series
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
D
GSTO-263AB
FDB Seri es
FDP6030BL/FDB6030BL
FDP6030BL/FDB6030BL Rev.C
Electrical Characteristics TC = 25°C unless otherwise noted
S
y
mbol Parameter Test Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS Single Pulse Drain-Source
Avalanche Energy VDD = 15 V, ID = 40 A 150 mJ
IAR Maximum Drain-Source Avalnche Current 40 A
Off Characteristics
BVDSS Drain-Source Breakdown Volta
g
eVGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced t o 25°C23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
IGSSF Gate-Body Leakage Current,
Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate-Body Leakage Current,
Reverse VGS = -20 V, VDS = 0 V -100 nA
On Characteristics (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.6 3 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA, Referenced to 25°C-4.5 mV/°C
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 20 A,
VGS = 10 V, ID = 20 A, TJ = 125°C
VGS = 4.5 V,ID = 17 A
0.015
0.021
0.019
0.018
0.030
0.024
Ω
ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 40 A
gFS Forward Transconductance VDS = 5 V, ID = 20 A 30 S
Dynamic Characteristics
Ciss Input Capacit ance 1160 pF
Coss Output Capacit ance 250 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
100 pF
Switching Characteristics (Note 1)
td(on) Turn-On Delay Ti m e 9 17 ns
trTurn-On Rise Time 11 20 ns
td(off) Turn-Of f Delay Time 23 37 ns
tfTurn-Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
816ns
QgTotal Gate Charge 12 17 nC
Qgs Gate-Source Charge 3.2 nC
Qgd Gate-Drain Charge
VDS = 15 V,
ID = 20 A, VGS = 5 V
3.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current (Note 1) 40 A
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 20 A (Note 1) 0.95 1.2 V
Note:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDP6030BL/FDB6030BL
FDP6030BL/FDB6030BL Rev.C
Typical Characteristics
Figure 3. On-Resistance V ariation
with Temperature. Figure 4. On-Resistance V ariation
with Gate-to-Source V olt age.
Figure 5. T ransfer Characteristics. Figure 6. Body Diode Forward Volt age
V ariation with Source Current
and Temperature.
Figure 1. On-Region Characteristics. Figure 2. On-Resist ance V ariation
with Drain Current and Gate Voltage.
0
10
20
30
40
50
60
70
80
012345
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 10V
4.0V
5.0V
4.5V
6.0V
3.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 1020304050
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SO UR C E ON-R ESI STA N CE
V
GS
= 3.0V
10V
4.0V
3.5V
4.5V 5.0V
7.0V
0
0.01
0.02
0.03
0.04
0.05
0.06
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 10 A
T
A
= 125
o
C
T
A
= 25
o
C
0
10
20
30
40
50
12345
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
, BODY DIODE FOR WARD VOLTAG E ( V )
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 20A
V
GS
= 10V
V
GS
= 0V
FDP6030BL/FDB6030BL
FDP6030BL/FDB6030BL Rev.C
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 1 1. T ransient Thermal Response Curve.
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
1
10
100
1000
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θJC
= 2.5
o
C/W
T
C
= 25
o
C
DC
100ms
10ms 1ms
100
µ
s
10
µ
s
0.01 0.1 1 10 100 1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 2.5 °C/W
θJC
θJC
θJC
T - T = P * R (t)
θ
JC
C
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
0.01
0
2
4
6
8
10
0 5 10 15 20 25
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 20A V
DS
= 5V 10V
15V
0.01 0.1 1 10 100 1,000
0
500
1000
1500
2000
2500
SINGLE PULSE TIME (mSEC)
POWER (W)
SINGLE PULSE
R =2.5°C/W
T = 25°C
θJC C
TRADEMARKS
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
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Full Production
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