AO3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 specifications). AO3400L is a Green Product ordering option. AO3400 and AO3400L are electrically identical. VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) < 28m (VGS = 10V) RDS(ON) < 33m (VGS = 4.5V) RDS(ON) < 52m (VGS = 2.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25C Junction and Storage Temperature Range A Alpha & Omega Semiconductor, Ltd. W 1 TJ, TSTG t 10s Steady-State Steady-State A 30 C -55 to 150 Symbol A V 1.4 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead 12 4.9 ID IDM TA=25C A Units V 5.8 TA=70C Pulsed Drain Current B Power Dissipation Maximum 30 RJA RJL Typ 65 85 43 Max 90 125 60 Units C/W C/W C/W AO3400 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 5 Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A VGS=4.5V, ID=5A 27.3 33 m VGS=2.5V, ID=4A 43.3 52 m VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance 1.4 28 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg nA 39 Forward Transconductance Crss 100 32 VSD Output Capacitance 1.1 A 22.8 TJ=125C gFS Coss V TJ=55C VGS=10V, ID=5.8A IS Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ 10 15 0.71 823 m S 1 V 2.5 A 1030 pF VGS=0V, VDS=15V, f=1MHz 99 VGS=0V, VDS=0V, f=1MHz 1.2 3.6 9.7 12 nC pF 77 VGS=4.5V, VDS=15V, ID=5.8A 1.6 Qgd Gate Drain Charge 3.1 tD(on) Turn-On DelayTime 3.3 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.7, RGEN=3 pF nC nC 5 ns 4.8 7 ns 26.3 40 ns 4.1 6 ns trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/s 16 20 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s 8.9 12 ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 10V 3V VDS=5V 16 20 4.5V 2.5V 12 ID(A) ID (A) 15 8 10 125C VGS=2V 5 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 0 60 Normalized On-Resistance RDS(ON) (m) 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 3 1.8 50 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 1.6 VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 0.8 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 60 1.0E+00 ID=5A 1.0E-01 50 125C IS (A) RDS(ON) (m) 25C 4 40 30 125C 1.0E-02 1.0E-03 25C 1.0E-04 25C 20 1.0E-05 1.0E-06 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=5A 1200 Capacitance (pF) VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 Crss 200 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 TJ(Max)=150C TA=25C 30 100s Power (W) ID (Amps) 15 40 TJ(Max)=150C TA=25C 1ms 0.1s 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) 10.0 limited 5 10ms 1.0 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000