NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown V(BR)CES IC = 100A, VBE = 0 Voltage Collector-Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 100 - - V 100 - - V Emitter-Base Breakdown Voltage 12 - - V OFF Characteristics Collector Cutoff Voltage Emitter Cutoff Current V(BR)EBO IE = 10A, IC = 0 ICBO VCB = 80V, IE = 0 - - 100 nA ICES VCE = 80V, VBE = 0 - - 500 nA IEBO VBE = 10V, IC = 0 - - 100 nA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 10mA, VCE = 5V 10,000 - - IC = 100mA, VCE = 5V 10,000 - - IC = 10mA, IB = 0.01mA - 0.7 1.2 V IC = 100mA, IB = 0.1mA - 0.8 1.5 V IC = 100mA, VCE = 5V - 1.4 2.0 V 125 200 - MHz - 5.0 8.0 pF ON Characteristics (Note 1) DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter ON Voltage VCE(sat) VBE(on) Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance fT Cobo IC = 10mA, VCE = 5V, f = 100MHz, Note 2 VCB = 10V, IE = 0, f = 100kHz Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2% Note 2. fT = hfe ftest .135 (3.45) Min .210 (5.33) Max Seating Plane C B E .500 (12.7) Min .021 (.445) Dia Max E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max