NTE46
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
Preamp, Driver
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCES 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, RΘJC 83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, RΘJA 200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown
Voltage V(BR)CES IC = 100µA, VBE = 0 100 – – V
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 100 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 12 – – V
Collector Cutoff Voltage ICBO VCB = 80V, IE = 0 – – 100 nA
ICES VCE = 80V, VBE = 0 – – 500 nA
Emitter Cutoff Current IEBO VBE = 10V, IC = 0 – – 100 nA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 10mA, VCE = 5V 10,000 – –
IC = 100mA, VCE = 5V 10,000 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.01mA –0.7 1.2 V
IC = 100mA, IB = 0.1mA –0.8 1.5 V
Base–Emitter ON Voltage VBE(on) IC = 100mA, VCE = 5V –1.4 2.0 V
Small–Signal Characteristics
Current Gain–Bandwidth Product fTIC = 10mA, VCE = 5V,
f = 100MHz, Note 2 125 200 –MHz
Output Capacitance Cobo VCB = 10V, IE = 0, f = 100kHz –5.0 8.0 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Note 2. fT = hfe ftest
B
C
E
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
