SEMIKRON INC ObE D Bj) onsub71 OUOLLIY 1 i - O1r~ 21 T~ 25-23 SEMIPACK Fast Thyristor/Diode SEMIPACK Schnelle Thyristor/Dioden- SEMIPACK Modules a thyristors/diodes Modules Module rapides isolated metal bases. Vj,,) = 2500 V~ Types Vorm | Vrrm Irams hay?) hsm Ht (4) Vr.Ve | Vico tr tr ty Ver ler All data apply to one lens Tray?) lesa dt Jor | max. 25C 125C min, min. single valve device (Tease) | 25C | 25C (rte) | = Veo (tp = 100 1s) (thyristor or diode) toms ; 10ms Vv Vv A A A As V/us Vv Vv mQ ps us Vv mA SKFA 18/06CP 600 10 36 17 350 610} 200 2,5 1,4 12 0,3 5 3 200 /08CP 800 (80C) . (70A) MocPe 1000 50Hz AICP 1100 Hi2CP 1200 SKFH 20/08DS 800 800 45 20 550 1500; 500 2,5 1,7 5,5 1 15 3 200 /i0DS;DT | 1000 1000 (85C) (150A) 15; 20 12DT;DU | 1200 1200 125C 20;25 SKFH 30/08DT 800 800 75 30 1000 5000} 500 2,25 1,6 4 1 20 3 200 ODT 1000 1000 (89C) (150A) M2DT 1200 1200 125C SKFH 40/08DS;DU 800 800 110 40 1300 8400 | 500 2,3 18 2 2 15; 25 3 200 AM0DT;DU | 1000 1000 (87C) (200A) 20; 25 42DT;DU | 1200 1200 125C 20; 25 SKFH 60/08DS 800 800 130 60 1500 11250 | 500 4,75 1,5 1,5 2 15 3 200 AAODT 1000 1000 (81C) (200 A) 20 M2DT;DU | 1200 1200 125C 20; 25 SKFH 110/04DS,DT 400 400 250 110 4500 | 101000; 500 1,85 1,45 1 2 15;20 4 250 /08 DS; DT 800 800 (85C) (400 A) 15; 20 AM0DS;DT ;} 1000 1000 125C 16; 20 A2DU 1200 1200 25 SKFH 150/06DS 600 600 385 150 6500 | 210000] 500 2,05 14 0,5 - 15 5 250 /08DS 800 800 (85C) (1200 A) /09DS 900 900 /10DS 1000 1000 SKAH 180/12DS 1200 15 385 180 8000 | 265000; 500 2,2 1,4 0,4 ~ 15 5 250 M4DS 1400 (80C) | (8,3 ms) (1200 A) SKFT 20/06DS;DT 600 600 45 20 550 1500 500 2,5 1,7 5,5 - 15; 20 3 200 /08 DS; DT 800 800 (85C) (150A) fi0DS;DT | 1000 1000 125C /42DT;DU | 1200 1200 SKFT 30/06DS;DT 600 600 75 30 1000 5000 | 500 2,25 1,6 4 - 15; 20 3 200 /08DS;DT 800 800 (89C) (150A) 15;20 AMODS;DT | 1000 1000 125C 15; 20 #12DT;DV {| 1200 1200 20; 30 SKFT 40/08DS;DU 800 800 110 40 1300 8400 | 500 2,3 1,8 2 - 15; 20 3 200 AIO0DT;DU | 1000 1000 (87C) (200 A) 20; 25 AI2DT;DU | 1200 1200 125C 20; 25 SKFT 60/08DS;DT $00 800 130 60 1500 11250 500 1,75 1,5 1,5 - 18; 20 3 200 /10DT 1000 1000 (81C) (200 A) 20 A2DT;DU | 71200 1200 125C 20; 25 M4DuU 1400 1400 25 SKFT 110/04DS;DT 400 400 250 110 4500 | 101000 500 1,85 1,45 1 - 15; 20 4 250 /08 DS; DT 800 800 (85C) (400 A) 15; 20 AI0DS;DT | 1000 1000 125C 15; 20 A2DU 1200 1200 25 14DU 1400 1400 25 SKKD 40F04 - 400 110 40 1100 6000 - 2,0 12 4 0,2 - - - Fo6 ~ 600 (80C) (150 A) . Fos - 800 F10 - 1000 SKKD 40M08 = goo | 110 40 soo | 3200] - 1,85 | 7,0 5 1 = = - M12 - 1200 (83C) (150 A) M14 - 1400 - M15 - 1500 SKKD) 60E01 - too | 110 50 g00 | 3200] - 16 0,8 65 | 0,06 - = = E03 - 300 (81,5C) (120A) : E04 - 400 SKKD 160M08 = goo | 300 | 160 | 7000 |245000/ - 15 125 | 065 | 2 - = - M10 - 1000 (86C) (400 A) M12 - 1200 M14 - 1400 M15 - 1500 SKLD 20F04 - 400 40 15,2 450 1000 - 2,15 1,3 12 0,2 - - - FO06 - 600 (85C) (60 A) Fos - 800 F10 - 1000 1) Second code letter appendixed to the type number: 2) f = 500 Hz P: tq = 7 ps (gate-assisted turn-off. Vg = 10 V) S: ty = 15 ps -T: tg = 20 ps U: ty = 25 ps -V: ty = 30 us 3) Internal insulation: beryllium oxide 4) Epitaxial diodes 5) Asymmetric thyristors 20SEMIKRON INC ObE D &13b671 QO0L195 3 SEMIKRUN innovation + Service 7-O/-2/ SEMIPACK SEMIPACK SEMIPACK T2523 Moduli a tiristori/diodi Modulos detiristores/diodos Mdulosdetiristores/diodos veloci rapidos rapidos ait. [eit | Paes | Case | lout CaseA5 SEMIPACK1 CaseAt1 TO-240AA ae pe c__| ecw _| CW | Page 4A | 125 | 1,7 | 0,2 A18 K ime ii arvana 21 cS 4 ' SKMD 40F 125 | 1,00 | 020 | As [2 24 Case A18 125 0,60 0,20 A8& 21 725 | 0,407 | 0,20 | AB 21 M,=5Nm+ 15% UL approved c= Q 396-1 03531 000 AS Mo=3Nm + 15% No. 63532 SKFT 20...60 w=120g SKFA 18 21 125 | 0,209) 0,06 | A14 CaseA8 CaseA19 21 th 125 | 0,159] 0,06 | As2 21 ; we Togs | 008 | Age SKFH 20...60 SKND50E 21 125 | 1,00 | 020 | AS CaseA10 CaseA20 21 sa 425 0,60 0,20 A5 ' x | 21 SKKD40F SKKD40M SKKD50E 425 0,409) | 0,20 A5 a1 Case A13 SEMIPACK3 Case A 14 125 0,359 | 0,20 A5 ' ae Ap 21 Los 425 0,209 | 0,06 A13 t & | lin t fe SKFH 110 21 - 125 0,70 0,20 Ai0 CaseA16 241 125 0,70 0,20 A10 21 150 0,85 0,20 A20 SKKD 160M 21 430 | 0,199 0,06 | Ai6 Case A32 a 21 4 i 5 : | eave) 125 | 15 0,30 E23 M,=5Nm + 15% UL approved t +H Mo=9Nm+ 15% No. 63532 | gx ai4go 23 SKFT 110 w=620g SKFH 150 Dimensions in mm - M, = Case to heatsink - Mz = Busbars to terminals - 1 Nm = 0,1 mkp ~ 9 Ib. in.