©2001 Fairchild Semiconductor Corporation
February 2001
Rev. A, February 2001
IRF634B
IRF634B
250V N-Ch annel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
8.1A, 250V, RDS(on) = 0.45 @VGS = 10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maxim um Ratings TC = 25°C unless otherwise noted
Thermal Char acteristics
Symbol Parameter IRF634B Units
VDSS Drain-Source Voltage 250 V
IDDrain Current - Continuous (TC = 25°C) 8.1 A
- Continuous (TC = 100°C) 5.1 A
IDM Drain Current - Pulsed (Note 1) 32.4 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ
IAR Avalanche Current (Note 1) 8.1 A
EAR Repetitive Avalanche Energy (Note 1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns
PDPower Dissipation (TC = 25°C) 74 W
- Derate above 25°C 0.59 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 1.69 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
!"
!
!
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!"
!
!
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"
S
D
G
TO-220
IRF Series
GS
D
Rev. A, February 2001
IRF634B
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2001 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.9mH, IAS = 8.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8.1A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA250 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.27 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA
VDS = 200 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 4.05 A -- 0.345 0.45
gFS Forward Transconductance VDS = 40 V, ID = 4.05 A -- 7.6 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 780 1000 pF
Coss Output Capacitance -- 95 125 pF
Crss Reverse Transfer Capacitance -- 20 25 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125 V, ID = 8.1 A,
RG = 25
-- 15 40 ns
trTurn-On Rise Time -- 75 160 ns
td(off) Turn-Off De l a y Time -- 10 0 210 n s
tfTurn -Off Fa ll Time -- 65 140 n s
QgTotal Gate Ch arge VDS = 200 V, ID = 8.1 A,
VGS = 10 V
-- 29 38 nC
Qgs Gate-Source Charge -- 4.2 -- nC
Qgd Gate-Drain Charge -- 14 -- nC
Drain-Source Di ode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8.1 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.4 A
VSD Drain-Source Diode Forward V oltage VGS = 0 V, IS = 8.1 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 8.1 A,
dIF / dt = 100 A/µs
-- 170 -- ns
Qrr Reverse Recovery Charge -- 0.91 -- µC
Rev. A, February 2001©2001 Fairchild Semiconductor Corporation
IRF634B
0 5 10 15 20 25 30
0
2
4
6
8
10
12
VDS = 125 V
VDS = 50V
VDS = 200 V
! N o te : I D = 8.1 A
VGS, Gate-Source Voltage [V]
QG, To ta l Ga te Ch a rg e [n C ]
10-1 100101
0
500
1000
1500
2000
Coss
Ciss = C gs + Cgd (C ds = shorted)
Coss = Cds + Cgd
Crss = C gd
! N ote s :
1. VGS = 0 V
2. f = 1 MHz
Crss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10-1
100
101
150"
! Note s :
1. VGS = 0V
2. 25 0 #s Pulse Test
25"
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 6 12 18 24 30
0.0
0.5
1.0
1.5
2.0
2.5
VGS = 20V
VGS = 10V
! No te : TJ = 25"
RDS(ON) [$],
Drain-Source On-Resistance
ID, Drain Current [A]
246810
10-1
100
101
150oC
25oC
-55oC
! N ote s :
1. VDS = 40V
2. 25 0 #s P ulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
10-1 100101
10-1
100
101
V GS
Top : 1 5 .0 V
1 0 .0 V
8 .0 V
7 .0 V
6 .5 V
6 .0 V
5 .5 V
Botto m : 5.0 V
! N ote s :
1. 25 0 #s Pu lse Test
2. TC = 25"
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitanc e C haracteristics Figure 6. Gate Charge C haracter is tics
Figure 3. On-Resistanc e Variation vs
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteristics
©2001 Fairchild Semiconductor Corporation Rev. A, February 2001
IRF634B
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
! Notes :
1 . Z%JC(t) = 1.6 9 "/W Ma x .
2 . Du ty F a c tor, D = t1/t2
3 . TJM - T C = PDM * Z%JC(t)
s in g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
Z%JC
(t), T he r mal Re s p o n s e
t1, S quare W ave Pulse D uration [sec]
25 50 75 100 125 150
0
2
4
6
8
10
ID, Drain Current [A]
TC, Case Temperature ["
]
100101102
10-1
100
101
102
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
! Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Sin g le P u ls e
ID, Drain C u rr en t [A]
VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
! N o te s :
1 . V GS = 10 V
2 . ID = 4.05 A
RDS(ON) , (Norm alized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
!
N o te s :
1 . V GS = 0 V
2 . ID = 250 #A
BV DSS , (Nor ma liz e d )
Drain-Source Breakdown Voltage
TJ, Junction Tem pe rature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
Figu re 7. Breakdown Voltage Variati on
vs Temperature Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Respons e Cur ve
t1
PDM
t2
Rev. A, February 2001©2001 Fairchild Semiconductor Corporation
IRF634B
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2001 Fairchild Semiconductor Corporation Rev. A, February 2001
IRF634B
Peak Diode Recover y dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD con troll ed by pulse per iod
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD con troll ed by pulse per iod
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
Rev. A, February 2001©2001 Fairchild Semiconductor Corporation
IRF634B
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
©2001 Fairchild Semiconductor Corporation
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intended to be an exhaustive list of all such trademarks.
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This dat asheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
SyncFET™
TinyLogic™
VCX™
UHC™