RECTRON USA 1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
LS4148
RECTRON
1N4148 Quadro MELF S IGNAL DIODE
Absolute Maxim um Ratings (Ta=25°C)
Items S
y
mbol Ratings Unit
Reverse Voltage VR 75 V
Reverse Recovery
Time trr 4 ns
Power Dissipation
3.33mW/°C
(
25°C
)
P 500 mW
Forward Current IF 150 mA
Junction Temp. Tj -65 to 175 °C
Storage Temp. Tstg -65 to 175 °C
Mechanical Data
Items Materials
Package QUADRO MELF
Case Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip Glass Passivated
Electrical Characteristics (Ta=25°C)
Ratings Symbol Ratings Unit
Minimum Breakdown Voltage
@IR= 100uA BV 100 V
Peak Forward Surge Current
tp= 1µsec. IFsurge 2 A
Maximum Forward Voltage
IF= 10mA VF 1.0 V
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
IR 0.025
5.0
50
uA
Maximum Junction Capacitance
VR= 0, f= 1 MHz Cj 4 pF
Maximum Reverse Recovery Time
IF= 10mA, VR = 6V, IR R= 1m A, RL= 100 Ωtrr 4 ns
Maximum Therm al Resistance (on P C B oard 50m m x 50mm x 1.6m m) RθJA 500 °C/W
Maximum Rectification Efficiency
Vrf= 2V, f= 100M Hz ην 0.45 %
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FLEM
Dimensions in millimeters
1.7
3.5 +/- 0.2
1.5 +/-0.1
Glass
Glass
Cathode Identification
