2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Compliant Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors feature low saturation voltage. The UA package is hermetically sealed and provides a low profile for minimizing board height. These devices are also available in U4, TO-5 and TO-39 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N3439UA through 2N3440UA series. * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368. * RoHS compliant by design. * V CE(sat) = 0.5 V @ I C = 50 mA. * Turn-On time t on = 1.0 s max @ I C = 20 mA, I B1 = 2.0 mA. * Turn-Off time t off = 10 s max @ I C = 20 mA, I B1 = -I B2 = 2.0 mA. UA Package Also available in: U4 package (surface mount) 2N3439U4 - 2N3440U4 APPLICATIONS / BENEFITS * General purpose transistors for medium power applications requiring high frequency switching and low package profile. * Military and other high-reliability applications. TO-5 package (long leaded) 2N3439L - 2N3440L TO-39 package (leaded) 2N3439 - 2N3440 MAXIMUM RATINGS (T C = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N3439UA 2N3440UA Unit V CEO 350 250 V Collector-Base Voltage V CBO 450 Emitter-Base Voltage V EBO 7.0 V IC 1.0 0.8 5.0 2.0 -65 to +200 A Collector-Emitter Voltage Collector Current Total Power Dissipation (1) @ TA = +25 C (2) @ TC = +25 C o (3) UA @ TSP = +25 C Operating & Storage Junction Temperature Range PD TJ , Tstg 300 Notes: 1. Derate linearly @ 4.57 mW/C for TA > +25 C. 2. Derate linearly @ 28.5 mW/C for TC > +25 C. 3. Derate linearly @ 14 mW/C for TSP > +25 C. V W C MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com LDS-0022-3, Rev. 1 (111683) (c)2011 Microsemi Corporation Page 1 of 6 2N3439UA thru 2N3440UA MECHANICAL and PACKAGING * * * * * * * CASE: Hermetically sealed ceramic package. TERMINALS: Gold plate over nickel. MARKING: Manufacturer's ID, date code, part number. POLARITY: NPN (see package outline). TAPE & REEL option: Per EIA-481. Consult factory for quantities. WEIGHT: 0.12 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3439 UA Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial Surface Mount Package type JEDEC type number (see Electrical Characteristics table) Symbol C ibo C obo I CEO I CEX I EBO h FE V BE V CE V CEO V CBO V EB V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit input capacitance. Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Base-emitter voltage, dc . Collector-emitter voltage, dc. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, dc . Emitter-base voltage, collector open. LDS-0022-3, Rev. 1 (111683) (c)2011 Microsemi Corporation Page 2 of 6 2N3439UA thru 2N3440UA ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise noted) OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage I C = 10 mA R BB1 = 470 ; V BB1 = 6 V L = 25 mH (min); f = 30 - 60 Hz Collector-Emitter Cutoff Current V CE = 300 V V CE = 200 V Emitter-Base Cutoff Current V EB = 7.0 V Collector-Emitter Cutoff Current V CE = 450 V, V BE = -1.5 V V CE = 300 V, V BE = -1.5 V Collector-Base Cutoff Current V CB = 360 V V CB = 250 V V CB = 450 V V CB = 300 V Symbol Min. 2N3439UA 2N3440UA V (BR)CEO 350 250 2N3439UA 2N3440UA I CEO 2.0 2.0 A I EBO 10 A I CEX 5.0 5.0 A 2N3439UA 2N3440UA 2N3439UA 2N3440UA 2N3439UA 2N3440UA Max. V 2.0 2.0 5.0 5.0 I CBO Unit A ON CHARACTERISTICS (1) Parameters / Test Conditions Forward-Current Transfer Ratio I C = 20 mA, V CE = 10 V I C = 2.0 mA, V CE = 10 V I C = 0.2 mA, V CE = 10 V Collector-Emitter Saturation Voltage I C = 50 mA, I B = 4.0 mA Base-Emitter Saturation Voltage I C = 50 mA, I B = 4.0 mA Symbol h FE Min. Max. 40 30 10 160 Unit V CE(sat) 0.5 V V BE(sat) 1.3 V Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 10 mA, V CE = 10 V, f = 5.0 MHz |h fe | 3.0 15 Forward Current Transfer Ratio I C = 5.0 mA, V CE = 10 V, f = 1.0 kHz h fe 25 Output Capacitance V CB = 10 V, I E = 0, 100 kHz f 1.0 MHz C obo 10 pF Input Capacitance V CB = 5.0 V, I E = 0, 100 kHz f 1.0 MHz C ibo 75 pF (1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%. LDS-0022-3, Rev. 1 (111683) (c)2011 Microsemi Corporation Page 3 of 6 2N3439UA thru 2N3440UA ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise noted) continued SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time V CC = 200 V; I C = 20 mA, I B1 = 2.0 mA t on 1.0 s Turn-Off Time V CC = 200 V; I C = 20 mA, I B1 = -I B2 = 2.0 mA t off 10 s IC - Collector Current (mA) SAFE OPERATING AREA (See graph below and also reference test method 3053 of MIL-STD-750.) DC Tests T C = +25 C, 1 Cycle, t = 1.0 s Test 1 V CE = 5.0 V, I C = 1.0 A Both Types Test 2 V CE = 350 V, I C = 14 mA 2N3439UA Test 3 V CE = 250 V, I C = 20 mA 2N3440UA V CE - Collector to Emitter Voltage (V) Maximum Safe Operating graph (continuous dc) LDS-0022-3, Rev. 1 (111683) (c)2011 Microsemi Corporation Page 4 of 6 2N3439UA thru 2N3440UA DC Operation Maximum Rating (W) GRAPHS o TSP ( C) (Solder Pad) FIGURE 1 Temperature-Power Derating Curve THETA (oC/W) NOTES: Thermal Resistance Junction to Solder Pad = 70.0 oC/W Max Finish-Alloy Temp = 175.0 oC .110-5 .110-4 .110-3 .110-2 .110-1 TIME (s) 0.1 1 10 100 FIGURE 2 Maximum Thermal Impedance NOTE: T C = +25 C, Thermal Resistance R JSP = 70.0 C/W, Pdiss = 2 W. LDS-0022-3, Rev. 1 (111683) (c)2011 Microsemi Corporation Page 5 of 6 2N3439UA thru 2N3440UA PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension "CH" controls the overall package thickness. When a window lid is used, dimension "CH" must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the drawing. 5. Dimensions " LW2" minimum and "L3" minimum and the appropriate castellation length define an unobstructed threedimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension " LW2" maximum and "L3" maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. The co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. LDS-0022-3, Rev. 1 (111683) Symbol BL BL2 BW BW2 CH L3 LH LL1 LL2 LS LW LW2 (c)2011 Microsemi Corporation Dimensions Inches Millimeters Min Max Min Max 0.215 0.225 5.46 5.71 0.225 5.71 0.145 0.155 3.68 3.93 0.155 3.93 0.061 0.075 1.55 1.90 0.003 0.007 0.08 0.18 0.029 0.042 0.74 1.07 0.032 0.048 0.81 1.22 0.072 0.088 1.83 2.23 0.045 0.055 1.14 1.39 0.022 0.028 0.56 0.71 0.006 0.022 0.15 0.56 Pin no. Transistor 1 Collector 2 Emitter 3 Base Note 3 5 5 4 N/C Page 6 of 6