JAN2N3439UA - Microsemi Corp. - Datasheet.Directory

2N3439 UA thru 2N 3440UA

Compliant

NPN LOW POWER SI L ICON

TRANSISTOR

Qualified per MIL-PRF-19500/368

Qualified Levels:

JAN, J AN TX,

JANTXV and JAN S

DESCRIPTION

This family of 2N 34 39UA thr oug h 2N 3 44 0U A high-frequen cy, epitaxial pl anar transistor s

fe ature low sat ur ati on voltage. The UA package i s hermetically sealed and provides a low

profile f or mini mizing boar d height . Th ese devic es are al so available i n U 4, TO-5 and TO-39

packaging. M icr osemi als o offers numer ous other transistor produc ts t o m eet hi gher and

lower power ratings with various switching speed requirements in both through-hol e and

surface-mount pac kages.

UA Package

Also available in:

U4 package

(surface mount)

2N3439U4 – 2N3440U4

TO-5 package

(long leaded)

2N3439L – 2N3440L

TO-39 packa ge

(leaded)

2N3439 – 2N3440

Important: For the lates t information, visi t our website http://www.microsemi.com.

FEATURES

• JEDEC registered 2N3439UA through 2N3440UA series.

• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368.

• RoHS compliant by desi gn.

• VCE(sat) = 0.5 V @ IC = 50 mA.

• Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.

• Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.

APPLICAT IONS / BENEFITS

• General purpose transis tors for medium power applications requiring high frequenc y switching and

low package profil e.

• Military and other high-reliability applications.

MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: + 353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters / Test Conditions Symbol 2N3439UA 2N3440UA Unit

Collector-Em itter Voltage VCEO 350 250 V

Collector-Base Voltage

CBO

450

300

Emitter-Base Voltage VEBO 7.0 V

Collector Current

1.0

Total Power Dissipation

@ T

= +25 °C (1)

@ T C = +25 °C (2)

@ TSP = +25 oC (3) PD

0.8

5.0

2.0 W

Operating & Storage J unction Temperature Range TJ, Tstg -65 to +200 °C

Notes: 1. Derate linearly @ 4.57 mW/°C for TA > +25 °C.

2. Derate linearly @ 28.5 mW/°C for TC > +25 °C.

3. Derate linearly @ 14 mW/°C for TSP > +25 °C.

2N3439 UA thru 2N 3440UA

M ECHANICAL and PACKAGING

• CASE: Hermetically sealed ceramic package.

• TERMINALS: Gold plate over nickel.

• MARKING: Manufacturer's ID, date code, part number.

• POLARITY: NPN (see pac kage outline).

• TAPE & REEL option: Per EIA-481. Consult factory for quantities.

• WEIGHT: 0.12 grams.

• See Package Dimensions on last page.

PART NOMENCLAT URE

JAN 2N3439 UA

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

JANS = JANS Level

Blank = Commercial

JEDEC type number

(see Electrical Characteristics

table)

Surface Mount Package type

SYMBOLS & DEFI NITIONS

Symbol

Definition

Cibo

Common-base open-circ uit input capac it ance.

Cobo

Common-base open-circ uit output capacit ance.

ICEO

Collect or c utoff cur r ent, base open.

ICEX

Collect or c utoff cur r ent, c irc uit bet ween base and emit ter.

IEBO

Emitter cutoff current , c ollect or open.

hFE

Common-emitter st ati c forward curr ent transfer ratio.

VBE

Base-emi tter voltage, dc .

VCE

Collector-emitter voltage, dc .

VCEO

Collector-emitter voltage, bas e open .

VCBO

Collector-emitter voltage, emi tter open.

VEB

Emitter-base vo lt age, dc .

VEBO

Emitter-base vo lt age, coll ector open.

2N3439 UA thru 2N 3440UA

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

OFF CHARACTERISTICS

Paramete r s / Test Conditions

Symbol

Min.

Max.

Unit

Collector-Emi tter Br eakdown Vol tage

V(BR)CEO

350

250

= 10 mA

RBB1 = 470 Ω; VBB1 = 6 V

L = 25 mH (min); f = 30 – 60 Hz

2N3439UA

2N3440UA

Collector-E mitter Cutoff Current

ICEO

2.0

2.0 µA

= 300 V

VCE = 200 V

2N3439UA

2N3440UA

Emitter-B ase Cutoff Cur r ent

VEB = 7.0 V

IEBO 10 µA

Collector-Emi tter C ut off Curr ent

ICEX

5.0

µA

= 450 V, V

= -1.5 V

VCE = 300 V, VBE = -1.5 V

2N3439UA

2N3440UA

Collector-Bas e Cutof f Current

ICBO

2.0

5.0

µA

= 360 V

VCB = 250 V

VCB = 450 V

VCB = 300 V

2N3439UA

2N3440UA

2N3439UA

2N3440UA

ON CHARACTERISTI CS (1)

Paramete r s / Test Conditions Symbol Min. Max. Unit

Forward-Cur rent Transfer R atio

IC = 20 mA, VCE = 10 V

IC = 2.0 m A, VCE = 10 V

= 0.2 m A, V

= 10 V hFE

160

Collector-Emitter Saturation Voltage

IC = 50 mA, IB = 4. 0 mA VCE(sat) 0.5 V

Base-Emi tter Saturati on Vol tage

IC = 50 mA, IB = 4. 0 mA VBE(sat) 1.3 V

DYNAMIC CHARACTERISTICS

Paramete r s / Test Conditions Symbol Min. Max. Unit

Magnitude of C ommon Emitter Small-Signa l Short-

Circuit Forward Cu rrent Trans fe r Ratio

IC = 10 mA, VCE = 10 V, f = 5.0 MHz |hfe| 3.0 15

Forward C ur r ent Trans fer Ratio

= 5.0 mA, V

= 10 V, f = 1 .0 kHz hfe 25

O utput Capaci tance

= 10 V, I

= 0, 10 0 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF

I nput C apacitance

VCB = 5.0 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF

(1) Pulse Test: Pu lse Width = 300 µs, duty cycle ≤ 2.0%.

2N3439 UA thru 2N 3440UA

ELECTRICAL CHARACTERISTICS (TA = + 25°C, unless otherwise not ed) continued

SWIT CHING CHARACTERISTICS

Paramete r s / Test Conditions Symbol Min. Max. Unit

Turn-On Time

VCC = 200 V; IC = 20 mA, IB1 = 2.0 mA ton

1.0 µs

Turn-O ff Tim e

VCC = 200 V; IC = 20 mA, IB1 = -IB2 = 2.0 mA toff

10 µs

SAFE OPERATING AREA (See graph bel ow and also reference test meth od 3053 of

MIL-STD-750.)

DC Te sts

TC = +2 5 °C, 1 Cycle, t = 1.0 s

Test 1

VCE = 5.0 V, IC = 1.0 A

B oth Types

Test 2

VCE = 350 V, IC = 14 mA

2N3439UA

Test 3

VCE = 250 V, IC = 20 mA

2N3440UA

VCE – Col lector to Emitt er Vol tage ( V)

Max i mum Safe Operating gr aph (c onti nuous dc)

– Collector Current (mA)

2N3439 UA thru 2N 3440UA

GRAPHS

TSP (oC) (Sol de r Pad)

FIGURE 1

Temperature-Power Derating Curve

NOTES: Thermal Resistan ce Junction to Solder Pad = 70.0 oC/W

Ma x F inish -Alloy Temp = 175.0 oC

.110-5 .110-4 .110-3 .110-2 .110-1 0.1 1 10 100

TIME (s)

FIGURE 2

Maximum Ther mal Impedan ce

NOTE: TC = +25 °C, Thermal Resistance RθJSP = 70.0 °C/W, Pdiss = 2 W.

DC Operation Maximum Rating (W)

THETA (oC/W)

2N3439 UA thru 2N 3440UA

PACKAGE DIM ENSIONS

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimension "CH" controls the overall package thickness. When a

window lid is used, dimension "CH" must increase by a minimum

of .010 inch (0.254 mm) and a m aximum of .040 inch (1.020

mm).

4. The corner shape (square, notch, radius, etc.) may vary at the

manufacturer's option, from that shown on the drawing.

5. Di mensions " LW2" mini mu m and "L3" minimu m and the

appropriate castellation length define an unobstructed three-

dimensional space traversing all of the ceramic l ayers in which a

castellation was designed. (Castellations are required on bottom

two l ayers, optional on top ceramic layer.) Dimension " LW2"

maximum and "L3" maximum define the maximum width and

depth of the c astellation at any point on its surface.

Measurement of these dimensions may be made prior to solder

dipping.

6. The co-planarity deviation of all term inal contact points, as

defined by the device seating plane, shall not exceed .006 inch

(0.15mm) for solder dipped leadless chip carriers.

7. I n accordance wit h ASME Y14.5M, diameters are equivalent to

Φx symbology.

Dimensions

Symbol

Inches

Millimeters

Note

Min

Max

Min

Max

0.215

0.225

5.46

5.71

BL2

0.225

5.71

0.145

0.155

3.68

3.93

BW2

0.155

3.93

0.061

0.075

1.55

1.90

0.003

0.007

0.08

0.18

0.029

0.042

0.74

1.07

LL1

0.032

0.048

0.81

1.22

LL2

0.072

0.088

1.83

2.23

0.045

0.055

1.14

1.39

0.022

0.028

0.56

0.71

LW2

0.006

0.022

0.15

0.56

Pin no.

Transistor

Collector

Emitter

Base

N/C